TWI359511B - Light-emitting diode arrangement and method of man - Google Patents

Light-emitting diode arrangement and method of man Download PDF

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Publication number
TWI359511B
TWI359511B TW096135028A TW96135028A TWI359511B TW I359511 B TWI359511 B TW I359511B TW 096135028 A TW096135028 A TW 096135028A TW 96135028 A TW96135028 A TW 96135028A TW I359511 B TWI359511 B TW I359511B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
layer
carrier
emitting diode
light
Prior art date
Application number
TW096135028A
Other languages
English (en)
Chinese (zh)
Other versions
TW200816530A (en
Inventor
Stefan Gruber
Berthold Hahn
Siegfried Herrmann
Joerg Erich Sorg
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200816530A publication Critical patent/TW200816530A/zh
Application granted granted Critical
Publication of TWI359511B publication Critical patent/TWI359511B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07131—Means for applying material, e.g. for deposition or forming coatings

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW096135028A 2006-09-27 2007-09-20 Light-emitting diode arrangement and method of man TWI359511B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006045691 2006-09-27
DE102007021009A DE102007021009A1 (de) 2006-09-27 2007-05-04 Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen

Publications (2)

Publication Number Publication Date
TW200816530A TW200816530A (en) 2008-04-01
TWI359511B true TWI359511B (en) 2012-03-01

Family

ID=39154780

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135028A TWI359511B (en) 2006-09-27 2007-09-20 Light-emitting diode arrangement and method of man

Country Status (8)

Country Link
US (2) US8154040B2 (https=)
EP (1) EP2057681B1 (https=)
JP (1) JP2010505252A (https=)
KR (1) KR101326636B1 (https=)
CN (1) CN101523598B (https=)
DE (1) DE102007021009A1 (https=)
TW (1) TWI359511B (https=)
WO (1) WO2008040315A2 (https=)

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US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
DE102009036621B4 (de) * 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
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DE102009042205A1 (de) * 2009-09-18 2011-03-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul
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KR101142965B1 (ko) 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
DE102010050832A1 (de) * 2010-11-09 2012-05-10 Osram Opto Semiconductors Gmbh Lumineszenzkonversionselement, Verfahren zu dessen Herstellung und optoelektronisches Bauteil mit Lumineszenzkonversionselement
KR101189081B1 (ko) * 2010-12-16 2012-10-10 엘지이노텍 주식회사 웨이퍼 기판 접합 구조, 이를 포함하는 발광 소자 및 그 제조 방법
DE102011013369A1 (de) * 2010-12-30 2012-07-05 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterbauelementen
DE102011016308A1 (de) 2011-04-07 2012-10-11 Osram Opto Semiconductors Gmbh Anzeigevorrichtung
US8957429B2 (en) * 2012-02-07 2015-02-17 Epistar Corporation Light emitting diode with wavelength conversion layer
KR102087935B1 (ko) 2012-12-27 2020-03-11 엘지이노텍 주식회사 발광 소자
JP6176032B2 (ja) * 2013-01-30 2017-08-09 日亜化学工業株式会社 半導体発光素子
US10194537B2 (en) * 2013-03-25 2019-01-29 International Business Machines Corporation Minimizing printed circuit board warpage
DE102013107862A1 (de) * 2013-07-23 2015-01-29 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils
KR102209036B1 (ko) 2014-08-26 2021-01-28 엘지이노텍 주식회사 발광 소자 패키지
CN104329597B (zh) * 2014-09-10 2016-11-23 广东中塑新材料有限公司 一种无基板led灯及其制备方法
DE102015107586B4 (de) * 2015-05-13 2023-10-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement
JP6517643B2 (ja) * 2015-09-16 2019-05-22 株式会社ジャパンディスプレイ 表示装置の製造方法、および、表示装置
DE102016112584B4 (de) 2016-07-08 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip, Verfahren zur Herstellung eines Halbleiterchips und Vorrichtung mit einer Mehrzahl von Halbleiterchips
DE102016116353A1 (de) 2016-09-01 2018-03-01 Osram Opto Semiconductors Gmbh Verfahren zum Ausrichten von Halbleiterchips, Verfahren zum Anordnen von Halbleiterchips, Vorrichtung zur Herstellung eines Halbleiterbauteils und Halbleiterbauteil
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Also Published As

Publication number Publication date
US8154040B2 (en) 2012-04-10
DE102007021009A1 (de) 2008-04-10
US8796115B2 (en) 2014-08-05
CN101523598A (zh) 2009-09-02
JP2010505252A (ja) 2010-02-18
CN101523598B (zh) 2013-03-27
WO2008040315A3 (de) 2008-11-20
US20100012955A1 (en) 2010-01-21
KR20090071622A (ko) 2009-07-01
EP2057681A2 (de) 2009-05-13
KR101326636B1 (ko) 2013-11-08
US20120190140A1 (en) 2012-07-26
WO2008040315A2 (de) 2008-04-10
EP2057681B1 (de) 2018-11-07
TW200816530A (en) 2008-04-01

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MM4A Annulment or lapse of patent due to non-payment of fees