KR101308548B1 - 프린터블 반도체 구조들 및 관련 제조 및 조립 방법 - Google Patents

프린터블 반도체 구조들 및 관련 제조 및 조립 방법 Download PDF

Info

Publication number
KR101308548B1
KR101308548B1 KR1020127032629A KR20127032629A KR101308548B1 KR 101308548 B1 KR101308548 B1 KR 101308548B1 KR 1020127032629 A KR1020127032629 A KR 1020127032629A KR 20127032629 A KR20127032629 A KR 20127032629A KR 101308548 B1 KR101308548 B1 KR 101308548B1
Authority
KR
South Korea
Prior art keywords
printable semiconductor
semiconductor element
bridge
printable
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020127032629A
Other languages
English (en)
Korean (ko)
Other versions
KR20130006712A (ko
Inventor
랄프 지. 누조
존 에이. 로저스
에티엔 메나르드
이권재
강달영
유강 선
매튜 메이틀
쳉타오 츄
고흥조
맥 숀
Original Assignee
더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/145,542 external-priority patent/US7557367B2/en
Application filed by 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 filed Critical 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈
Priority claimed from PCT/US2006/021161 external-priority patent/WO2006130721A2/en
Publication of KR20130006712A publication Critical patent/KR20130006712A/ko
Application granted granted Critical
Publication of KR101308548B1 publication Critical patent/KR101308548B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3822—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7438—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020127032629A 2005-06-02 2006-06-01 프린터블 반도체 구조들 및 관련 제조 및 조립 방법 Active KR101308548B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US11/145,542 US7557367B2 (en) 2004-06-04 2005-06-02 Stretchable semiconductor elements and stretchable electrical circuits
PCT/US2005/019354 WO2005122285A2 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US11/145,542 2005-06-02
US11/145,574 US7622367B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
WOPCT/US2005/019354 2005-06-02
US11/145,574 2005-06-02
PCT/US2006/021161 WO2006130721A2 (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020087000080A Division KR101269566B1 (ko) 2005-06-02 2006-06-01 프린터블 반도체 구조들 및 관련 제조 및 조립 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137011761A Division KR101347687B1 (ko) 2005-06-02 2006-06-01 프린터블 반도체 구조들 및 관련 제조 및 조립 방법

Publications (2)

Publication Number Publication Date
KR20130006712A KR20130006712A (ko) 2013-01-17
KR101308548B1 true KR101308548B1 (ko) 2013-09-23

Family

ID=37787994

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127032629A Active KR101308548B1 (ko) 2005-06-02 2006-06-01 프린터블 반도체 구조들 및 관련 제조 및 조립 방법
KR1020087000080A Active KR101269566B1 (ko) 2005-06-02 2006-06-01 프린터블 반도체 구조들 및 관련 제조 및 조립 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020087000080A Active KR101269566B1 (ko) 2005-06-02 2006-06-01 프린터블 반도체 구조들 및 관련 제조 및 조립 방법

Country Status (3)

Country Link
EP (2) EP2937896B1 (https=)
JP (5) JP5164833B2 (https=)
KR (2) KR101308548B1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2925221B1 (fr) * 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
CN103872002B (zh) * 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
KR101004849B1 (ko) * 2008-09-02 2010-12-28 삼성전기주식회사 박막소자 제조방법
KR101077789B1 (ko) 2009-08-07 2011-10-28 한국과학기술원 Ｌｅｄ 디스플레이 제조 방법 및 이에 의하여 제조된 ｌｅｄ 디스플레이
KR101113692B1 (ko) 2009-09-17 2012-02-27 한국과학기술원 태양전지 제조방법 및 이에 의하여 제조된 태양전지
KR101221871B1 (ko) 2009-12-07 2013-01-15 한국전자통신연구원 반도체 소자의 제조방법
US9442285B2 (en) * 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
KR102211596B1 (ko) 2012-12-28 2021-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6124051B2 (ja) * 2013-02-01 2017-05-10 国立大学法人九州工業大学 細胞培養シート、およびその製造方法、並びにこれを用いた細胞培養容器
JP6078920B2 (ja) 2013-02-13 2017-02-15 国立大学法人広島大学 薄膜形成方法、及びそれを用いて作製した半導体基板ならびに電子デバイス
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
DE102013006624B3 (de) * 2013-04-18 2014-05-28 Forschungszentrum Jülich GmbH Hochfrequenzleiter mit verbesserter Leitfähigkeit und Verfahren seiner Herstellung
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
WO2015156874A2 (en) * 2014-01-15 2015-10-15 The Regents Of The Univerity Of Michigan Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
CN117198903A (zh) * 2014-07-20 2023-12-08 艾克斯展示公司技术有限公司 用于微转贴印刷的设备及方法
DE112015004894B4 (de) * 2014-10-28 2022-11-03 Analog Devices, Inc. Transferdruckverfahren
US10748793B1 (en) 2019-02-13 2020-08-18 X Display Company Technology Limited Printing component arrays with different orientations
TWI728364B (zh) * 2019-05-21 2021-05-21 國立陽明交通大學 氮化鎵異質整合於矽基板之半導體結構及其製造方法
US11062936B1 (en) 2019-12-19 2021-07-13 X Display Company Technology Limited Transfer stamps with multiple separate pedestals
KR102300920B1 (ko) * 2020-11-09 2021-09-13 한국과학기술원 InP 기판을 이용한 소자 제조 방법
JPWO2024209537A1 (https=) * 2023-04-04 2024-10-10
CN120050969B (zh) * 2025-02-25 2025-11-14 上海新微半导体有限公司 锑化物hemt结构、外延结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US678752A (en) * 1901-03-18 1901-07-16 Hugh P Mcardle Automatic means for throwing switches.
JP2003197881A (ja) 2001-12-27 2003-07-11 Seiko Epson Corp 半導体集積回路、半導体集積回路の製造方法、半導体素子部材、電気光学装置、電子機器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232437A (ja) * 1983-06-15 1984-12-27 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4766670A (en) 1987-02-02 1988-08-30 International Business Machines Corporation Full panel electronic packaging structure and method of making same
JPH03110855A (ja) * 1989-09-26 1991-05-10 Nissan Motor Co Ltd 半導体装置の製造方法
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
WO1997006012A1 (en) * 1995-08-04 1997-02-20 International Business Machines Corporation Stamp for a lithographic process
JP3761269B2 (ja) * 1996-12-27 2006-03-29 シチズン時計株式会社 液晶表示装置の製造方法
FR2781925B1 (fr) * 1998-07-30 2001-11-23 Commissariat Energie Atomique Transfert selectif d'elements d'un support vers un autre support
US6787052B1 (en) * 2000-06-19 2004-09-07 Vladimir Vaganov Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
JP4538951B2 (ja) * 2000-12-15 2010-09-08 ソニー株式会社 素子の選択転写方法、画像表示装置の製造方法及び液晶表示装置の製造方法
TW574753B (en) * 2001-04-13 2004-02-01 Sony Corp Manufacturing method of thin film apparatus and semiconductor device
US6887650B2 (en) * 2001-07-24 2005-05-03 Seiko Epson Corporation Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, ic card, and electronic appliance
JP4757469B2 (ja) * 2002-05-17 2011-08-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6805809B2 (en) * 2002-08-28 2004-10-19 Board Of Trustees Of University Of Illinois Decal transfer microfabrication
JP4378672B2 (ja) * 2002-09-03 2009-12-09 セイコーエプソン株式会社 回路基板の製造方法
JP4042608B2 (ja) * 2003-04-01 2008-02-06 セイコーエプソン株式会社 トランジスタ及び電子機器
US7078298B2 (en) * 2003-05-20 2006-07-18 Sharp Laboratories Of America, Inc. Silicon-on-nothing fabrication process
JP4341296B2 (ja) * 2003-05-21 2009-10-07 富士ゼロックス株式会社 フォトニック結晶３次元構造体の製造方法
JP4877870B2 (ja) * 2004-01-30 2012-02-15 株式会社半導体エネルギー研究所 半導体装置の製造方法
US11394720B2 (en) 2019-12-30 2022-07-19 Itron, Inc. Time synchronization using trust aggregation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US678752A (en) * 1901-03-18 1901-07-16 Hugh P Mcardle Automatic means for throwing switches.
JP2003197881A (ja) 2001-12-27 2003-07-11 Seiko Epson Corp 半導体集積回路、半導体集積回路の製造方法、半導体素子部材、電気光学装置、電子機器

Also Published As

Publication number Publication date
JP2013183163A (ja) 2013-09-12
JP5164833B2 (ja) 2013-03-21
EP4040474B1 (en) 2025-12-31
KR20080015921A (ko) 2008-02-20
EP2937896B1 (en) 2022-05-04
JP2015019095A (ja) 2015-01-29
JP2007027693A (ja) 2007-02-01
KR20130006712A (ko) 2013-01-17
JP5734261B2 (ja) 2015-06-17
JP2013080934A (ja) 2013-05-02
JP5701331B2 (ja) 2015-04-15
EP4040474A1 (en) 2022-08-10
KR101269566B1 (ko) 2013-06-07
JP5297581B2 (ja) 2013-09-25
JP6002725B2 (ja) 2016-10-05
JP2009508322A (ja) 2009-02-26
EP2937896A1 (en) 2015-10-28

Similar Documents

Publication Publication Date Title
EP1915774B1 (en) Printable semiconductor structures and related methods of making and assembling
US7799699B2 (en) Printable semiconductor structures and related methods of making and assembling
KR101308548B1 (ko) 프린터블 반도체 구조들 및 관련 제조 및 조립 방법
TWI427802B (zh) 可印刷半導體結構及製造和組合之相關方法
CN102176465B (zh) 可印刷半导体结构以及相关制造和组装方法
EP2650907B1 (en) Methods and devices for fabricating and assembling printable semiconductor elements
KR101347687B1 (ko) 프린터블 반도체 구조들 및 관련 제조 및 조립 방법
HK1191443B (en) Methods and devices for fabricating and assembling printable semiconductor elements
HK1196180A (en) Methods of assembling a printable semiconductor element and of making an electronic device
HK1191441A (en) Methods and devices for fabricating and assembling printable semiconductor elements
HK1191443A (en) Methods and devices for fabricating and assembling printable semiconductor elements

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

A107 Divisional application of patent
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20160818

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20170818

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20180824

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20190829

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000