KR101286428B1 - 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Download PDF

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KR101286428B1
KR101286428B1 KR1020110099246A KR20110099246A KR101286428B1 KR 101286428 B1 KR101286428 B1 KR 101286428B1 KR 1020110099246 A KR1020110099246 A KR 1020110099246A KR 20110099246 A KR20110099246 A KR 20110099246A KR 101286428 B1 KR101286428 B1 KR 101286428B1
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light shielding
film
mask
layer
less
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KR20120057508A (ko
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아쯔시 고미나또
마사히로 하시모또
오사무 노자와
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
KR1020110099246A 2010-09-30 2011-09-29 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 Active KR101286428B1 (ko)

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JPJP-P-2010-221661 2010-09-30
JP2010221661A JP5154626B2 (ja) 2010-09-30 2010-09-30 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法

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KR1020130058960A Division KR101568058B1 (ko) 2010-09-30 2013-05-24 반도체 디바이스의 제조 방법

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KR20120057508A KR20120057508A (ko) 2012-06-05
KR101286428B1 true KR101286428B1 (ko) 2013-07-19

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KR1020130058960A Active KR101568058B1 (ko) 2010-09-30 2013-05-24 반도체 디바이스의 제조 방법

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US (3) US8501372B2 (https=)
JP (1) JP5154626B2 (https=)
KR (2) KR101286428B1 (https=)
TW (2) TWI497191B (https=)

Families Citing this family (16)

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Publication number Priority date Publication date Assignee Title
KR20120083142A (ko) * 2011-01-17 2012-07-25 삼성전자주식회사 반도체 장치 및 반도체 장치의 형성 방법
KR20140023492A (ko) * 2012-08-16 2014-02-27 삼성코닝정밀소재 주식회사 스퍼터링 타겟 및 이에 의해 증착된 블랙 매트릭스를 포함하는 유기 발광 디스플레이 장치
JP5596111B2 (ja) * 2012-12-05 2014-09-24 Ｈｏｙａ株式会社 半導体デバイスの製造方法
KR102166222B1 (ko) * 2013-01-15 2020-10-15 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법
JP6185721B2 (ja) * 2013-01-29 2017-08-23 Hoya株式会社 マスクブランク、マスクブランクの製造方法、転写用マスクの製造方法、および半導体デバイスの製造方法
JP5880506B2 (ja) * 2013-09-19 2016-03-09 富士ゼロックス株式会社 処理装置
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP2016057577A (ja) * 2014-09-12 2016-04-21 信越化学工業株式会社 フォトマスクブランク
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6756541B2 (ja) * 2016-08-08 2020-09-16 東京応化工業株式会社 基板の製造方法
KR102254035B1 (ko) * 2016-08-26 2021-05-20 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크 및 반도체 디바이스의 제조 방법
CN106505158B (zh) * 2016-12-01 2019-07-09 Tcl集团股份有限公司 一种量子点发光二极管器件及其制备方法
JP6400763B2 (ja) 2017-03-16 2018-10-03 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP7463183B2 (ja) * 2019-06-26 2024-04-08 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP7331793B2 (ja) * 2020-06-30 2023-08-23 信越化学工業株式会社 フォトマスクの製造方法及びフォトマスクブランク

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009086389A (ja) 2007-09-30 2009-04-23 Hoya Corp フォトマスクブランク及びフォトマスクの製造方法
JP2010156880A (ja) 2008-12-29 2010-07-15 Hoya Corp フォトマスクブランクの製造方法及びフォトマスクの製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644146B2 (ja) * 1987-03-03 1994-06-08 三菱電機株式会社 フオトマスク
JP4897060B2 (ja) * 2003-06-05 2012-03-14 Ｎｔｎ株式会社 ローラ軸の製造方法
KR101052654B1 (ko) 2004-06-16 2011-07-28 호야 가부시키가이샤 광반투과막, 포토마스크 블랭크 및 포토마스크, 및 광반투과막의 설계 방법
JP2006078825A (ja) 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP4407815B2 (ja) 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4843304B2 (ja) * 2005-12-14 2011-12-21 富士通セミコンダクター株式会社 フォトマスクの製造方法、デバイスの製造方法、及び、フォトマスクのモニタ方法
JP4881633B2 (ja) 2006-03-10 2012-02-22 凸版印刷株式会社 クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法
CN102681332B (zh) 2006-05-30 2015-03-11 Hoya株式会社 抗蚀剂膜剥离方法、掩模基板的制造方法及转印掩模的制造方法
JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
TW201030451A (en) * 2008-09-30 2010-08-16 Hoya Corp Multi-tone photomask and method of manufacturing the same
US20100092894A1 (en) 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
JP5535932B2 (ja) 2008-10-29 2014-07-02 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法
JP5281362B2 (ja) 2008-10-31 2013-09-04 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法
TWI438562B (zh) 2009-01-06 2014-05-21 Ｈｏｙａ股份有限公司 光罩之製造方法、圖案轉印方法、光罩基板用處理裝置及薄膜圖案化方法
JP5317310B2 (ja) * 2009-03-31 2013-10-16 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009086389A (ja) 2007-09-30 2009-04-23 Hoya Corp フォトマスクブランク及びフォトマスクの製造方法
JP2010156880A (ja) 2008-12-29 2010-07-15 Hoya Corp フォトマスクブランクの製造方法及びフォトマスクの製造方法

Also Published As

Publication number Publication date
JP5154626B2 (ja) 2013-02-27
JP2012078441A (ja) 2012-04-19
TWI598679B (zh) 2017-09-11
US20130280646A1 (en) 2013-10-24
US9256122B2 (en) 2016-02-09
US9612527B2 (en) 2017-04-04
KR20120057508A (ko) 2012-06-05
US8501372B2 (en) 2013-08-06
TWI497191B (zh) 2015-08-21
TW201539113A (zh) 2015-10-16
TW201227168A (en) 2012-07-01
US20150227039A1 (en) 2015-08-13
US20120082924A1 (en) 2012-04-05
KR101568058B1 (ko) 2015-11-10
KR20130064092A (ko) 2013-06-17

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