KR101278517B1 - 신규의 감광성 수지 조성물 - Google Patents

신규의 감광성 수지 조성물 Download PDF

Info

Publication number
KR101278517B1
KR101278517B1 KR1020077029325A KR20077029325A KR101278517B1 KR 101278517 B1 KR101278517 B1 KR 101278517B1 KR 1020077029325 A KR1020077029325 A KR 1020077029325A KR 20077029325 A KR20077029325 A KR 20077029325A KR 101278517 B1 KR101278517 B1 KR 101278517B1
Authority
KR
South Korea
Prior art keywords
group
coated substrate
substrate
polymer
divalent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020077029325A
Other languages
English (en)
Korean (ko)
Other versions
KR20080018894A (ko
Inventor
다비드 피. 파웰
아마드 에이. 나이니
죤 메티비에르 엔.
일리야 러시킨
리챠드 홉라
Original Assignee
후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. filed Critical 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨.
Publication of KR20080018894A publication Critical patent/KR20080018894A/ko
Application granted granted Critical
Publication of KR101278517B1 publication Critical patent/KR101278517B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
KR1020077029325A 2005-06-03 2006-06-02 신규의 감광성 수지 조성물 Expired - Fee Related KR101278517B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68743405P 2005-06-03 2005-06-03
US60/687,434 2005-06-03
PCT/US2006/021441 WO2006132962A2 (en) 2005-06-03 2006-06-02 Novel photosensitive resin compositions

Publications (2)

Publication Number Publication Date
KR20080018894A KR20080018894A (ko) 2008-02-28
KR101278517B1 true KR101278517B1 (ko) 2013-06-26

Family

ID=37498941

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077029325A Expired - Fee Related KR101278517B1 (ko) 2005-06-03 2006-06-02 신규의 감광성 수지 조성물

Country Status (6)

Country Link
US (1) US7220520B2 (https=)
EP (1) EP1886187A4 (https=)
JP (1) JP4759613B2 (https=)
KR (1) KR101278517B1 (https=)
TW (1) TWI402616B (https=)
WO (1) WO2006132962A2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1861749A4 (en) * 2005-03-25 2010-10-06 Fujifilm Electronic Materials NEW PHOTOSENSITIVE RESIN COMPOSITIONS
KR20080018899A (ko) * 2005-06-03 2008-02-28 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 전처리 조성물
JP4911454B2 (ja) * 2006-09-19 2012-04-04 富士フイルム株式会社 ポリベンゾオキサゾール前駆体、それを用いた感光性樹脂組成物及び半導体装置の製造方法
JP5028059B2 (ja) * 2006-09-28 2012-09-19 富士フイルム株式会社 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置
KR101423061B1 (ko) * 2008-01-30 2014-07-25 닛산 가가쿠 고교 가부시키 가이샤 유황원자를 함유하는 레지스트 하층막 형성용 조성물 및 레지스트패턴의 형성방법
KR100932765B1 (ko) * 2008-02-28 2009-12-21 한양대학교 산학협력단 폴리이미드-폴리벤조옥사졸 공중합체, 이의 제조방법, 및이를 포함하는 기체 분리막
CA2640517A1 (en) * 2008-05-19 2009-11-19 Industry-University Cooperation Foundation, Hanyang University Polyamic acids dope composition, preparation method of hollow fiber using the same and hollow fiber prepared therefrom
US8013103B2 (en) * 2008-10-10 2011-09-06 Industry-University Cooperation Foundation, Hanyang University Polymer compounds and a preparation method thereof
US8487064B2 (en) 2008-10-10 2013-07-16 Industry-University Cooperation Foundation, Hanyang University Polymer compounds and a preparation method thereof
KR101791265B1 (ko) * 2010-12-13 2017-10-30 동우 화인켐 주식회사 포지티브형 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴 형성방법
JP6048257B2 (ja) * 2013-03-25 2016-12-21 東レ株式会社 耐熱性樹脂及びその前駆体組成物
JP6225445B2 (ja) * 2013-03-26 2017-11-08 東レ株式会社 ドライエッチング用フォトレジスト、それを用いたレリーフパターンおよび発光素子の製造方法
JP2019028316A (ja) 2017-07-31 2019-02-21 太陽ホールディングス株式会社 感光性樹脂組成物、ドライフィルム、硬化物、プリント配線板および半導体素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4339521A (en) 1979-08-01 1982-07-13 Siemens Aktiengesellschaft Heat resistant positive resists containing polyoxazoles

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873316A (en) 1970-06-11 1975-03-25 Kalle Ag Process for the production of a light-sensitive copying material having a copper-containing support, and copying material so produced
US3645772A (en) 1970-06-30 1972-02-29 Du Pont Process for improving bonding of a photoresist to copper
DE3021748A1 (de) 1980-06-10 1981-12-17 Siemens AG, 1000 Berlin und 8000 München Strahlungsreaktive vorstufen hochwaermebestaendiger polymerer
DE3411659A1 (de) 1984-03-29 1985-10-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von polyoxazol- und polythiazol-vorstufen
EP0291779B1 (de) 1987-05-18 1994-07-27 Siemens Aktiengesellschaft Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen
US5037720A (en) 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
US5214116A (en) * 1989-02-07 1993-05-25 Tokuyama Soda Kabushiki Kaisha Resin derived from sulfur-containing unsaturated compound and having a high refractive index
EP0391196A3 (de) 1989-04-06 1991-02-27 Siemens Aktiengesellschaft Herstellung von Hydroxypolyamiden
DE59208963D1 (de) 1991-05-07 1997-11-20 Siemens Ag Hochwärmebeständige Positivresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen
US5434031A (en) * 1992-11-18 1995-07-18 Tokyo Ohka Kogyo Co., Ltd. Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive
TW263534B (https=) 1993-08-11 1995-11-21 Makkusu Kk
JP3748086B2 (ja) 1996-06-05 2006-02-22 日立化成工業株式会社 感光材料、レリーフパターンの製造法及びポリイミドパターンの製造法
US6001517A (en) * 1996-10-31 1999-12-14 Kabushiki Kaisha Toshiba Positive photosensitive polymer composition, method of forming a pattern and electronic parts
US6214516B1 (en) * 1998-10-01 2001-04-10 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
US6177225B1 (en) * 1998-10-01 2001-01-23 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
JP3667184B2 (ja) 1999-02-26 2005-07-06 住友ベークライト株式会社 半導体装置
EP1606326A2 (en) * 2003-03-11 2005-12-21 FujiFilm Electronic Materials USA, Inc. Novel photosensitive resin compositions
WO2004109400A2 (en) * 2003-03-11 2004-12-16 Arch Speciality Chemicals, Inc. Novel photosensitive resin compositions
TWI363249B (en) * 2003-10-15 2012-05-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
JP4403811B2 (ja) * 2004-01-26 2010-01-27 東レ株式会社 ポジ型感光性樹脂組成物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4339521A (en) 1979-08-01 1982-07-13 Siemens Aktiengesellschaft Heat resistant positive resists containing polyoxazoles

Also Published As

Publication number Publication date
US7220520B2 (en) 2007-05-22
KR20080018894A (ko) 2008-02-28
TW200702911A (en) 2007-01-16
EP1886187A4 (en) 2010-10-06
JP2008546027A (ja) 2008-12-18
WO2006132962A2 (en) 2006-12-14
EP1886187A2 (en) 2008-02-13
JP4759613B2 (ja) 2011-08-31
US20060275699A1 (en) 2006-12-07
WO2006132962A3 (en) 2007-05-10
TWI402616B (zh) 2013-07-21

Similar Documents

Publication Publication Date Title
US7407731B2 (en) Photosensitive resin compositions
JP3507798B2 (ja) 新規な光感受性樹脂組成物
US20040229167A1 (en) Novel photosensitive resin compositions
US20090004444A1 (en) Novel Photosensitive Resin Compositions
KR101278517B1 (ko) 신규의 감광성 수지 조성물
WO2009052177A1 (en) Novel photosensitive resin compositions
KR20060004908A (ko) 새로운 감광성 수지 조성물들
CN102159995A (zh) 正性光敏树脂组合物
EP1811340A2 (en) Photosensitive resin composition and manufacturing method of semiconductor device using the same
WO2000019275A1 (en) Novel photosensitive resin compositions
JP2007199606A (ja) 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
JP2007240975A (ja) 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
JP4530949B2 (ja) 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
JP2007297531A (ja) ポリアミド樹脂、該樹脂を用いた感光性樹脂組成物及び半導体装置の製造方法
JP2007206637A (ja) 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
JP2007072109A (ja) 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
JP2007114693A (ja) 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
JP2007240976A (ja) 感光性樹脂組成物及びそれを用いた半導体装置の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160620

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160620