KR101274927B1 - 후막도체형성용 조성물, 이 조성물을 이용하여 형성된 후막도체 및 이 후막도체를 이용한 칩 저항기 - Google Patents
후막도체형성용 조성물, 이 조성물을 이용하여 형성된 후막도체 및 이 후막도체를 이용한 칩 저항기 Download PDFInfo
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- KR101274927B1 KR101274927B1 KR1020110075793A KR20110075793A KR101274927B1 KR 101274927 B1 KR101274927 B1 KR 101274927B1 KR 1020110075793 A KR1020110075793 A KR 1020110075793A KR 20110075793 A KR20110075793 A KR 20110075793A KR 101274927 B1 KR101274927 B1 KR 101274927B1
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- powder
- thick film
- film conductor
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- Prior art date
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- 239000004020 conductor Substances 0.000 title claims abstract description 115
- 239000000203 mixture Substances 0.000 title claims abstract description 88
- 239000000843 powder Substances 0.000 claims abstract description 181
- 239000011521 glass Substances 0.000 claims abstract description 85
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 50
- 229910000679 solder Inorganic materials 0.000 claims abstract description 42
- 229910018068 Li 2 O Inorganic materials 0.000 claims abstract description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 18
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- 239000011575 calcium Substances 0.000 claims description 53
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 50
- 239000010433 feldspar Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 33
- 239000000919 ceramic Substances 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 14
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 7
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- 238000000576 coating method Methods 0.000 claims description 6
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- 238000005476 soldering Methods 0.000 description 32
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- 229910052717 sulfur Inorganic materials 0.000 description 13
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 229910000510 noble metal Inorganic materials 0.000 description 8
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- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010730 cutting oil Substances 0.000 description 4
- 239000010970 precious metal Substances 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
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- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 2
- 229910020922 Sn-Pb Inorganic materials 0.000 description 2
- 229910008783 Sn—Pb Inorganic materials 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
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- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
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- 230000010485 coping Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000010428 oil painting Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000003878 thermal aging Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Non-Adjustable Resistors (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2010-183323 | 2010-08-18 | ||
JP2010183323A JP5454414B2 (ja) | 2010-08-18 | 2010-08-18 | 厚膜導体形成用組成物、この組成物を用いて形成された厚膜導体、およびこの厚膜導体を用いたチップ抵抗器 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120017396A KR20120017396A (ko) | 2012-02-28 |
KR101274927B1 true KR101274927B1 (ko) | 2013-06-17 |
Family
ID=45839356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110075793A Active KR101274927B1 (ko) | 2010-08-18 | 2011-07-29 | 후막도체형성용 조성물, 이 조성물을 이용하여 형성된 후막도체 및 이 후막도체를 이용한 칩 저항기 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5454414B2 (enrdf_load_stackoverflow) |
KR (1) | KR101274927B1 (enrdf_load_stackoverflow) |
CN (1) | CN102426871B (enrdf_load_stackoverflow) |
TW (1) | TWI429609B (enrdf_load_stackoverflow) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6011006B2 (ja) * | 2012-04-27 | 2016-10-19 | ブラザー工業株式会社 | 液滴噴射装置 |
JP6114001B2 (ja) * | 2012-10-26 | 2017-04-12 | 京セラ株式会社 | 導電性ペーストおよび回路基板ならびに電子装置 |
JP6201190B2 (ja) * | 2014-04-25 | 2017-09-27 | 住友金属鉱山株式会社 | 厚膜導体形成用組成物及びそれを用いて得られる厚膜導体 |
CA2939537C (en) | 2014-09-12 | 2017-07-18 | Shoei Chemical Inc. | Resistive composition |
CN109065837B (zh) | 2014-11-10 | 2021-08-24 | 株式会社村田制作所 | 锂离子导体、电池及电子装置 |
JP2016219256A (ja) * | 2015-05-20 | 2016-12-22 | 住友金属鉱山株式会社 | Cuペースト組成物および厚膜導体 |
JP6952949B2 (ja) * | 2016-10-04 | 2021-10-27 | 日本電気硝子株式会社 | ホウケイ酸系ガラス、複合粉末材料及び複合粉末材料ペースト |
WO2018190057A1 (ja) * | 2017-04-14 | 2018-10-18 | パナソニックIpマネジメント株式会社 | チップ抵抗器 |
KR102639865B1 (ko) | 2017-12-15 | 2024-02-22 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 후막 도체 형성용 분말 조성물 및 후막 도체 형성용 페이스트 |
CN111453987B (zh) * | 2019-01-21 | 2022-04-22 | 中国科学院过程工程研究所 | 一种与氧化铝完全化学相容的玻璃组合物、其制备方法和应用 |
CN110660544B (zh) * | 2019-10-14 | 2021-09-28 | 安徽翔胜科技有限公司 | 一种抗环境气体腐蚀的电阻 |
CN112071465B (zh) * | 2020-09-18 | 2022-04-08 | 西安宏星电子浆料科技股份有限公司 | 一种包含含镍的合金粉的抗银迁移片式电阻正面电极浆料 |
CN113782251A (zh) * | 2021-09-09 | 2021-12-10 | 南京汇聚新材料科技有限公司 | 一种电极膏体和电极厚膜及其制备方法 |
CN118280627A (zh) * | 2024-04-29 | 2024-07-02 | 江苏日御光伏新材料股份有限公司 | 一种TOPCon电池用低固含背面浆料,制备方法,电极及电池 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06223616A (ja) * | 1993-01-27 | 1994-08-12 | Sumitomo Metal Mining Co Ltd | 導電ペースト用組成物 |
JPH0797269A (ja) * | 1993-09-27 | 1995-04-11 | Mitsubishi Materials Corp | 低温焼結性セラミックスの製造方法 |
JP2001114556A (ja) | 1999-10-20 | 2001-04-24 | Sumitomo Metal Electronics Devices Inc | ガラスセラミック基板の製造方法 |
JP2006228572A (ja) | 2005-02-17 | 2006-08-31 | Sumitomo Metal Mining Co Ltd | 厚膜導体形成用組成物 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060102228A1 (en) * | 2004-11-12 | 2006-05-18 | Ferro Corporation | Method of making solar cell contacts |
JP2006294589A (ja) * | 2005-03-17 | 2006-10-26 | Sumitomo Metal Mining Co Ltd | 抵抗ペースト及び抵抗体 |
ES2651625T3 (es) * | 2007-04-25 | 2018-01-29 | Heraeus Precious Metals North America Conshohocken Llc | Formulaciones para conductores de película gruesa, que comprenden plata y níquel o aleaciones de plata y níquel y celdas solares fabricadas a partir de las mismas |
-
2010
- 2010-08-18 JP JP2010183323A patent/JP5454414B2/ja active Active
-
2011
- 2011-07-29 KR KR1020110075793A patent/KR101274927B1/ko active Active
- 2011-08-12 CN CN201110234203.3A patent/CN102426871B/zh active Active
- 2011-08-17 TW TW100129331A patent/TWI429609B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06223616A (ja) * | 1993-01-27 | 1994-08-12 | Sumitomo Metal Mining Co Ltd | 導電ペースト用組成物 |
JPH0797269A (ja) * | 1993-09-27 | 1995-04-11 | Mitsubishi Materials Corp | 低温焼結性セラミックスの製造方法 |
JP2001114556A (ja) | 1999-10-20 | 2001-04-24 | Sumitomo Metal Electronics Devices Inc | ガラスセラミック基板の製造方法 |
JP2006228572A (ja) | 2005-02-17 | 2006-08-31 | Sumitomo Metal Mining Co Ltd | 厚膜導体形成用組成物 |
Also Published As
Publication number | Publication date |
---|---|
JP2012043622A (ja) | 2012-03-01 |
TWI429609B (zh) | 2014-03-11 |
KR20120017396A (ko) | 2012-02-28 |
JP5454414B2 (ja) | 2014-03-26 |
TW201213269A (en) | 2012-04-01 |
CN102426871A (zh) | 2012-04-25 |
CN102426871B (zh) | 2015-07-01 |
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