KR101227706B1 - 화상 처리 방법, 화상 처리 장치 및 이 화상 처리 장치를 이용한 표면 검사 장치 - Google Patents

화상 처리 방법, 화상 처리 장치 및 이 화상 처리 장치를 이용한 표면 검사 장치 Download PDF

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KR101227706B1
KR101227706B1 KR1020117006596A KR20117006596A KR101227706B1 KR 101227706 B1 KR101227706 B1 KR 101227706B1 KR 1020117006596 A KR1020117006596 A KR 1020117006596A KR 20117006596 A KR20117006596 A KR 20117006596A KR 101227706 B1 KR101227706 B1 KR 101227706B1
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KR20110057170A (ko
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히로시 와카바
요시노리 하야시
코이치 미야조노
쇼조 가와사키
히데키 모리
카즈히코 하마타니
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시바우라 메카트로닉스 가부시키가이샤
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T1/00—General purpose image data processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30121—CRT, LCD or plasma display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Image Processing (AREA)
  • Image Analysis (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020117006596A 2008-10-14 2009-10-14 화상 처리 방법, 화상 처리 장치 및 이 화상 처리 장치를 이용한 표면 검사 장치 Expired - Fee Related KR101227706B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008265808 2008-10-14
JPJP-P-2008-265808 2008-10-14
PCT/JP2009/067808 WO2010044433A1 (ja) 2008-10-14 2009-10-14 画像処理方法、画像処理装置及び該画像処理装置を用いた表面検査装置

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KR20110057170A KR20110057170A (ko) 2011-05-31
KR101227706B1 true KR101227706B1 (ko) 2013-01-29

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JP (1) JP2010118046A (enExample)
KR (1) KR101227706B1 (enExample)
CN (1) CN102177428B (enExample)
WO (1) WO2010044433A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011110783A1 (de) * 2011-08-22 2013-02-28 Focke & Co. (Gmbh & Co. Kg) Verfahren und Vorrichtung zum Prüfen stabförmiger Tabakprodukte
CN103149215B (zh) * 2013-02-27 2016-04-13 中国计量学院 一种钢化玻璃绝缘子缺陷检测方法与装置
CN103530885B (zh) * 2013-10-23 2015-10-07 北京倍肯恒业科技发展有限责任公司 一种一维图像自适应分层边缘检测提取方法
CN106767425B (zh) * 2016-11-07 2019-07-26 无锡市莱科自动化科技有限公司 一种轴承卡簧豁口的视觉测量方法
CN107680048B (zh) * 2017-09-05 2020-11-10 信利（惠州）智能显示有限公司 一种边缘显示效果处理方法
CN108844471B (zh) * 2018-08-02 2019-05-07 成都天衡智造科技有限公司 一种对圆形工件边缘凹陷区域向圆心延伸长度的测量方法及装置
KR102606069B1 (ko) * 2020-12-28 2023-11-24 세메스 주식회사 웨이퍼 검사 방법
CN112884769B (zh) * 2021-04-12 2021-09-28 深圳中科飞测科技股份有限公司 图像处理方法、装置、光学系统和计算机可读存储介质
CN115775241B (zh) * 2022-12-04 2023-07-07 武汉惠强新能源材料科技有限公司 用于锂电池隔膜生产的流延厚度均匀性检测方法

Citations (2)

* Cited by examiner, † Cited by third party
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JPH0968502A (ja) * 1995-08-30 1997-03-11 Dainippon Screen Mfg Co Ltd 透孔板の検査方法および検査装置
JP2008216248A (ja) * 2007-02-28 2008-09-18 Vistec Semiconductor Systems Gmbh ウエハ縁端部の上部表面の欠陥の高分解能画像を取得する方法

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JPH0718811B2 (ja) * 1989-03-15 1995-03-06 松下電工株式会社 欠陥検査方法
JP2803930B2 (ja) * 1991-11-22 1998-09-24 株式会社三協精機製作所 円形パターン識別方法および装置
JPH0772097A (ja) * 1993-09-03 1995-03-17 Dainippon Printing Co Ltd 欠陥検査方法
JPH10311776A (ja) * 1997-03-13 1998-11-24 Asahi Optical Co Ltd 光学部材検査装置
JP3580088B2 (ja) * 1997-06-25 2004-10-20 松下電工株式会社 外観検査方法
DE69800756T2 (de) * 1998-10-15 2001-08-09 Wacker Siltronic Gesellschaft Fuer Halbleitermaterialien Ag Verfahren und Vorrichtung zum Detektieren, Überwachung und Charakterisierung von Kantendefekten in Halbleiterscheiben
JP2001221749A (ja) * 2000-02-10 2001-08-17 Hitachi Ltd 観察装置及び観察方法
JP2002325246A (ja) * 2001-04-25 2002-11-08 Univ Waseda 競技場用中継システム
JP2002328094A (ja) * 2001-05-02 2002-11-15 Nidec Tosok Corp Ｌｅｄリング照明及びそれを備えた画像検査装置
JP3385276B2 (ja) * 2001-08-27 2003-03-10 東芝アイティー・ソリューション株式会社 円形体の形状検査装置
JP2007147441A (ja) * 2005-11-28 2007-06-14 Nikon Corp 検査装置
JP2007234932A (ja) * 2006-03-02 2007-09-13 Olympus Corp 外観検査装置
US7636156B2 (en) * 2007-06-15 2009-12-22 Qimonda Ag Wafer inspection system and method
JP5128920B2 (ja) * 2007-12-03 2013-01-23 芝浦メカトロニクス株式会社 基板表面検査装置及び基板表面検査方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0968502A (ja) * 1995-08-30 1997-03-11 Dainippon Screen Mfg Co Ltd 透孔板の検査方法および検査装置
JP2008216248A (ja) * 2007-02-28 2008-09-18 Vistec Semiconductor Systems Gmbh ウエハ縁端部の上部表面の欠陥の高分解能画像を取得する方法

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CN102177428B (zh) 2013-01-02
JP2010118046A (ja) 2010-05-27
CN102177428A (zh) 2011-09-07
KR20110057170A (ko) 2011-05-31
WO2010044433A1 (ja) 2010-04-22

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