KR101219035B1 - 유기 박막 트랜지스터 표시판 및 그 제조 방법 - Google Patents

유기 박막 트랜지스터 표시판 및 그 제조 방법 Download PDF

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Publication number
KR101219035B1
KR101219035B1 KR1020050037082A KR20050037082A KR101219035B1 KR 101219035 B1 KR101219035 B1 KR 101219035B1 KR 1020050037082 A KR1020050037082 A KR 1020050037082A KR 20050037082 A KR20050037082 A KR 20050037082A KR 101219035 B1 KR101219035 B1 KR 101219035B1
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KR
South Korea
Prior art keywords
forming
organic material
thin film
film transistor
organic
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Expired - Fee Related
Application number
KR1020050037082A
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English (en)
Korean (ko)
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KR20060114889A (ko
Inventor
김보성
홍문표
이우재
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삼성디스플레이 주식회사
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Application filed by 삼성디스플레이 주식회사 filed Critical 삼성디스플레이 주식회사
Priority to KR1020050037082A priority Critical patent/KR101219035B1/ko
Priority to US11/416,968 priority patent/US20060197884A1/en
Priority to TW095115747A priority patent/TWI434446B/zh
Priority to JP2006129039A priority patent/JP2006313913A/ja
Priority to CNB2006100886658A priority patent/CN100517744C/zh
Publication of KR20060114889A publication Critical patent/KR20060114889A/ko
Priority to US12/889,613 priority patent/US8293569B2/en
Application granted granted Critical
Publication of KR101219035B1 publication Critical patent/KR101219035B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • A—HUMAN NECESSITIES
    • A63—SPORTS; GAMES; AMUSEMENTS
    • A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
    • A63H33/00—Other toys
    • A63H33/04—Building blocks, strips, or similar building parts
    • A63H33/046—Building blocks, strips, or similar building parts comprising magnetic interaction means, e.g. holding together by magnetic attraction
    • A—HUMAN NECESSITIES
    • A63—SPORTS; GAMES; AMUSEMENTS
    • A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
    • A63H33/00—Other toys
    • A63H33/04—Building blocks, strips, or similar building parts
    • A63H33/10—Building blocks, strips, or similar building parts to be assembled by means of additional non-adhesive elements
    • A63H33/108—Building blocks, strips, or similar building parts to be assembled by means of additional non-adhesive elements with holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020050037082A 2005-03-05 2005-05-03 유기 박막 트랜지스터 표시판 및 그 제조 방법 Expired - Fee Related KR101219035B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050037082A KR101219035B1 (ko) 2005-05-03 2005-05-03 유기 박막 트랜지스터 표시판 및 그 제조 방법
US11/416,968 US20060197884A1 (en) 2005-03-05 2006-05-03 Organic thin film transistor array panel and method of manufacturing the same
TW095115747A TWI434446B (zh) 2005-05-03 2006-05-03 有機薄膜電晶體陣列面板及其製造方法
JP2006129039A JP2006313913A (ja) 2005-05-03 2006-05-08 有機薄膜トランジスタ表示板及びその製造方法
CNB2006100886658A CN100517744C (zh) 2005-05-03 2006-05-08 有机薄膜晶体管阵列板及其制造方法
US12/889,613 US8293569B2 (en) 2005-05-03 2010-09-24 Organic thin film transistor array panel and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050037082A KR101219035B1 (ko) 2005-05-03 2005-05-03 유기 박막 트랜지스터 표시판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20060114889A KR20060114889A (ko) 2006-11-08
KR101219035B1 true KR101219035B1 (ko) 2013-01-07

Family

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Family Applications (1)

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KR1020050037082A Expired - Fee Related KR101219035B1 (ko) 2005-03-05 2005-05-03 유기 박막 트랜지스터 표시판 및 그 제조 방법

Country Status (5)

Country Link
US (2) US20060197884A1 (enExample)
JP (1) JP2006313913A (enExample)
KR (1) KR101219035B1 (enExample)
CN (1) CN100517744C (enExample)
TW (1) TWI434446B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070053060A (ko) * 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
KR101197059B1 (ko) * 2006-07-11 2012-11-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5286826B2 (ja) * 2007-03-28 2013-09-11 凸版印刷株式会社 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、およびアクティブマトリスクディスプレイ
JP2010040897A (ja) * 2008-08-07 2010-02-18 Sony Corp 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器
JP5708980B2 (ja) * 2009-08-24 2015-04-30 株式会社リコー 有機電子デバイスの製造方法および有機電子デバイス
US8877546B2 (en) * 2010-05-28 2014-11-04 Corning Incorporated Enhanced semiconductor devices employing photoactive organic materials and methods of manufacturing same
KR101909704B1 (ko) * 2011-02-17 2018-10-19 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
GB2490165A (en) * 2011-04-21 2012-10-24 Cpi Innovation Services Ltd Organic thin film transistor with crystal grain variation compensated by shape of source and drain electrodes
KR20130011856A (ko) * 2011-07-22 2013-01-30 삼성디스플레이 주식회사 표시기판 및 그 제조방법
DE102011052583A1 (de) 2011-08-11 2013-02-14 Hella Kgaa Hueck & Co. Lichtmodul für eine Außenleuchte
KR101774491B1 (ko) * 2011-10-14 2017-09-13 삼성전자주식회사 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들
US9366905B2 (en) * 2011-12-05 2016-06-14 Shenzhen China Star Optoelectronics Technology Co., Ltd. Liquid crystal panel and manufacturing method for the same
US20140036188A1 (en) * 2012-08-01 2014-02-06 Cheng-Hung Chen Liquid Crystal Display Device, Array Substrate and Manufacturing Method Thereof
KR102027361B1 (ko) * 2013-02-13 2019-10-01 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법과 상기 박막 트랜지스터 표시판을 포함하는 전자 소자
CN103383946B (zh) 2013-07-12 2016-05-25 京东方科技集团股份有限公司 一种阵列基板、显示装置及阵列基板的制备方法
GB2519081B (en) * 2013-10-08 2019-07-03 Flexenable Ltd Electronic devices including organic materials
CN104091886B (zh) * 2014-07-04 2016-11-23 京东方科技集团股份有限公司 一种有机薄膜晶体管、阵列基板及制备方法、显示装置
CN106876415B (zh) * 2017-03-20 2019-09-10 上海天马微电子有限公司 一种薄膜晶体管阵列基板及其制造方法
CN111725242B (zh) * 2020-06-30 2022-09-02 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
CN113193031B (zh) * 2021-04-29 2022-10-04 Tcl华星光电技术有限公司 显示面板和显示装置
US12009369B2 (en) 2021-04-29 2024-06-11 Tcl China Star Optoelectronics Technology Co., Ltd. Display panel and display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法
US6413790B1 (en) * 1999-07-21 2002-07-02 E Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
US20040119073A1 (en) * 2002-12-20 2004-06-24 International Business Machines Corporation Synthesis and application of photosensitive pentacene precursor in organic thin film transistors
JP2004260057A (ja) * 2003-02-27 2004-09-16 Konica Minolta Holdings Inc 有機薄膜トランジスタおよびその製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
US6580127B1 (en) * 1999-09-30 2003-06-17 International Business Machines Corporation High performance thin film transistor and active matrix process for flat panel displays
US6882045B2 (en) * 1999-10-28 2005-04-19 Thomas J. Massingill Multi-chip module and method for forming and method for deplating defective capacitors
GB2373095A (en) 2001-03-09 2002-09-11 Seiko Epson Corp Patterning substrates with evaporation residues
GB0112611D0 (en) 2001-05-23 2001-07-18 Plastic Logic Ltd Patterning of devices
GB0116735D0 (en) 2001-07-09 2001-08-29 Plastic Logic Ltd Alignment of polymers
US6919158B2 (en) 2001-08-03 2005-07-19 Fuji Photo Film Co., Ltd. Conductive pattern material and method for forming conductive pattern
GB2379083A (en) 2001-08-20 2003-02-26 Seiko Epson Corp Inkjet printing on a substrate using two immiscible liquids
KR100961251B1 (ko) 2001-10-01 2010-06-03 코닌클리케 필립스 일렉트로닉스 엔.브이. 조성물, 전자 디바이스 및 전자 디바이스의 제조 방법
JP2003229579A (ja) 2001-11-28 2003-08-15 Konica Corp 電界効果トランジスタ及びその製造方法
JP4360801B2 (ja) 2001-12-25 2009-11-11 シャープ株式会社 トランジスタおよびそれを用いた表示装置
KR100774258B1 (ko) 2001-12-27 2007-11-08 엘지.필립스 엘시디 주식회사 액정표시장치용 잉크젯 방식 스페이서
JP3995476B2 (ja) * 2001-12-28 2007-10-24 三洋電機株式会社 表示装置及びその製造方法
JP2003318190A (ja) 2002-04-22 2003-11-07 Seiko Epson Corp 半導体装置の製造方法、電気光学装置の製造方法、電子機器
JP2004031933A (ja) 2002-05-09 2004-01-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法及び、それにより製造された有機薄膜トランジスタと有機薄膜トランジスタシート
GB2388709A (en) 2002-05-17 2003-11-19 Seiko Epson Corp Circuit fabrication method
GB2391385A (en) 2002-07-26 2004-02-04 Seiko Epson Corp Patterning method by forming indent region to control spreading of liquid material deposited onto substrate
JP2004273982A (ja) 2003-03-12 2004-09-30 Konica Minolta Holdings Inc 薄膜トランジスタシートの製造方法
JP4713818B2 (ja) 2003-03-28 2011-06-29 パナソニック株式会社 有機トランジスタの製造方法、及び有機ｅｌ表示装置の製造方法
JP4500304B2 (ja) * 2003-05-12 2010-07-14 ケンブリッジ エンタープライズ リミティド ポリマーデバイスの製造
KR20050029426A (ko) * 2003-09-22 2005-03-28 삼성에스디아이 주식회사 칼라필터층 또는 색변환층을 갖는 풀칼라 유기전계발광소자
CN1605916B (zh) * 2003-10-10 2010-05-05 乐金显示有限公司 具有薄膜晶体管阵列基板的液晶显示板及它们的制造方法
JP4385812B2 (ja) * 2004-03-26 2009-12-16 株式会社日立製作所 薄膜トランジスタおよびその製造方法
KR100635565B1 (ko) * 2004-06-29 2006-10-17 삼성에스디아이 주식회사 유기전계발광 표시장치의 제조방법과 그에 따른 표시장치
JP4349307B2 (ja) * 2005-03-16 2009-10-21 セイコーエプソン株式会社 有機半導体装置の製造方法、有機半導体装置、電子デバイスおよび電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413790B1 (en) * 1999-07-21 2002-07-02 E Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法
US20040119073A1 (en) * 2002-12-20 2004-06-24 International Business Machines Corporation Synthesis and application of photosensitive pentacene precursor in organic thin film transistors
JP2004260057A (ja) * 2003-02-27 2004-09-16 Konica Minolta Holdings Inc 有機薄膜トランジスタおよびその製造方法

Also Published As

Publication number Publication date
CN100517744C (zh) 2009-07-22
CN1870284A (zh) 2006-11-29
US20060197884A1 (en) 2006-09-07
US20110014736A1 (en) 2011-01-20
US8293569B2 (en) 2012-10-23
TW200703735A (en) 2007-01-16
JP2006313913A (ja) 2006-11-16
TWI434446B (zh) 2014-04-11
KR20060114889A (ko) 2006-11-08

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