KR101218841B1 - 반도체 소자의 이동성 향상을 위한 방법 및 장치 - Google Patents

반도체 소자의 이동성 향상을 위한 방법 및 장치 Download PDF

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KR101218841B1
KR101218841B1 KR1020077004357A KR20077004357A KR101218841B1 KR 101218841 B1 KR101218841 B1 KR 101218841B1 KR 1020077004357 A KR1020077004357 A KR 1020077004357A KR 20077004357 A KR20077004357 A KR 20077004357A KR 101218841 B1 KR101218841 B1 KR 101218841B1
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source
substrate
channel region
semiconductor
silicon
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KR20070046139A (ko
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마리어스 케이. 오르로스키
수레쉬 벤카테산
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/795—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in lateral device isolation regions, e.g. STI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1020077004357A 2004-08-24 2005-07-27 반도체 소자의 이동성 향상을 위한 방법 및 장치 Expired - Lifetime KR101218841B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/925,108 US7288448B2 (en) 2004-08-24 2004-08-24 Method and apparatus for mobility enhancement in a semiconductor device
US10/925,108 2004-08-24
PCT/US2005/026543 WO2006023219A2 (en) 2004-08-24 2005-07-27 Method and apparatus for mobility enhancement in a semiconductor device

Publications (2)

Publication Number Publication Date
KR20070046139A KR20070046139A (ko) 2007-05-02
KR101218841B1 true KR101218841B1 (ko) 2013-01-21

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KR1020077004357A Expired - Lifetime KR101218841B1 (ko) 2004-08-24 2005-07-27 반도체 소자의 이동성 향상을 위한 방법 및 장치

Country Status (7)

Country Link
US (2) US7288448B2 (https=)
EP (1) EP1784854A2 (https=)
JP (1) JP5060296B2 (https=)
KR (1) KR101218841B1 (https=)
CN (1) CN100533690C (https=)
TW (1) TWI423342B (https=)
WO (1) WO2006023219A2 (https=)

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US7423283B1 (en) 2005-06-07 2008-09-09 Xilinx, Inc. Strain-silicon CMOS using etch-stop layer and method of manufacture
US7655991B1 (en) 2005-09-08 2010-02-02 Xilinx, Inc. CMOS device with stressed sidewall spacers
US7936006B1 (en) 2005-10-06 2011-05-03 Xilinx, Inc. Semiconductor device with backfilled isolation
JP2007157788A (ja) * 2005-11-30 2007-06-21 Toshiba Corp 半導体装置
US7479422B2 (en) * 2006-03-10 2009-01-20 Freescale Semiconductor, Inc. Semiconductor device with stressors and method therefor
US7279758B1 (en) * 2006-05-24 2007-10-09 International Business Machines Corporation N-channel MOSFETs comprising dual stressors, and methods for forming the same
DE102006035669B4 (de) * 2006-07-31 2014-07-10 Globalfoundries Inc. Transistor mit einem verformten Kanalgebiet, das eine leistungssteigernde Materialzusammensetzung aufweist und Verfahren zur Herstellung
US7897493B2 (en) * 2006-12-08 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Inducement of strain in a semiconductor layer
US8003454B2 (en) * 2008-05-22 2011-08-23 Freescale Semiconductor, Inc. CMOS process with optimized PMOS and NMOS transistor devices
US20090289280A1 (en) * 2008-05-22 2009-11-26 Da Zhang Method for Making Transistors and the Device Thereof
JP5295651B2 (ja) * 2008-06-13 2013-09-18 株式会社東芝 乱数生成装置
US8299453B2 (en) * 2009-03-03 2012-10-30 International Business Machines Corporation CMOS transistors with silicon germanium channel and dual embedded stressors
US20110049582A1 (en) * 2009-09-03 2011-03-03 International Business Machines Corporation Asymmetric source and drain stressor regions
US8035141B2 (en) * 2009-10-28 2011-10-11 International Business Machines Corporation Bi-layer nFET embedded stressor element and integration to enhance drive current
KR101576529B1 (ko) * 2010-02-12 2015-12-11 삼성전자주식회사 습식 식각을 이용한 실리콘 파셋트를 갖는 반도체 장치 및 제조방법
US8962417B2 (en) 2010-10-15 2015-02-24 International Business Machines Corporation Method and structure for pFET junction profile with SiGe channel
US8659054B2 (en) * 2010-10-15 2014-02-25 International Business Machines Corporation Method and structure for pFET junction profile with SiGe channel
CN103367430B (zh) * 2012-03-29 2016-11-02 中芯国际集成电路制造(上海)有限公司 晶体管以及形成方法
KR20150020845A (ko) * 2013-08-19 2015-02-27 에스케이하이닉스 주식회사 수직 채널을 갖는 반도체 장치, 그를 포함하는 저항 변화 메모리 장치 및 그 제조방법
FR3011119B1 (fr) * 2013-09-23 2017-09-29 Commissariat Energie Atomique Procede de realisation d'un transistor
FR3023411B1 (fr) * 2014-07-07 2017-12-22 Commissariat Energie Atomique Generation localisee de contrainte dans un substrat soi
CN105244281A (zh) * 2015-10-14 2016-01-13 上海华力微电子有限公司 一种半导体器件的制备方法
FR3087658B1 (fr) 2018-10-26 2021-09-17 Basf Beauty Care Solutions France Sas Nouvelles utilisations cosmetiques et dermatologiques d'un extrait du champignon inonotus obliquus
CN118825064B (zh) * 2024-09-03 2025-02-18 深圳平湖实验室 半导体器件及其制备方法、芯片、电子设备

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Publication number Publication date
CN1989602A (zh) 2007-06-27
WO2006023219A3 (en) 2006-09-28
JP2008511173A (ja) 2008-04-10
WO2006023219A2 (en) 2006-03-02
US7288448B2 (en) 2007-10-30
US20080006880A1 (en) 2008-01-10
EP1784854A2 (en) 2007-05-16
TWI423342B (zh) 2014-01-11
JP5060296B2 (ja) 2012-10-31
CN100533690C (zh) 2009-08-26
US20060046366A1 (en) 2006-03-02
TW200629419A (en) 2006-08-16
US7872311B2 (en) 2011-01-18
KR20070046139A (ko) 2007-05-02

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