KR101216790B1 - 플라즈마 처리 장치 및 전자 디바이스의 제조 방법 - Google Patents

플라즈마 처리 장치 및 전자 디바이스의 제조 방법 Download PDF

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Publication number
KR101216790B1
KR101216790B1 KR1020107014755A KR20107014755A KR101216790B1 KR 101216790 B1 KR101216790 B1 KR 101216790B1 KR 1020107014755 A KR1020107014755 A KR 1020107014755A KR 20107014755 A KR20107014755 A KR 20107014755A KR 101216790 B1 KR101216790 B1 KR 101216790B1
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South Korea
Prior art keywords
shield
plasma
chamber
substrate
processing apparatus
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Korean (ko)
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KR20100084705A (ko
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요오 다나까
가즈야 고나가
에이사꾸 와따나베
에이따로오 모리모또
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캐논 아네르바 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
    • F16B35/00—Screw-bolts; Stay-bolts; Screw-threaded studs; Screws; Set screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020107014755A 2008-07-31 2009-07-30 플라즈마 처리 장치 및 전자 디바이스의 제조 방법 Active KR101216790B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-197582 2008-07-31
JP2008197582 2008-07-31

Publications (2)

Publication Number Publication Date
KR20100084705A KR20100084705A (ko) 2010-07-27
KR101216790B1 true KR101216790B1 (ko) 2012-12-28

Family

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KR1020107014755A Active KR101216790B1 (ko) 2008-07-31 2009-07-30 플라즈마 처리 장치 및 전자 디바이스의 제조 방법

Country Status (5)

Country Link
US (1) US8303785B2 (https=)
JP (2) JP4580040B2 (https=)
KR (1) KR101216790B1 (https=)
CN (1) CN102105618B (https=)
WO (1) WO2010013476A1 (https=)

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US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9435029B2 (en) * 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
JP5458177B2 (ja) 2010-12-28 2014-04-02 キヤノンアネルバ株式会社 半導体装置の製造方法および装置
WO2012109104A2 (en) * 2011-02-09 2012-08-16 Applied Materials, Inc. Uniformity tuning capable esc grounding kit for rf pvd chamber
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
TW201325326A (zh) * 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
KR101909571B1 (ko) 2012-08-28 2018-10-19 어드밴스드 에너지 인더스트리즈 인코포레이티드 넓은 다이내믹 레인지 이온 에너지 바이어스 제어； 고속 이온 에너지 스위칭； 이온 에너지 제어와 펄스동작 바이어스 서플라이； 및 가상 전면 패널
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
DE102013005868A1 (de) 2013-04-05 2014-10-09 Leybold Optics Gmbh Vorrichtung zur Vakuumbehandlung von Substraten
SG11201700850QA (en) 2014-08-08 2017-03-30 Canon Anelva Corp Sputtering apparatus and processing apparatus
EP3387162A4 (en) * 2015-12-09 2019-07-24 Applied Materials, Inc. SYSTEM WITH CONFIGURATION FOR SPUTTER SEPARATION ON A SUBSTRATE, SHIELDING DEVICE FOR A SPUTTER SEPARATION CHAMBER, AND METHOD FOR PRODUCING AN ELECTRIC SHIELDING IN A SPUTTER SEPARATION CHAMBER
CN109473331B (zh) * 2017-09-08 2022-11-25 北京北方华创微电子装备有限公司 腔室屏蔽装置和半导体处理腔
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
WO2019099870A1 (en) 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Synchronized pulsing of plasma processing source and substrate bias
JP7289313B2 (ja) 2017-11-17 2023-06-09 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理のためのイオンバイアス電圧の空間的および時間的制御
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
KR20250153883A (ko) 2017-11-17 2025-10-27 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
CN111602235B (zh) 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
KR102071807B1 (ko) * 2018-10-31 2020-01-30 동국대학교 경주캠퍼스 산학협력단 듀오플라즈마트론의 교체형 중간전극판
KR102458281B1 (ko) * 2018-12-27 2022-10-24 가부시키가이샤 아루박 방착부재 및 진공처리장치
TW202536923A (zh) 2019-07-12 2025-09-16 新加坡商Aes 全球公司 具有控制開關之偏壓供應器
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US20210391146A1 (en) * 2020-06-11 2021-12-16 Applied Materials, Inc. Rf frequency control and ground path return in semiconductor process chambers
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
JP7776233B2 (ja) * 2022-06-16 2025-11-26 東京エレクトロン株式会社 成膜装置
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1064850A (ja) 1996-08-16 1998-03-06 Nec Yamagata Ltd スパッタリング装置

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JP3086095B2 (ja) * 1992-12-22 2000-09-11 キヤノン株式会社 スパッタリング装置
JP3563095B2 (ja) * 1993-10-28 2004-09-08 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4108354B2 (ja) * 2001-03-30 2008-06-25 キヤノンアネルバ株式会社 スパッタリング装置
JP4406188B2 (ja) * 2002-06-12 2010-01-27 キヤノンアネルバ株式会社 成膜装置
JP4451684B2 (ja) * 2004-03-17 2010-04-14 キヤノンアネルバ株式会社 真空処理装置
CN1315150C (zh) * 2004-11-12 2007-05-09 哈尔滨工业大学 等离子体脉冲注入的装置
JP4418032B2 (ja) * 2007-09-11 2010-02-17 キヤノンアネルバ株式会社 静電チャック
WO2009078094A1 (ja) * 2007-12-18 2009-06-25 Canon Anelva Corporation プラズマ処理装置
JP5324251B2 (ja) * 2008-05-16 2013-10-23 キヤノンアネルバ株式会社 基板保持装置

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH1064850A (ja) 1996-08-16 1998-03-06 Nec Yamagata Ltd スパッタリング装置

Also Published As

Publication number Publication date
WO2010013476A1 (ja) 2010-02-04
US8303785B2 (en) 2012-11-06
JP4580040B2 (ja) 2010-11-10
JP5189609B2 (ja) 2013-04-24
US20110089023A1 (en) 2011-04-21
KR20100084705A (ko) 2010-07-27
CN102105618B (zh) 2012-07-25
JPWO2010013476A1 (ja) 2012-01-05
JP2010163690A (ja) 2010-07-29
CN102105618A (zh) 2011-06-22

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