KR101200444B1 - 박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치 - Google Patents

박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치 Download PDF

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KR101200444B1
KR101200444B1 KR1020050063870A KR20050063870A KR101200444B1 KR 101200444 B1 KR101200444 B1 KR 101200444B1 KR 1020050063870 A KR1020050063870 A KR 1020050063870A KR 20050063870 A KR20050063870 A KR 20050063870A KR 101200444 B1 KR101200444 B1 KR 101200444B1
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South Korea
Prior art keywords
thin film
film transistor
region
substrate
gate
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KR1020050063870A
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English (en)
Korean (ko)
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KR20070009906A (ko
Inventor
정관욱
김웅식
최필모
송석천
맹호석
이상훈
박근우
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삼성디스플레이 주식회사
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Priority to KR1020050063870A priority Critical patent/KR101200444B1/ko
Priority to JP2006167923A priority patent/JP2007027704A/ja
Priority to CN2006101058838A priority patent/CN1897309B/zh
Priority to TW095125658A priority patent/TWI406417B/zh
Priority to US11/486,606 priority patent/US7821006B2/en
Publication of KR20070009906A publication Critical patent/KR20070009906A/ko
Priority to US12/891,598 priority patent/US8541811B2/en
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Publication of KR101200444B1 publication Critical patent/KR101200444B1/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
    • G02F1/13332—Front frames
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/58—Arrangements comprising a monitoring photodetector

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
KR1020050063870A 2005-07-14 2005-07-14 박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치 Expired - Lifetime KR101200444B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050063870A KR101200444B1 (ko) 2005-07-14 2005-07-14 박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치
JP2006167923A JP2007027704A (ja) 2005-07-14 2006-06-16 薄膜トランジスタ、薄膜トランジスタ基板、その製造方法、液晶表示装置、及び表示装置。
CN2006101058838A CN1897309B (zh) 2005-07-14 2006-07-13 薄膜晶体管和基板及基板的制造方法和液晶显示器
TW095125658A TWI406417B (zh) 2005-07-14 2006-07-13 Ｔｆｔ（薄膜電晶體）及利用其之ｔｆｔ基材，製造ｔｆｔ基材的方法及液晶顯示器
US11/486,606 US7821006B2 (en) 2005-07-14 2006-07-14 Liquid crystal display comprising light sensing TFT having opening in gate electrode
US12/891,598 US8541811B2 (en) 2005-07-14 2010-09-27 TFT with improved light sensing and TFT substrate using the same and liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050063870A KR101200444B1 (ko) 2005-07-14 2005-07-14 박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치

Publications (2)

Publication Number Publication Date
KR20070009906A KR20070009906A (ko) 2007-01-19
KR101200444B1 true KR101200444B1 (ko) 2012-11-12

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KR1020050063870A Expired - Lifetime KR101200444B1 (ko) 2005-07-14 2005-07-14 박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치

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US (2) US7821006B2 (https=)
JP (1) JP2007027704A (https=)
KR (1) KR101200444B1 (https=)
CN (1) CN1897309B (https=)
TW (1) TWI406417B (https=)

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DE102007057089B4 (de) * 2006-12-22 2010-04-29 Lg Display Co., Ltd. Flüssigkristallanzeige mit Photosensor und Herstellungsverfahren derselben
KR101362959B1 (ko) * 2007-03-30 2014-02-13 엘지디스플레이 주식회사 센싱기능을 가지는 액정표시장치 및 그의 제조방법
KR101419221B1 (ko) * 2007-06-19 2014-07-15 엘지디스플레이 주식회사 액정표시장치의 광센서 및 그의 제조방법
CN101675375B (zh) * 2007-07-13 2011-08-17 夏普株式会社 液晶显示装置和其驱动方法
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JP5439723B2 (ja) * 2008-01-22 2014-03-12 セイコーエプソン株式会社 薄膜トランジスタ、マトリクス基板、電気泳動表示装置および電子機器
TWI409537B (zh) 2008-04-03 2013-09-21 Innolux Corp 液晶面板及採用該液晶面板之液晶顯示裝置
CN101556395B (zh) * 2008-04-09 2011-02-16 群康科技(深圳)有限公司 液晶面板和液晶显示器
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JP2016029719A (ja) * 2014-07-17 2016-03-03 出光興産株式会社 薄膜トランジスタ
KR102223678B1 (ko) 2014-07-25 2021-03-08 삼성디스플레이 주식회사 표시장치용 백플레인 및 그 제조 방법
JP6662665B2 (ja) 2015-03-19 2020-03-11 株式会社半導体エネルギー研究所 液晶表示装置及び該液晶表示装置を用いた電子機器
KR102483953B1 (ko) * 2015-10-16 2023-01-03 삼성디스플레이 주식회사 박막트랜지스터 기판 및 이를 구비한 유기 발광 표시 장치
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KR102669704B1 (ko) * 2018-12-04 2024-05-28 삼성디스플레이 주식회사 표시 모듈 및 이를 포함한 표시 장치 제조 방법
KR102688295B1 (ko) * 2019-07-22 2024-07-25 엘지디스플레이 주식회사 디스플레이 패널 및 디스플레이 장치
CN110649101B (zh) * 2019-10-18 2022-04-15 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
WO2025137806A1 (zh) * 2023-12-25 2025-07-03 京东方科技集团股份有限公司 显示基板、显示面板、显示装置和背光调节方法

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Also Published As

Publication number Publication date
US7821006B2 (en) 2010-10-26
KR20070009906A (ko) 2007-01-19
US20070013823A1 (en) 2007-01-18
TWI406417B (zh) 2013-08-21
CN1897309B (zh) 2011-02-09
CN1897309A (zh) 2007-01-17
US20110013113A1 (en) 2011-01-20
TW200709428A (en) 2007-03-01
US8541811B2 (en) 2013-09-24
JP2007027704A (ja) 2007-02-01

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