KR101197836B1 - 레벨 시프팅 회로 및 방법 - Google Patents

레벨 시프팅 회로 및 방법 Download PDF

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Publication number
KR101197836B1
KR101197836B1 KR1020107019370A KR20107019370A KR101197836B1 KR 101197836 B1 KR101197836 B1 KR 101197836B1 KR 1020107019370 A KR1020107019370 A KR 1020107019370A KR 20107019370 A KR20107019370 A KR 20107019370A KR 101197836 B1 KR101197836 B1 KR 101197836B1
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KR
South Korea
Prior art keywords
voltage
input
state holding
output
weak state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020107019370A
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English (en)
Korean (ko)
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KR20100107068A (ko
Inventor
난 첸
리투 차바
Original Assignee
콸콤 인코포레이티드
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Application filed by 콸콤 인코포레이티드 filed Critical 콸콤 인코포레이티드
Publication of KR20100107068A publication Critical patent/KR20100107068A/ko
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Publication of KR101197836B1 publication Critical patent/KR101197836B1/ko
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H03K19/018528—Interface arrangements of complementary type, e.g. CMOS with at least one differential stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
KR1020107019370A 2008-01-31 2009-01-28 레벨 시프팅 회로 및 방법 Expired - Fee Related KR101197836B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/023,276 US7884645B2 (en) 2008-01-31 2008-01-31 Voltage level shifting circuit and method
US12/023,276 2008-01-31
PCT/US2009/032203 WO2009097315A1 (en) 2008-01-31 2009-01-28 Level shifting circuit and method

Publications (2)

Publication Number Publication Date
KR20100107068A KR20100107068A (ko) 2010-10-04
KR101197836B1 true KR101197836B1 (ko) 2012-11-05

Family

ID=40451170

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019370A Expired - Fee Related KR101197836B1 (ko) 2008-01-31 2009-01-28 레벨 시프팅 회로 및 방법

Country Status (6)

Country Link
US (1) US7884645B2 (enExample)
EP (1) EP2248260A1 (enExample)
JP (1) JP5215415B2 (enExample)
KR (1) KR101197836B1 (enExample)
CN (1) CN101965684A (enExample)
WO (1) WO2009097315A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525572B2 (en) * 2011-02-15 2013-09-03 Cavium, Inc. Level-up shifter circuit
US8896360B2 (en) 2011-02-15 2014-11-25 Cavium, Inc. Level-up shifter circuit for high speed and low power applications
US9461624B2 (en) * 2014-11-17 2016-10-04 Infineon Technologies Ag Output driver slew control
US11223359B2 (en) * 2016-03-31 2022-01-11 Qualcomm Incorporated Power efficient voltage level translator circuit
US10050624B2 (en) 2016-05-18 2018-08-14 Cavium, Inc. Process-compensated level-up shifter circuit
KR102534821B1 (ko) * 2016-10-31 2023-05-22 에스케이하이닉스 주식회사 전원 제어장치 및 이를 포함하는 반도체 메모리 장치
US9997208B1 (en) * 2017-03-29 2018-06-12 Qualcomm Incorporated High-speed level shifter
US9762238B1 (en) * 2017-04-03 2017-09-12 Nxp Usa, Inc. Systems and methods for supplying reference voltage to multiple die of different technologies in a package
US11152937B2 (en) * 2019-05-31 2021-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Level shifter
CN110601690B (zh) * 2019-10-10 2024-10-01 无锡安趋电子有限公司 一种低工作电压的快速下行电平移位电路
US11031054B1 (en) * 2020-01-22 2021-06-08 Micron Technology, Inc. Apparatuses and methods for pre-emphasis control
US11437997B1 (en) * 2021-09-30 2022-09-06 Texas Instruments Incorporated Level shifter circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040246038A1 (en) * 2003-06-09 2004-12-09 International Business Machines Corp Level shift circuitry having delay boost

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039862A (en) * 1976-01-19 1977-08-02 Rca Corporation Level shift circuit
JPH04192622A (ja) * 1990-11-22 1992-07-10 Nec Corp 半導体集積回路
JPH06243680A (ja) * 1993-02-22 1994-09-02 Mitsubishi Electric Corp 信号レベル変換回路
JPH07254275A (ja) * 1994-01-31 1995-10-03 Toshiba Corp 半導体記憶装置
US6002290A (en) * 1997-12-23 1999-12-14 Sarnoff Corporation Crisscross voltage level shifter
US6445210B2 (en) 2000-02-10 2002-09-03 Matsushita Electric Industrial Co., Ltd. Level shifter
JP3477448B2 (ja) * 2000-02-10 2003-12-10 松下電器産業株式会社 レベルシフト回路
US20070164789A1 (en) 2006-01-17 2007-07-19 Cypress Semiconductor Corp. High Speed Level Shift Circuit with Reduced Skew and Method for Level Shifting
US20070188194A1 (en) 2006-02-15 2007-08-16 Samsung Electronics Co: Ltd. Level shifter circuit and method thereof
JP2007259005A (ja) * 2006-03-23 2007-10-04 Renesas Technology Corp 半導体集積回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040246038A1 (en) * 2003-06-09 2004-12-09 International Business Machines Corp Level shift circuitry having delay boost

Also Published As

Publication number Publication date
JP5215415B2 (ja) 2013-06-19
KR20100107068A (ko) 2010-10-04
WO2009097315A1 (en) 2009-08-06
US20090195268A1 (en) 2009-08-06
US7884645B2 (en) 2011-02-08
EP2248260A1 (en) 2010-11-10
JP2011511567A (ja) 2011-04-07
CN101965684A (zh) 2011-02-02

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