JP5215415B2 - レベルシフティング回路および方法 - Google Patents

レベルシフティング回路および方法 Download PDF

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Publication number
JP5215415B2
JP5215415B2 JP2010545100A JP2010545100A JP5215415B2 JP 5215415 B2 JP5215415 B2 JP 5215415B2 JP 2010545100 A JP2010545100 A JP 2010545100A JP 2010545100 A JP2010545100 A JP 2010545100A JP 5215415 B2 JP5215415 B2 JP 5215415B2
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JP
Japan
Prior art keywords
voltage
input
path
coupled
output
Prior art date
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Expired - Fee Related
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JP2010545100A
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English (en)
Japanese (ja)
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JP2011511567A5 (enExample
JP2011511567A (ja
Inventor
チェン、ナン
チャバ、リツ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
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Qualcomm Inc
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Publication date
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Publication of JP2011511567A publication Critical patent/JP2011511567A/ja
Publication of JP2011511567A5 publication Critical patent/JP2011511567A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H03K19/018528—Interface arrangements of complementary type, e.g. CMOS with at least one differential stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
JP2010545100A 2008-01-31 2009-01-28 レベルシフティング回路および方法 Expired - Fee Related JP5215415B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/023,276 US7884645B2 (en) 2008-01-31 2008-01-31 Voltage level shifting circuit and method
US12/023,276 2008-01-31
PCT/US2009/032203 WO2009097315A1 (en) 2008-01-31 2009-01-28 Level shifting circuit and method

Publications (3)

Publication Number Publication Date
JP2011511567A JP2011511567A (ja) 2011-04-07
JP2011511567A5 JP2011511567A5 (enExample) 2012-05-31
JP5215415B2 true JP5215415B2 (ja) 2013-06-19

Family

ID=40451170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010545100A Expired - Fee Related JP5215415B2 (ja) 2008-01-31 2009-01-28 レベルシフティング回路および方法

Country Status (6)

Country Link
US (1) US7884645B2 (enExample)
EP (1) EP2248260A1 (enExample)
JP (1) JP5215415B2 (enExample)
KR (1) KR101197836B1 (enExample)
CN (1) CN101965684A (enExample)
WO (1) WO2009097315A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525572B2 (en) * 2011-02-15 2013-09-03 Cavium, Inc. Level-up shifter circuit
US8896360B2 (en) 2011-02-15 2014-11-25 Cavium, Inc. Level-up shifter circuit for high speed and low power applications
US9461624B2 (en) * 2014-11-17 2016-10-04 Infineon Technologies Ag Output driver slew control
US11223359B2 (en) * 2016-03-31 2022-01-11 Qualcomm Incorporated Power efficient voltage level translator circuit
US10050624B2 (en) 2016-05-18 2018-08-14 Cavium, Inc. Process-compensated level-up shifter circuit
KR102534821B1 (ko) * 2016-10-31 2023-05-22 에스케이하이닉스 주식회사 전원 제어장치 및 이를 포함하는 반도체 메모리 장치
US9997208B1 (en) * 2017-03-29 2018-06-12 Qualcomm Incorporated High-speed level shifter
US9762238B1 (en) * 2017-04-03 2017-09-12 Nxp Usa, Inc. Systems and methods for supplying reference voltage to multiple die of different technologies in a package
US11152937B2 (en) * 2019-05-31 2021-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Level shifter
CN110601690B (zh) * 2019-10-10 2024-10-01 无锡安趋电子有限公司 一种低工作电压的快速下行电平移位电路
US11031054B1 (en) * 2020-01-22 2021-06-08 Micron Technology, Inc. Apparatuses and methods for pre-emphasis control
US11437997B1 (en) * 2021-09-30 2022-09-06 Texas Instruments Incorporated Level shifter circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039862A (en) * 1976-01-19 1977-08-02 Rca Corporation Level shift circuit
JPH04192622A (ja) * 1990-11-22 1992-07-10 Nec Corp 半導体集積回路
JPH06243680A (ja) * 1993-02-22 1994-09-02 Mitsubishi Electric Corp 信号レベル変換回路
JPH07254275A (ja) * 1994-01-31 1995-10-03 Toshiba Corp 半導体記憶装置
US6002290A (en) * 1997-12-23 1999-12-14 Sarnoff Corporation Crisscross voltage level shifter
US6445210B2 (en) 2000-02-10 2002-09-03 Matsushita Electric Industrial Co., Ltd. Level shifter
JP3477448B2 (ja) * 2000-02-10 2003-12-10 松下電器産業株式会社 レベルシフト回路
US6853234B2 (en) * 2003-06-09 2005-02-08 International Business Machines Corporation Level shift circuitry having delay boost
US20070164789A1 (en) 2006-01-17 2007-07-19 Cypress Semiconductor Corp. High Speed Level Shift Circuit with Reduced Skew and Method for Level Shifting
US20070188194A1 (en) 2006-02-15 2007-08-16 Samsung Electronics Co: Ltd. Level shifter circuit and method thereof
JP2007259005A (ja) * 2006-03-23 2007-10-04 Renesas Technology Corp 半導体集積回路

Also Published As

Publication number Publication date
KR20100107068A (ko) 2010-10-04
WO2009097315A1 (en) 2009-08-06
KR101197836B1 (ko) 2012-11-05
US20090195268A1 (en) 2009-08-06
US7884645B2 (en) 2011-02-08
EP2248260A1 (en) 2010-11-10
JP2011511567A (ja) 2011-04-07
CN101965684A (zh) 2011-02-02

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