KR101171504B1 - 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법 - Google Patents

다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법 Download PDF

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KR101171504B1
KR101171504B1 KR1020100048480A KR20100048480A KR101171504B1 KR 101171504 B1 KR101171504 B1 KR 101171504B1 KR 1020100048480 A KR1020100048480 A KR 1020100048480A KR 20100048480 A KR20100048480 A KR 20100048480A KR 101171504 B1 KR101171504 B1 KR 101171504B1
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South Korea
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semi
transmissive portion
film
transmissive
exposure light
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KR20100127718A (ko
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노보루 야마구찌
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020100048480A 2009-05-26 2010-05-25 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법 Active KR101171504B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009127039A JP2010276724A (ja) 2009-05-26 2009-05-26 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法
JPJP-P-2009-127039 2009-05-26

Publications (2)

Publication Number Publication Date
KR20100127718A KR20100127718A (ko) 2010-12-06
KR101171504B1 true KR101171504B1 (ko) 2012-08-06

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KR1020100048480A Active KR101171504B1 (ko) 2009-05-26 2010-05-25 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법

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JP (1) JP2010276724A (https=)
KR (1) KR101171504B1 (https=)
CN (1) CN101900932B (https=)
TW (1) TWI461837B (https=)

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CN102426411A (zh) * 2011-07-01 2012-04-25 上海华力微电子有限公司 一种保护掩模板的方法
KR101624436B1 (ko) * 2011-12-21 2016-05-25 다이니폰 인사츠 가부시키가이샤 대형 위상 시프트 마스크 및 대형 위상 시프트 마스크의 제조 방법
CN102707575B (zh) * 2012-05-18 2015-02-25 北京京东方光电科技有限公司 掩模板及制造阵列基板的方法
JP5635577B2 (ja) * 2012-09-26 2014-12-03 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6157832B2 (ja) * 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
KR102170761B1 (ko) 2013-07-22 2020-10-27 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP6586344B2 (ja) * 2015-10-20 2019-10-02 Hoya株式会社 フォトマスクの製造方法、フォトマスク、および、表示装置の製造方法
JP6259509B1 (ja) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
KR20210016814A (ko) * 2019-08-05 2021-02-17 주식회사 포트로닉스 천안 3-톤 이상의 마스크 제조 방법
JP7570255B2 (ja) * 2021-03-04 2024-10-21 株式会社エスケーエレクトロニクス 多階調フォトマスクの製造方法及び多階調フォトマスク
CN113249699B (zh) * 2021-05-13 2022-11-04 沈阳仪表科学研究院有限公司 基于磁控溅射技术制备高精密波长渐变滤光片的方法及其采用的装置
JP7835625B2 (ja) * 2022-06-15 2026-03-25 Hoya株式会社 転写用マスク、および、表示装置の製造方法
CN119861525B (zh) * 2025-01-20 2025-10-28 信利(仁寿)高端显示科技有限公司 一种使用渐进式曝光机的新型掩膜制作方法及系统

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JP2002365784A (ja) 2001-06-05 2002-12-18 Sony Corp 多階調マスク、レジストパターンの形成方法、及び光学素子の製造方法

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US5935736A (en) * 1997-10-24 1999-08-10 Taiwan Semiconductors Manufacturing Company Ltd. Mask and method to eliminate side-lobe effects in attenuated phase shifting masks
TW363147B (en) * 1997-11-22 1999-07-01 United Microelectronics Corp Phase shifting mask
JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
EP1668413A2 (en) * 2003-09-05 2006-06-14 Schott AG Phase shift mask blank with increased uniformity
JP4446395B2 (ja) * 2006-02-02 2010-04-07 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法、及びグレートーンマスク
JP4570632B2 (ja) * 2006-02-20 2010-10-27 Ｈｏｙａ株式会社 ４階調フォトマスクの製造方法、及びフォトマスクブランク加工品
KR101255616B1 (ko) * 2006-07-28 2013-04-16 삼성디스플레이 주식회사 다중톤 광마스크, 이의 제조방법 및 이를 이용한박막트랜지스터 기판의 제조방법
TWI422962B (zh) * 2006-12-05 2014-01-11 Hoya Corp 灰階光罩之檢查方法、液晶裝置製造用灰階光罩之製造方法以及圖案轉印方法
JP5036328B2 (ja) * 2007-01-24 2012-09-26 Ｈｏｙａ株式会社 グレートーンマスク及びパターン転写方法
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JP5057866B2 (ja) * 2007-07-03 2012-10-24 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
KR20090009618A (ko) * 2007-07-20 2009-01-23 엘지디스플레이 주식회사 3톤 노광 마스크
KR20090044513A (ko) * 2007-10-31 2009-05-07 주식회사 에스앤에스텍 그레이톤 블랭크 마스크 및 그레이톤 포토마스크의제조방법
JP5319193B2 (ja) * 2008-07-28 2013-10-16 Ｈｏｙａ株式会社 液晶表示装置製造用多階調フォトマスク、液晶表示装置製造用多階調フォトマスクの製造方法及びパターン転写方法

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Publication number Publication date
JP2010276724A (ja) 2010-12-09
TW201104353A (en) 2011-02-01
KR20100127718A (ko) 2010-12-06
CN101900932B (zh) 2012-06-06
TWI461837B (zh) 2014-11-21
CN101900932A (zh) 2010-12-01

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