KR101163162B1 - 비휘발성 저장소자를 위한 가변 프로그램 - Google Patents

비휘발성 저장소자를 위한 가변 프로그램 Download PDF

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Publication number
KR101163162B1
KR101163162B1 KR1020107017595A KR20107017595A KR101163162B1 KR 101163162 B1 KR101163162 B1 KR 101163162B1 KR 1020107017595 A KR1020107017595 A KR 1020107017595A KR 20107017595 A KR20107017595 A KR 20107017595A KR 101163162 B1 KR101163162 B1 KR 101163162B1
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South Korea
Prior art keywords
programming
data
programming process
memory cells
pulses
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KR1020107017595A
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English (en)
Korean (ko)
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KR20100101694A (ko
Inventor
니마 모크레시
Original Assignee
샌디스크 테크놀로지스, 인코포레이티드
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Priority claimed from US11/694,992 external-priority patent/US7619930B2/en
Application filed by 샌디스크 테크놀로지스, 인코포레이티드 filed Critical 샌디스크 테크놀로지스, 인코포레이티드
Publication of KR20100101694A publication Critical patent/KR20100101694A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR1020107017595A 2007-02-20 2008-02-13 비휘발성 저장소자를 위한 가변 프로그램 Expired - Fee Related KR101163162B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US89083207P 2007-02-20 2007-02-20
US60/890,832 2007-02-20
US69499307A 2007-03-31 2007-03-31
US11/694,993 2007-03-31
US11/694,992 US7619930B2 (en) 2007-02-20 2007-03-31 Dynamic verify based on threshold voltage distribution
US11/694,992 2007-03-31
PCT/US2008/053858 WO2008103586A1 (en) 2007-02-20 2008-02-13 Dynamic verify based on threshold voltage distribution

Related Parent Applications (1)

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KR1020097019391A Division KR101147522B1 (ko) 2007-02-20 2008-02-13 임계전압 분포에 기반한 동적 검증

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Publication Number Publication Date
KR20100101694A KR20100101694A (ko) 2010-09-17
KR101163162B1 true KR101163162B1 (ko) 2012-07-06

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KR1020107017595A Expired - Fee Related KR101163162B1 (ko) 2007-02-20 2008-02-13 비휘발성 저장소자를 위한 가변 프로그램
KR1020097019391A Active KR101147522B1 (ko) 2007-02-20 2008-02-13 임계전압 분포에 기반한 동적 검증

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EP (3) EP2348511B1 (enExample)
JP (2) JP5113195B2 (enExample)
KR (2) KR101163162B1 (enExample)
CN (2) CN102005244B (enExample)
TW (1) TWI374446B (enExample)
WO (1) WO2008103586A1 (enExample)

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US7839690B2 (en) * 2008-12-11 2010-11-23 Sandisk Corporation Adaptive erase and soft programming for memory
KR101616097B1 (ko) * 2009-11-11 2016-04-28 삼성전자주식회사 불휘발성 메모리 장치의 프로그램 방법
US8351276B2 (en) * 2010-07-13 2013-01-08 Freescale Semiconductor, Inc. Soft program of a non-volatile memory block
US8374031B2 (en) 2010-09-29 2013-02-12 SanDisk Technologies, Inc. Techniques for the fast settling of word lines in NAND flash memory
US9293194B2 (en) 2011-01-27 2016-03-22 Apple Inc. Programming and erasure schemes for analog memory cells
US9009547B2 (en) 2011-01-27 2015-04-14 Apple Inc. Advanced programming verification schemes for analog memory cells
JP5598363B2 (ja) * 2011-02-15 2014-10-01 ソニー株式会社 記憶装置およびその動作方法
US8811075B2 (en) 2012-01-06 2014-08-19 Sandisk Technologies Inc. Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
JP6001093B2 (ja) * 2012-01-24 2016-10-05 アップル インコーポレイテッド アナログメモリセルのプログラミング及び消去の方式
WO2013112332A1 (en) 2012-01-24 2013-08-01 Apple Inc. Enhanced programming and erasure schemes for analog memory cells
US8681569B2 (en) * 2012-02-22 2014-03-25 Silicon Motion, Inc. Method for reading data stored in a flash memory according to a threshold voltage distribution and memory controller and system thereof
KR101938659B1 (ko) 2012-02-29 2019-01-15 삼성전자주식회사 불 휘발성 메모리 장치 및 그것을 포함한 메모리 시스템
CN108595345B (zh) * 2012-07-25 2021-11-23 慧荣科技股份有限公司 管理闪存中所储存的数据的方法及相关记忆装置与控制器
JP2014053060A (ja) 2012-09-07 2014-03-20 Toshiba Corp 半導体記憶装置及びその制御方法
JP2014059930A (ja) * 2012-09-18 2014-04-03 Toshiba Corp 不揮発性半導体記憶装置
JP2014063551A (ja) 2012-09-21 2014-04-10 Toshiba Corp 半導体記憶装置
US9455029B2 (en) * 2014-05-23 2016-09-27 Micron Technology, Inc. Threshold voltage analysis
US9595317B2 (en) * 2015-05-28 2017-03-14 Sandisk Technologies Llc Multi-state programming for non-volatile memory
TWI604449B (zh) * 2016-08-31 2017-11-01 旺宏電子股份有限公司 記憶體裝置與其程式化方法
US10607693B2 (en) * 2018-06-29 2020-03-31 Micron Technology, Inc. Misplacement mitigation algorithm
US11270771B2 (en) * 2019-01-29 2022-03-08 Silicon Storage Technology, Inc. Neural network classifier using array of stacked gate non-volatile memory cells
JP2022520372A (ja) * 2019-10-29 2022-03-30 長江存儲科技有限責任公司 メモリデバイスのプログラミング方法、およびメモリデバイス

Citations (1)

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US20020024846A1 (en) 1996-09-30 2002-02-28 Takayuki Kawahara Semiconductor integrated circuit and data processing system

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Also Published As

Publication number Publication date
KR20100024913A (ko) 2010-03-08
TW200849247A (en) 2008-12-16
TWI374446B (en) 2012-10-11
EP2122627B1 (en) 2013-01-30
CN101689400A (zh) 2010-03-31
CN101689400B (zh) 2013-07-03
EP2348511A1 (en) 2011-07-27
JP5113195B2 (ja) 2013-01-09
KR101147522B1 (ko) 2012-05-21
CN102005244A (zh) 2011-04-06
EP2122627A1 (en) 2009-11-25
JP5410390B2 (ja) 2014-02-05
JP2011008913A (ja) 2011-01-13
CN102005244B (zh) 2015-10-21
JP2010519673A (ja) 2010-06-03
EP2458592A3 (en) 2012-08-15
EP2458592B1 (en) 2014-03-26
WO2008103586A1 (en) 2008-08-28
KR20100101694A (ko) 2010-09-17
EP2348511B1 (en) 2014-08-13
EP2458592A2 (en) 2012-05-30

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