KR101161886B1 - 파손 분석 방법 및 시스템 - Google Patents

파손 분석 방법 및 시스템 Download PDF

Info

Publication number
KR101161886B1
KR101161886B1 KR1020067000841A KR20067000841A KR101161886B1 KR 101161886 B1 KR101161886 B1 KR 101161886B1 KR 1020067000841 A KR1020067000841 A KR 1020067000841A KR 20067000841 A KR20067000841 A KR 20067000841A KR 101161886 B1 KR101161886 B1 KR 101161886B1
Authority
KR
South Korea
Prior art keywords
laser beam
integrated circuit
laser
pattern
encapsulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067000841A
Other languages
English (en)
Korean (ko)
Other versions
KR20060054309A (ko
Inventor
그레고리 비. 앤더슨
Original Assignee
컨트롤 시스테메이션, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34102724&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101161886(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 컨트롤 시스테메이션, 인크. filed Critical 컨트롤 시스테메이션, 인크.
Publication of KR20060054309A publication Critical patent/KR20060054309A/ko
Application granted granted Critical
Publication of KR101161886B1 publication Critical patent/KR101161886B1/ko
Assigned to 컨트롤 레이저 코포레이션 reassignment 컨트롤 레이저 코포레이션 권리의 전부이전등록 Assignors: 컨트롤 시스테메이션, 인크.
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • B23K26/032Observing, e.g. monitoring, the workpiece using optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/082Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2898Sample preparation, e.g. removing encapsulation, etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/30Organic materials
    • B23K2103/42Plastics other than composite materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic materials other than metals or composite materials
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/308Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Laser Beam Processing (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020067000841A 2003-07-15 2004-07-15 파손 분석 방법 및 시스템 Expired - Fee Related KR101161886B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US48787003P 2003-07-15 2003-07-15
US60/487,870 2003-07-15
PCT/US2004/023232 WO2005010945A2 (en) 2003-07-15 2004-07-15 Failure analysis methods and systems

Publications (2)

Publication Number Publication Date
KR20060054309A KR20060054309A (ko) 2006-05-22
KR101161886B1 true KR101161886B1 (ko) 2012-07-11

Family

ID=34102724

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067000841A Expired - Fee Related KR101161886B1 (ko) 2003-07-15 2004-07-15 파손 분석 방법 및 시스템

Country Status (7)

Country Link
US (1) US7271012B2 (https=)
EP (1) EP1652221A4 (https=)
JP (2) JP4843488B2 (https=)
KR (1) KR101161886B1 (https=)
CN (1) CN100418195C (https=)
CA (1) CA2532959C (https=)
WO (1) WO2005010945A2 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335208B1 (en) 1999-05-10 2002-01-01 Intersil Americas Inc. Laser decapsulation method
US7705267B2 (en) * 2005-06-30 2010-04-27 Jon Heyl Semiconductor failure analysis tool
JP4958507B2 (ja) * 2006-09-15 2012-06-20 株式会社キーエンス レーザ加工装置
US20110089152A1 (en) * 2009-10-16 2011-04-21 Control Systemation, Inc. Method and system for exposing delicate structures of a device encapsulated in a mold compound
CN102658423A (zh) * 2010-07-30 2012-09-12 高洪波 智能化视觉定位+激光束同轴高精度实时激光加工系统
US20130153552A1 (en) * 2011-12-14 2013-06-20 Gwangju Institute Of Science And Technology Scribing apparatus and method for having analysis function of material distribution
JP5574354B2 (ja) * 2012-03-09 2014-08-20 株式会社トヨコー 塗膜除去方法及びレーザー塗膜除去装置
CN104275552A (zh) * 2013-07-10 2015-01-14 苏州矽微电子科技有限公司 激光器去除集成电路塑封膜的用途
US10923689B2 (en) 2018-01-25 2021-02-16 OLEDWorks LLC Method for mask-free OLED deposition and manufacture
US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
IT201900006740A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di strutturazione di substrati
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US20210107094A1 (en) * 2019-10-14 2021-04-15 Haesung Ds Co., Ltd. Apparatus for and method of polishing surface of substrate
US11069537B2 (en) * 2019-10-18 2021-07-20 Hamilton Sundstrand Corporation Method for delidding a hermetically sealed circuit package
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
EP4094289A1 (en) 2020-01-24 2022-11-30 3M Innovative Properties Company Electrical connections to embedded electronic components
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
US11232951B1 (en) 2020-07-14 2022-01-25 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
WO2022186767A1 (en) * 2021-03-03 2022-09-09 Lim Meng Keong An integrated x-ray imaging and laser ablating system for precision micromachining
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
US12183684B2 (en) 2021-10-26 2024-12-31 Applied Materials, Inc. Semiconductor device packaging methods
US12487417B2 (en) 2022-10-04 2025-12-02 Applied Materials, Inc. Photonic glass layer substrate with embedded optical structures for communicating with an electro optical integrated circuit
US12345934B2 (en) 2022-10-04 2025-07-01 Applied Materials, Inc. Methods for fabrication of optical structures on photonic glass layer substrates

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001071167A (ja) * 1999-09-06 2001-03-21 Sumitomo Heavy Ind Ltd レーザ加工方法及び加工装置
JP2003045921A (ja) * 2001-07-11 2003-02-14 Data Storage Inst 集積回路パッケージの封止除去方法および封止除去装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182230A (en) * 1988-07-25 1993-01-26 International Business Machines Corporation Laser methods for circuit repair on integrated circuits and substrates
JPH04237589A (ja) * 1991-01-21 1992-08-26 Nec Corp レーザ加工装置
JPH05243296A (ja) * 1992-02-27 1993-09-21 Nippon Denki Laser Kiki Eng Kk Icリードのモールド材除去方法
JPH0870144A (ja) * 1994-08-26 1996-03-12 Sumitomo Electric Ind Ltd 超電導部品の作製方法
DE4439714C2 (de) * 1994-11-09 1997-11-06 Fraunhofer Ges Forschung Verfahren zum Markieren, wie Kennzeichnen und/oder Beschriften, von Produkten in einem Fertigungsablauf unter Verwendung von Laserstrahlung
FR2731637B1 (fr) * 1995-03-16 1997-05-16 Aerospatiale Procede et appareil pour eliminer, par photo-ablation, de la matiere d'une masse polymere
US5937270A (en) * 1996-01-24 1999-08-10 Micron Electronics, Inc. Method of efficiently laser marking singulated semiconductor devices
US5986234A (en) * 1997-03-28 1999-11-16 The Regents Of The University Of California High removal rate laser-based coating removal system
CN1205544A (zh) * 1997-06-26 1999-01-20 日本电气株式会社 半导体集成电路的故障分析装置及其方法
US6392683B1 (en) * 1997-09-26 2002-05-21 Sumitomo Heavy Industries, Ltd. Method for making marks in a transparent material by using a laser
JP3511359B2 (ja) * 1998-02-27 2004-03-29 三菱電機株式会社 レーザ加工装置
JPH11254270A (ja) * 1998-03-04 1999-09-21 Canon Inc 封止体の開封装置および封止体の開封方法
JP2000021912A (ja) * 1998-06-30 2000-01-21 Seiko Epson Corp 半導体パッケージの樹脂開封方法
EP1116165A2 (de) * 1998-08-31 2001-07-18 Siemens Aktiengesellschaft Verfahren zur herstellung metallischer feinstrukturen und anwendung des verfahrens bei der herstellung von sensoranordnungen zur erfassung von fingerabdrücken
US6710284B1 (en) * 1999-02-26 2004-03-23 Micron Technology, Inc. Laser marking techniques for bare semiconductor die
US6414320B1 (en) * 1999-05-03 2002-07-02 The Regents Of The University Of California Composition analysis by scanning femtosecond laser ultraprobing (CASFLU).
US6335208B1 (en) * 1999-05-10 2002-01-01 Intersil Americas Inc. Laser decapsulation method
JP3715843B2 (ja) * 1999-08-16 2005-11-16 キヤノン株式会社 樹脂封止体の開封装置及びその開封方法
FR2797956B1 (fr) * 1999-08-26 2001-11-30 Univ Metz Dispositif de detection et d'analyse par ablation laser et transfert vers une trappe ionique d'un spectrometre, procede mettant en oeuvre ce dispositif et utilisations particulieres du procede
AU7101000A (en) * 1999-09-10 2001-04-10 Caliper Technologies Corporation Microfabrication methods and devices
US6887804B2 (en) * 2000-01-10 2005-05-03 Electro Scientific Industries, Inc. Passivation processing over a memory link
JP2001219289A (ja) * 2000-02-09 2001-08-14 Nec Corp レーザマーカ装置およびレーザマーカ方法
US6586707B2 (en) * 2000-10-26 2003-07-01 Xsil Technology Limited Control of laser machining
US6875950B2 (en) * 2002-03-22 2005-04-05 Gsi Lumonics Corporation Automated laser trimming of resistors
US9022037B2 (en) * 2003-08-11 2015-05-05 Raydiance, Inc. Laser ablation method and apparatus having a feedback loop and control unit
US7528342B2 (en) * 2005-02-03 2009-05-05 Laserfacturing, Inc. Method and apparatus for via drilling and selective material removal using an ultrafast pulse laser
US20070012665A1 (en) * 2005-07-12 2007-01-18 Hewlett-Packard Development Company Lp Laser ablation
AU2006299612A1 (en) * 2005-10-03 2007-04-12 Aradigm Corporation Method and system for laser machining

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001071167A (ja) * 1999-09-06 2001-03-21 Sumitomo Heavy Ind Ltd レーザ加工方法及び加工装置
JP2003045921A (ja) * 2001-07-11 2003-02-14 Data Storage Inst 集積回路パッケージの封止除去方法および封止除去装置

Also Published As

Publication number Publication date
JP2010142878A (ja) 2010-07-01
WO2005010945A3 (en) 2006-01-05
KR20060054309A (ko) 2006-05-22
JP2007534930A (ja) 2007-11-29
CA2532959C (en) 2014-09-16
EP1652221A2 (en) 2006-05-03
WO2005010945A2 (en) 2005-02-03
US20050064682A1 (en) 2005-03-24
JP4843488B2 (ja) 2011-12-21
CN1836314A (zh) 2006-09-20
US7271012B2 (en) 2007-09-18
CA2532959A1 (en) 2005-02-03
EP1652221A4 (en) 2007-10-17
CN100418195C (zh) 2008-09-10

Similar Documents

Publication Publication Date Title
KR101161886B1 (ko) 파손 분석 방법 및 시스템
US7705267B2 (en) Semiconductor failure analysis tool
TWI242792B (en) Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
US7829439B2 (en) Laser beam processing method for making a semiconductor device
US6878900B2 (en) Method and apparatus for repair of defects in materials with short laser pulses
CN1577755B (zh) 激光束处理方法和激光束处理装置
US11633872B2 (en) Processing apparatus
CN106449597A (zh) 检查用晶片和检查用晶片的使用方法
EP1276142A2 (en) Method and apparatus for decapping integrated circuit packages
CN105382420A (zh) 激光加工装置
US8198137B2 (en) Lead frame isolation using laser technology
CN113871313B (zh) 芯片的检测系统及检测方法
May et al. Correlative multimodal imaging and targeted lasering for automated high-precision IC decapsulation
JP2010040727A (ja) 板状物の分割方法
Schwindenhammer et al. Microelectronics failure analysis using laser ablation of composite materials in system in package
Klengel et al. A New, Efficient Method for Preparation of 3D Integrated Systems by Laser Techniques
JP4827490B2 (ja) 半導体装置の製造システム
Frazier et al. Laser-based sample preparation for electronic package failure analysis
JP2004273507A (ja) ワイヤボンディング装置
CN117871344A (zh) 一种失效分析的方法以及系统装置
JP2023065042A (ja) 検出装置
JP2022121145A (ja) 光学ユニット、分岐ユニット及びレーザー加工装置
Glynn et al. Laser soldering of surface mount components and memory chips
JP2001313273A (ja) 半導体機械加工方法、半導体機械加工装置、および半導体装置の製造方法
CN105855724A (zh) 激光加工装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20150702

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160627

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160627

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000