KR101160102B1 - 가스 화학물 및 탄화 수소 첨가의 주기적 조절을 이용하는 플라즈마 스트리핑 방법 - Google Patents

가스 화학물 및 탄화 수소 첨가의 주기적 조절을 이용하는 플라즈마 스트리핑 방법 Download PDF

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KR101160102B1
KR101160102B1 KR1020067027757A KR20067027757A KR101160102B1 KR 101160102 B1 KR101160102 B1 KR 101160102B1 KR 1020067027757 A KR1020067027757 A KR 1020067027757A KR 20067027757 A KR20067027757 A KR 20067027757A KR 101160102 B1 KR101160102 B1 KR 101160102B1
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gas
phase
protective layer
stripping
etching
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KR20070032967A (ko
Inventor
석민 윤
지 주
피터 치리글리아노
상헌 이
토마스 에스 최
피터 로웬하트
마크 에이치 윌콕슨
레자 사드자디
에릭 에이 허드슨
제임스 브이 티에츠
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020067027757A 2004-06-03 2005-05-27 가스 화학물 및 탄화 수소 첨가의 주기적 조절을 이용하는 플라즈마 스트리핑 방법 Expired - Lifetime KR101160102B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/860,833 2004-06-03
US10/860,833 US7294580B2 (en) 2003-04-09 2004-06-03 Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
PCT/US2005/018784 WO2005122226A1 (en) 2004-06-03 2005-05-27 Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition

Publications (2)

Publication Number Publication Date
KR20070032967A KR20070032967A (ko) 2007-03-23
KR101160102B1 true KR101160102B1 (ko) 2012-06-26

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KR1020067027757A Expired - Lifetime KR101160102B1 (ko) 2004-06-03 2005-05-27 가스 화학물 및 탄화 수소 첨가의 주기적 조절을 이용하는 플라즈마 스트리핑 방법

Country Status (8)

Country Link
US (1) US7294580B2 (https=)
EP (1) EP1754252A1 (https=)
JP (1) JP4971978B2 (https=)
KR (1) KR101160102B1 (https=)
CN (1) CN100524646C (https=)
IL (1) IL179695A (https=)
TW (1) TWI400749B (https=)
WO (1) WO2005122226A1 (https=)

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Also Published As

Publication number Publication date
TW200614357A (en) 2006-05-01
US20040224520A1 (en) 2004-11-11
EP1754252A1 (en) 2007-02-21
TWI400749B (zh) 2013-07-01
KR20070032967A (ko) 2007-03-23
CN100524646C (zh) 2009-08-05
JP2008502146A (ja) 2008-01-24
JP4971978B2 (ja) 2012-07-11
US7294580B2 (en) 2007-11-13
WO2005122226A1 (en) 2005-12-22
IL179695A (en) 2011-08-31
CN1993811A (zh) 2007-07-04
IL179695A0 (en) 2007-05-15

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