KR101127355B1 - 포토마스크 및 그 제조 방법과 패턴 전사 방법 - Google Patents
포토마스크 및 그 제조 방법과 패턴 전사 방법 Download PDFInfo
- Publication number
- KR101127355B1 KR101127355B1 KR1020080069980A KR20080069980A KR101127355B1 KR 101127355 B1 KR101127355 B1 KR 101127355B1 KR 1020080069980 A KR1020080069980 A KR 1020080069980A KR 20080069980 A KR20080069980 A KR 20080069980A KR 101127355 B1 KR101127355 B1 KR 101127355B1
- Authority
- KR
- South Korea
- Prior art keywords
- photomask
- pattern
- semi
- transmissive
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 32
- 238000000059 patterning Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims description 52
- 238000002834 transmittance Methods 0.000 claims description 14
- 239000012466 permeate Substances 0.000 claims description 11
- 150000001845 chromium compounds Chemical class 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 120
- 239000010409 thin film Substances 0.000 abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 238000005530 etching Methods 0.000 description 9
- 239000011651 chromium Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910016006 MoSi Inorganic materials 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical class [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007188335 | 2007-07-19 | ||
| JPJP-P-2007-00188335 | 2007-07-19 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120004711A Division KR101357324B1 (ko) | 2007-07-19 | 2012-01-16 | 표시 장치 제조용 포토마스크 및 표시 장치의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090009155A KR20090009155A (ko) | 2009-01-22 |
| KR101127355B1 true KR101127355B1 (ko) | 2012-03-29 |
Family
ID=40268696
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020080069980A Active KR101127355B1 (ko) | 2007-07-19 | 2008-07-18 | 포토마스크 및 그 제조 방법과 패턴 전사 방법 |
| KR1020120004711A Active KR101357324B1 (ko) | 2007-07-19 | 2012-01-16 | 표시 장치 제조용 포토마스크 및 표시 장치의 제조 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120004711A Active KR101357324B1 (ko) | 2007-07-19 | 2012-01-16 | 표시 장치 제조용 포토마스크 및 표시 장치의 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP5244485B2 (enExample) |
| KR (2) | KR101127355B1 (enExample) |
| CN (1) | CN101349864B (enExample) |
| TW (1) | TWI422961B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101194151B1 (ko) | 2009-06-23 | 2012-12-24 | 호야 가부시키가이샤 | 다계조 포토마스크, 패턴 전사 방법 및 박막 트랜지스터의 제조 방법 |
| WO2010150355A1 (ja) * | 2009-06-23 | 2010-12-29 | Hoya株式会社 | 多階調フォトマスク |
| CN101943854B (zh) * | 2009-07-03 | 2012-07-04 | 深圳清溢光电股份有限公司 | 半灰阶掩模板半曝光区的设计方法及其制造方法 |
| JP5409238B2 (ja) * | 2009-09-29 | 2014-02-05 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法 |
| JP2011215197A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | フォトマスク及びその製造方法 |
| WO2012005524A2 (en) * | 2010-07-08 | 2012-01-12 | Lg Innotek Co., Ltd. | The printed circuit board and the method for manufacturing the same |
| KR101149023B1 (ko) * | 2010-07-08 | 2012-05-24 | 엘지이노텍 주식회사 | 인쇄회로기판 제조 방법 및 이에 의해 제조된 인쇄회로기판 |
| JP2012212124A (ja) * | 2011-03-23 | 2012-11-01 | Hoya Corp | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP2012212125A (ja) * | 2011-03-24 | 2012-11-01 | Hoya Corp | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP6186719B2 (ja) * | 2011-12-21 | 2017-08-30 | 大日本印刷株式会社 | 大型位相シフトマスクおよび大型位相シフトマスクの製造方法 |
| JP6139826B2 (ja) * | 2012-05-02 | 2017-05-31 | Hoya株式会社 | フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
| JP6081716B2 (ja) * | 2012-05-02 | 2017-02-15 | Hoya株式会社 | フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法 |
| JP6093117B2 (ja) | 2012-06-01 | 2017-03-08 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法及びパターンの転写方法 |
| US9679803B2 (en) | 2014-01-13 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming different patterns in a semiconductor structure using a single mask |
| CN104765245A (zh) * | 2015-04-10 | 2015-07-08 | 深圳市华星光电技术有限公司 | 一种灰色调掩膜及其制作方法 |
| JP6767735B2 (ja) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
| JP6557638B2 (ja) * | 2016-07-06 | 2019-08-07 | 株式会社エスケーエレクトロニクス | ハーフトーンマスクおよびハーフトーンマスクブランクス |
| JP6573591B2 (ja) * | 2016-09-13 | 2019-09-11 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
| JP2017072842A (ja) * | 2016-11-09 | 2017-04-13 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
| KR102032188B1 (ko) | 2017-08-11 | 2019-10-15 | 이용구 | 휴대용 가림판 |
| JP6500076B2 (ja) * | 2017-12-05 | 2019-04-10 | Hoya株式会社 | フォトマスクの製造方法及びフォトマスク基板 |
| CN108196421B (zh) * | 2017-12-14 | 2021-03-05 | 深圳市路维光电股份有限公司 | 灰阶掩膜版制作方法 |
| JP6715360B2 (ja) * | 2019-02-05 | 2020-07-01 | Hoya株式会社 | フォトマスク基板 |
| CN113260178B (zh) * | 2021-06-16 | 2021-09-28 | 广东科翔电子科技股份有限公司 | 一种刚挠结合板高精密线路的制备方法 |
| CN114122022A (zh) * | 2021-11-23 | 2022-03-01 | 京东方科技集团股份有限公司 | 阵列基板、掩膜板、显示装置及阵列基板的制作方法 |
| CN114355736B (zh) * | 2022-02-23 | 2023-06-16 | 鲁东大学 | 一种利用掩膜光刻技术一步制备微米级双层结构的方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3285167B2 (ja) * | 1993-08-06 | 2002-05-27 | 大日本印刷株式会社 | 階調マスク |
| KR950034748A (ko) * | 1994-05-30 | 1995-12-28 | 김주용 | 포토레지스트 패턴 형성방법 |
| KR970008372A (ko) * | 1995-07-31 | 1997-02-24 | 김광호 | 반도체장치의 미세 패턴 형성방법 |
| JP2003173015A (ja) * | 2001-09-28 | 2003-06-20 | Hoya Corp | グレートーンマスクの製造方法 |
| KR20060004276A (ko) * | 2004-07-09 | 2006-01-12 | 현대모비스 주식회사 | 디스크 브레이크의 캘리퍼 어셈블리 |
| TW200639576A (en) * | 2005-02-28 | 2006-11-16 | Hoya Corp | Method of manufacturing gray level mask, gray level mask, and gray level mask blank |
| TW200636820A (en) * | 2005-04-04 | 2006-10-16 | Adv Lcd Tech Dev Ct Co Ltd | Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask |
| JP4850616B2 (ja) * | 2005-08-12 | 2012-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101190045B1 (ko) * | 2005-12-21 | 2012-10-12 | 엘지디스플레이 주식회사 | 포토 마스크 및 이를 이용한 액정표시장치용 어레이 기판의제조 방법 |
| JP4005622B1 (ja) * | 2006-09-04 | 2007-11-07 | ジオマテック株式会社 | フォトマスク用基板及びフォトマスク並びにその製造方法 |
-
2008
- 2008-07-11 TW TW097126216A patent/TWI422961B/zh active
- 2008-07-18 CN CN2008101336974A patent/CN101349864B/zh active Active
- 2008-07-18 KR KR1020080069980A patent/KR101127355B1/ko active Active
- 2008-07-19 JP JP2008187980A patent/JP5244485B2/ja active Active
-
2012
- 2012-01-16 KR KR1020120004711A patent/KR101357324B1/ko active Active
-
2013
- 2013-04-08 JP JP2013080541A patent/JP5555789B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009042753A (ja) | 2009-02-26 |
| TW200925774A (en) | 2009-06-16 |
| KR20120009526A (ko) | 2012-01-31 |
| JP5244485B2 (ja) | 2013-07-24 |
| KR20090009155A (ko) | 2009-01-22 |
| TWI422961B (zh) | 2014-01-11 |
| KR101357324B1 (ko) | 2014-02-03 |
| CN101349864A (zh) | 2009-01-21 |
| JP2013137576A (ja) | 2013-07-11 |
| CN101349864B (zh) | 2013-04-03 |
| JP5555789B2 (ja) | 2014-07-23 |
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