KR101121938B1 - 웨이퍼 처리를 위한 챔버 및 관련 방법 - Google Patents

웨이퍼 처리를 위한 챔버 및 관련 방법 Download PDF

Info

Publication number
KR101121938B1
KR101121938B1 KR1020117002991A KR20117002991A KR101121938B1 KR 101121938 B1 KR101121938 B1 KR 101121938B1 KR 1020117002991 A KR1020117002991 A KR 1020117002991A KR 20117002991 A KR20117002991 A KR 20117002991A KR 101121938 B1 KR101121938 B1 KR 101121938B1
Authority
KR
South Korea
Prior art keywords
wafer
volume
chamber
seal
wafer processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020117002991A
Other languages
English (en)
Korean (ko)
Other versions
KR20110028541A (ko
Inventor
존 파크스
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/404,502 external-priority patent/US7153388B2/en
Priority claimed from US10/404,472 external-priority patent/US7392815B2/en
Priority claimed from US10/404,402 external-priority patent/US7357115B2/en
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20110028541A publication Critical patent/KR20110028541A/ko
Application granted granted Critical
Publication of KR101121938B1 publication Critical patent/KR101121938B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020117002991A 2003-03-31 2004-03-23 웨이퍼 처리를 위한 챔버 및 관련 방법 Expired - Fee Related KR101121938B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US10/404,502 2003-03-31
US10/404,472 2003-03-31
US10/404,502 US7153388B2 (en) 2003-03-31 2003-03-31 Chamber for high-pressure wafer processing and method for making the same
US10/404,472 US7392815B2 (en) 2003-03-31 2003-03-31 Chamber for wafer cleaning and method for making the same
US10/404,402 US7357115B2 (en) 2003-03-31 2003-03-31 Wafer clamping apparatus and method for operating the same
US10/404,402 2003-03-31
PCT/US2004/008994 WO2004093166A2 (en) 2003-03-31 2004-03-23 Chamber and associated methods for wafer processing

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020057018809A Division KR101071603B1 (ko) 2003-03-31 2005-09-30 웨이퍼 처리를 위한 챔버 및 관련 방법

Publications (2)

Publication Number Publication Date
KR20110028541A KR20110028541A (ko) 2011-03-18
KR101121938B1 true KR101121938B1 (ko) 2012-03-14

Family

ID=33303846

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020117002991A Expired - Fee Related KR101121938B1 (ko) 2003-03-31 2004-03-23 웨이퍼 처리를 위한 챔버 및 관련 방법
KR1020117002990A Expired - Fee Related KR101121937B1 (ko) 2003-03-31 2004-03-23 웨이퍼 처리를 위한 챔버 및 관련 방법
KR1020057018809A Expired - Fee Related KR101071603B1 (ko) 2003-03-31 2005-09-30 웨이퍼 처리를 위한 챔버 및 관련 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020117002990A Expired - Fee Related KR101121937B1 (ko) 2003-03-31 2004-03-23 웨이퍼 처리를 위한 챔버 및 관련 방법
KR1020057018809A Expired - Fee Related KR101071603B1 (ko) 2003-03-31 2005-09-30 웨이퍼 처리를 위한 챔버 및 관련 방법

Country Status (7)

Country Link
EP (1) EP1609174B1 (enExample)
JP (1) JP4560040B2 (enExample)
KR (3) KR101121938B1 (enExample)
AT (1) ATE535935T1 (enExample)
MY (2) MY142891A (enExample)
TW (1) TWI233147B (enExample)
WO (1) WO2004093166A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US8544483B2 (en) 2005-04-01 2013-10-01 Tel Fsi, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
JP4861016B2 (ja) * 2006-01-23 2012-01-25 株式会社東芝 処理装置
CN101484974B (zh) 2006-07-07 2013-11-06 Fsi国际公司 用于处理微电子工件的设备和方法以及遮挡结构
KR20100031681A (ko) 2007-05-18 2010-03-24 브룩스 오토메이션 인코퍼레이티드 빠른 교환 로봇을 가진 컴팩트 기판 운송 시스템
KR20110005699A (ko) 2008-05-09 2011-01-18 에프에스아이 인터내쇼날 인크. 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 공구 및 방법
JP5655735B2 (ja) * 2011-07-26 2015-01-21 東京エレクトロン株式会社 処理装置、処理方法及び記憶媒体
JP6703100B2 (ja) * 2015-10-04 2020-06-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 容積が縮小された処理チャンバ
CN115527897A (zh) 2015-10-04 2022-12-27 应用材料公司 小热质量的加压腔室

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020046707A1 (en) * 2000-07-26 2002-04-25 Biberger Maximilian A. High pressure processing chamber for semiconductor substrate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2731950B2 (ja) 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
EP0463853B1 (en) 1990-06-29 1998-11-04 Canon Kabushiki Kaisha Vacuum chuck
US5960555A (en) 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5803797A (en) * 1996-11-26 1998-09-08 Micron Technology, Inc. Method and apparatus to hold intergrated circuit chips onto a chuck and to simultaneously remove multiple intergrated circuit chips from a cutting chuck
US6032997A (en) * 1998-04-16 2000-03-07 Excimer Laser Systems Vacuum chuck
WO2000005750A1 (en) 1998-07-23 2000-02-03 Applied Materials, Inc. Improved substrate support member
US6279976B1 (en) 1999-05-13 2001-08-28 Micron Technology, Inc. Wafer handling device having conforming perimeter seal
US6716084B2 (en) * 2001-01-11 2004-04-06 Nutool, Inc. Carrier head for holding a wafer and allowing processing on a front face thereof to occur
US6684523B2 (en) * 2001-08-27 2004-02-03 Applied Materials, Inc. Particle removal apparatus
US20030047551A1 (en) * 2001-09-13 2003-03-13 Worm Steven Lee Guard heater and pressure chamber assembly including the same
JP3960462B2 (ja) * 2001-09-17 2007-08-15 大日本スクリーン製造株式会社 基板処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020046707A1 (en) * 2000-07-26 2002-04-25 Biberger Maximilian A. High pressure processing chamber for semiconductor substrate

Also Published As

Publication number Publication date
WO2004093166A2 (en) 2004-10-28
KR101071603B1 (ko) 2011-10-10
EP1609174A2 (en) 2005-12-28
ATE535935T1 (de) 2011-12-15
MY141406A (en) 2010-04-30
KR101121937B1 (ko) 2012-03-14
JP2007524990A (ja) 2007-08-30
TW200425243A (en) 2004-11-16
KR20110028540A (ko) 2011-03-18
JP4560040B2 (ja) 2010-10-13
EP1609174B1 (en) 2011-11-30
KR20050118226A (ko) 2005-12-15
KR20110028541A (ko) 2011-03-18
TWI233147B (en) 2005-05-21
WO2004093166A3 (en) 2005-01-06
MY142891A (en) 2011-01-31

Similar Documents

Publication Publication Date Title
US7566370B2 (en) Wafer clamping apparatus and method for operating the same
US7896974B2 (en) Chamber for wafer cleaning and method for making the same
KR100687306B1 (ko) 배출-구동 에스엠아이에프 포드 정화 시스템
US6628503B2 (en) Gas cooled electrostatic pin chuck for vacuum applications
KR100414723B1 (ko) 가압 처리 장치
JP7492554B2 (ja) 雰囲気が制御された移送モジュール及び処理システム
TWI670386B (zh) 用於快速冷卻基板的方法與設備
US20040149389A1 (en) Plasma processing device
JP2009076919A (ja) 基板処理システムのための多機能チャンバ
KR101121938B1 (ko) 웨이퍼 처리를 위한 챔버 및 관련 방법
KR101922811B1 (ko) 기판 처리 장치
KR100537934B1 (ko) 반도체가공처리시스템용배면가스신속제거장치
US7153388B2 (en) Chamber for high-pressure wafer processing and method for making the same
JP5383979B2 (ja) 処理システム
JP2007524990A5 (enExample)
JP4907310B2 (ja) 処理装置、処理方法及び記録媒体
JP3996002B2 (ja) 真空処理装置
JP4842771B2 (ja) 処理システムと処理方法および記録媒体
US7434590B2 (en) Method and apparatus for clamping a substrate in a high pressure processing system
CN100565782C (zh) 用于半导体衬底的高压处理室
CN111696888A (zh) 基板冷却装置和基板冷却方法
JP2008124378A (ja) 処理システムと処理方法および記録媒体

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

St.27 status event code: A-0-1-A10-A18-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U12-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20150206

Year of fee payment: 4

PR1001 Payment of annual fee

Fee payment year number: 4

St.27 status event code: A-4-4-U10-U11-oth-PR1001

FPAY Annual fee payment

Payment date: 20160205

Year of fee payment: 5

PR1001 Payment of annual fee

Fee payment year number: 5

St.27 status event code: A-4-4-U10-U11-oth-PR1001

FPAY Annual fee payment

Payment date: 20170217

Year of fee payment: 6

PR1001 Payment of annual fee

Fee payment year number: 6

St.27 status event code: A-4-4-U10-U11-oth-PR1001

FPAY Annual fee payment

Payment date: 20180208

Year of fee payment: 7

PR1001 Payment of annual fee

Fee payment year number: 7

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 8

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PC1903 Unpaid annual fee

Not in force date: 20200224

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200224

St.27 status event code: N-4-6-H10-H13-oth-PC1903