JP4560040B2 - ウエハ処理のためのチャンバおよび方法 - Google Patents
ウエハ処理のためのチャンバおよび方法 Download PDFInfo
- Publication number
- JP4560040B2 JP4560040B2 JP2006507529A JP2006507529A JP4560040B2 JP 4560040 B2 JP4560040 B2 JP 4560040B2 JP 2006507529 A JP2006507529 A JP 2006507529A JP 2006507529 A JP2006507529 A JP 2006507529A JP 4560040 B2 JP4560040 B2 JP 4560040B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- space
- plate
- wafer processing
- fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims abstract description 286
- 238000000034 method Methods 0.000 title claims description 79
- 239000012530 fluid Substances 0.000 claims abstract description 259
- 238000004140 cleaning Methods 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 24
- 230000007246 mechanism Effects 0.000 claims description 16
- 238000004891 communication Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 655
- 239000000463 material Substances 0.000 description 20
- 238000012546 transfer Methods 0.000 description 16
- 230000001276 controlling effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- 230000001105 regulatory effect Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 239000012768 molten material Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 101150082661 MFM1 gene Proteins 0.000 description 2
- 101100401327 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfm2 gene Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 101500020766 Sus scrofa FS-303 Proteins 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000377 silicon dioxide Chemical group 0.000 description 1
- 239000002002 slurry Chemical group 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/404,502 US7153388B2 (en) | 2003-03-31 | 2003-03-31 | Chamber for high-pressure wafer processing and method for making the same |
| US10/404,472 US7392815B2 (en) | 2003-03-31 | 2003-03-31 | Chamber for wafer cleaning and method for making the same |
| US10/404,402 US7357115B2 (en) | 2003-03-31 | 2003-03-31 | Wafer clamping apparatus and method for operating the same |
| PCT/US2004/008994 WO2004093166A2 (en) | 2003-03-31 | 2004-03-23 | Chamber and associated methods for wafer processing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007524990A JP2007524990A (ja) | 2007-08-30 |
| JP2007524990A5 JP2007524990A5 (enExample) | 2009-11-26 |
| JP4560040B2 true JP4560040B2 (ja) | 2010-10-13 |
Family
ID=33303846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006507529A Expired - Fee Related JP4560040B2 (ja) | 2003-03-31 | 2004-03-23 | ウエハ処理のためのチャンバおよび方法 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1609174B1 (enExample) |
| JP (1) | JP4560040B2 (enExample) |
| KR (3) | KR101121937B1 (enExample) |
| AT (1) | ATE535935T1 (enExample) |
| MY (2) | MY141406A (enExample) |
| TW (1) | TWI233147B (enExample) |
| WO (1) | WO2004093166A2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8323420B2 (en) | 2005-06-30 | 2012-12-04 | Lam Research Corporation | Method for removing material from semiconductor wafer and apparatus for performing the same |
| JP4692785B2 (ja) | 2005-04-01 | 2011-06-01 | エフエスアイ インターナショナル インコーポレイテッド | 一つ又はそれ以上の処理流体を用いた、半導体ウエハー又は他のマイクロエレクトロニクス用の基板に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム |
| JP4861016B2 (ja) * | 2006-01-23 | 2012-01-25 | 株式会社東芝 | 処理装置 |
| CN101484974B (zh) | 2006-07-07 | 2013-11-06 | Fsi国际公司 | 用于处理微电子工件的设备和方法以及遮挡结构 |
| KR20150038360A (ko) | 2007-05-18 | 2015-04-08 | 브룩스 오토메이션 인코퍼레이티드 | 빠른 교환 로봇을 가진 컴팩트 기판 운송 시스템 |
| KR20110005699A (ko) | 2008-05-09 | 2011-01-18 | 에프에스아이 인터내쇼날 인크. | 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 공구 및 방법 |
| JP5655735B2 (ja) * | 2011-07-26 | 2015-01-21 | 東京エレクトロン株式会社 | 処理装置、処理方法及び記憶媒体 |
| CN108140549B (zh) * | 2015-10-04 | 2022-12-20 | 应用材料公司 | 缩减空间的处理腔室 |
| KR102189211B1 (ko) | 2015-10-04 | 2020-12-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 작은 열 질량의 가압 챔버 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2731950B2 (ja) * | 1989-07-13 | 1998-03-25 | キヤノン株式会社 | 露光方法 |
| EP0463853B1 (en) * | 1990-06-29 | 1998-11-04 | Canon Kabushiki Kaisha | Vacuum chuck |
| US5960555A (en) * | 1996-07-24 | 1999-10-05 | Applied Materials, Inc. | Method and apparatus for purging the back side of a substrate during chemical vapor processing |
| US5803797A (en) * | 1996-11-26 | 1998-09-08 | Micron Technology, Inc. | Method and apparatus to hold intergrated circuit chips onto a chuck and to simultaneously remove multiple intergrated circuit chips from a cutting chuck |
| US6032997A (en) * | 1998-04-16 | 2000-03-07 | Excimer Laser Systems | Vacuum chuck |
| WO2000005750A1 (en) * | 1998-07-23 | 2000-02-03 | Applied Materials, Inc. | Improved substrate support member |
| US6279976B1 (en) * | 1999-05-13 | 2001-08-28 | Micron Technology, Inc. | Wafer handling device having conforming perimeter seal |
| JP4724353B2 (ja) * | 2000-07-26 | 2011-07-13 | 東京エレクトロン株式会社 | 半導体基板のための高圧処理チャンバー |
| US6716084B2 (en) * | 2001-01-11 | 2004-04-06 | Nutool, Inc. | Carrier head for holding a wafer and allowing processing on a front face thereof to occur |
| US6684523B2 (en) * | 2001-08-27 | 2004-02-03 | Applied Materials, Inc. | Particle removal apparatus |
| US20030047551A1 (en) * | 2001-09-13 | 2003-03-13 | Worm Steven Lee | Guard heater and pressure chamber assembly including the same |
| JP3960462B2 (ja) * | 2001-09-17 | 2007-08-15 | 大日本スクリーン製造株式会社 | 基板処理装置 |
-
2004
- 2004-03-23 TW TW093107840A patent/TWI233147B/zh not_active IP Right Cessation
- 2004-03-23 JP JP2006507529A patent/JP4560040B2/ja not_active Expired - Fee Related
- 2004-03-23 WO PCT/US2004/008994 patent/WO2004093166A2/en not_active Ceased
- 2004-03-23 KR KR1020117002990A patent/KR101121937B1/ko not_active Expired - Fee Related
- 2004-03-23 EP EP04758931A patent/EP1609174B1/en not_active Expired - Lifetime
- 2004-03-23 KR KR1020117002991A patent/KR101121938B1/ko not_active Expired - Fee Related
- 2004-03-23 AT AT04758931T patent/ATE535935T1/de active
- 2004-03-31 MY MYPI20071693A patent/MY141406A/en unknown
- 2004-03-31 MY MYPI20041174A patent/MY142891A/en unknown
-
2005
- 2005-09-30 KR KR1020057018809A patent/KR101071603B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004093166A3 (en) | 2005-01-06 |
| JP2007524990A (ja) | 2007-08-30 |
| KR20110028541A (ko) | 2011-03-18 |
| EP1609174B1 (en) | 2011-11-30 |
| MY142891A (en) | 2011-01-31 |
| TW200425243A (en) | 2004-11-16 |
| TWI233147B (en) | 2005-05-21 |
| WO2004093166A2 (en) | 2004-10-28 |
| MY141406A (en) | 2010-04-30 |
| KR101121938B1 (ko) | 2012-03-14 |
| KR101071603B1 (ko) | 2011-10-10 |
| KR101121937B1 (ko) | 2012-03-14 |
| KR20110028540A (ko) | 2011-03-18 |
| EP1609174A2 (en) | 2005-12-28 |
| ATE535935T1 (de) | 2011-12-15 |
| KR20050118226A (ko) | 2005-12-15 |
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