KR101109902B1 - 포토마스크의 제조 방법, 패턴 전사 방법, 포토마스크 기판용 처리 장치, 및 박막 패터닝 방법 - Google Patents

포토마스크의 제조 방법, 패턴 전사 방법, 포토마스크 기판용 처리 장치, 및 박막 패터닝 방법 Download PDF

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Publication number
KR101109902B1
KR101109902B1 KR1020100000415A KR20100000415A KR101109902B1 KR 101109902 B1 KR101109902 B1 KR 101109902B1 KR 1020100000415 A KR1020100000415 A KR 1020100000415A KR 20100000415 A KR20100000415 A KR 20100000415A KR 101109902 B1 KR101109902 B1 KR 101109902B1
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KR
South Korea
Prior art keywords
photomask
resist
pattern
film
resist film
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KR1020100000415A
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English (en)
Korean (ko)
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KR20100081937A (ko
Inventor
다까시 아이자와
Original Assignee
호야 가부시키가이샤
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Publication of KR20100081937A publication Critical patent/KR20100081937A/ko
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Publication of KR101109902B1 publication Critical patent/KR101109902B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020100000415A 2009-01-06 2010-01-05 포토마스크의 제조 방법, 패턴 전사 방법, 포토마스크 기판용 처리 장치, 및 박막 패터닝 방법 KR101109902B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009000565 2009-01-06
JPJP-P-2009-000565 2009-01-06

Publications (2)

Publication Number Publication Date
KR20100081937A KR20100081937A (ko) 2010-07-15
KR101109902B1 true KR101109902B1 (ko) 2012-01-31

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KR1020100000415A KR101109902B1 (ko) 2009-01-06 2010-01-05 포토마스크의 제조 방법, 패턴 전사 방법, 포토마스크 기판용 처리 장치, 및 박막 패터닝 방법

Country Status (3)

Country Link
JP (1) JP5305300B2 (ja)
KR (1) KR101109902B1 (ja)
TW (1) TWI438562B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5154626B2 (ja) 2010-09-30 2013-02-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP5738574B2 (ja) * 2010-11-15 2015-06-24 野村マイクロ・サイエンス株式会社 オゾン水による金属表面の改質方法
TWI588599B (zh) * 2011-04-06 2017-06-21 Ｈｏｙａ股份有限公司 空白光罩之表面處理方法、以及空白光罩之製造方法、以及光罩之製造方法
JP6089667B2 (ja) * 2012-12-13 2017-03-08 大日本印刷株式会社 レジスト付きフォトマスクブランクスの製造方法、および、フォトマスクの製造方法
JP6455979B2 (ja) * 2014-03-18 2019-01-23 Hoya株式会社 レジスト層付ブランク、その製造方法、マスクブランクおよびインプリント用モールドブランク、ならびに転写用マスク、インプリント用モールドおよびそれらの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246290A (ja) * 2001-02-16 2002-08-30 Toshiba Corp パターン形成方法
KR20060003150A (ko) * 2004-07-05 2006-01-10 주식회사 에스앤에스텍 블랭크 마스크와 포토마스크 및 그 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04221959A (ja) * 1990-12-25 1992-08-12 Fujitsu Ltd レジストパターンの形成方法
JPH04318852A (ja) * 1991-04-18 1992-11-10 Fujitsu Ltd レジスト・パターン形成方法
JP2768139B2 (ja) * 1992-06-08 1998-06-25 松下電器産業株式会社 半導体装置の製造方法
JPH06267838A (ja) * 1993-03-11 1994-09-22 Hitachi Ltd レジストパターンの形成方法
JPH09251210A (ja) * 1996-03-15 1997-09-22 Toshiba Corp レジストパターンの形成方法
JP2004163698A (ja) * 2002-11-13 2004-06-10 Ricoh Co Ltd 電子線描画方法、電子線描画方法を用いて作成した原盤をもとに製作したスタンパ用金型、およびスタンパ用金型で製作した情報記録媒体
JP4318209B2 (ja) * 2004-02-09 2009-08-19 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP4936878B2 (ja) * 2006-12-25 2012-05-23 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5063138B2 (ja) * 2007-02-23 2012-10-31 株式会社Ｓｏｋｕｄｏ 基板現像方法および現像装置
JP2010073899A (ja) * 2008-09-18 2010-04-02 Nuflare Technology Inc 基板処理方法および基板処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246290A (ja) * 2001-02-16 2002-08-30 Toshiba Corp パターン形成方法
KR20060003150A (ko) * 2004-07-05 2006-01-10 주식회사 에스앤에스텍 블랭크 마스크와 포토마스크 및 그 제조방법

Also Published As

Publication number Publication date
JP5305300B2 (ja) 2013-10-02
JP2010181872A (ja) 2010-08-19
TWI438562B (zh) 2014-05-21
KR20100081937A (ko) 2010-07-15
TW201030454A (en) 2010-08-16

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