TWI438562B - 光罩之製造方法、圖案轉印方法、光罩基板用處理裝置及薄膜圖案化方法 - Google Patents

光罩之製造方法、圖案轉印方法、光罩基板用處理裝置及薄膜圖案化方法 Download PDF

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Publication number
TWI438562B
TWI438562B TW098144584A TW98144584A TWI438562B TW I438562 B TWI438562 B TW I438562B TW 098144584 A TW098144584 A TW 098144584A TW 98144584 A TW98144584 A TW 98144584A TW I438562 B TWI438562 B TW I438562B
Authority
TW
Taiwan
Prior art keywords
resist
film
pattern
photomask
substrate
Prior art date
Application number
TW098144584A
Other languages
English (en)
Chinese (zh)
Other versions
TW201030454A (en
Inventor
Takashi Aizawa
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW201030454A publication Critical patent/TW201030454A/zh
Application granted granted Critical
Publication of TWI438562B publication Critical patent/TWI438562B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW098144584A 2009-01-06 2009-12-23 光罩之製造方法、圖案轉印方法、光罩基板用處理裝置及薄膜圖案化方法 TWI438562B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009000565 2009-01-06

Publications (2)

Publication Number Publication Date
TW201030454A TW201030454A (en) 2010-08-16
TWI438562B true TWI438562B (zh) 2014-05-21

Family

ID=42642242

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098144584A TWI438562B (zh) 2009-01-06 2009-12-23 光罩之製造方法、圖案轉印方法、光罩基板用處理裝置及薄膜圖案化方法

Country Status (3)

Country Link
JP (1) JP5305300B2 (ja)
KR (1) KR101109902B1 (ja)
TW (1) TWI438562B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5154626B2 (ja) 2010-09-30 2013-02-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP5738574B2 (ja) * 2010-11-15 2015-06-24 野村マイクロ・サイエンス株式会社 オゾン水による金属表面の改質方法
TWI588599B (zh) * 2011-04-06 2017-06-21 Ｈｏｙａ股份有限公司 空白光罩之表面處理方法、以及空白光罩之製造方法、以及光罩之製造方法
JP6089667B2 (ja) * 2012-12-13 2017-03-08 大日本印刷株式会社 レジスト付きフォトマスクブランクスの製造方法、および、フォトマスクの製造方法
JP6455979B2 (ja) * 2014-03-18 2019-01-23 Hoya株式会社 レジスト層付ブランク、その製造方法、マスクブランクおよびインプリント用モールドブランク、ならびに転写用マスク、インプリント用モールドおよびそれらの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04221959A (ja) * 1990-12-25 1992-08-12 Fujitsu Ltd レジストパターンの形成方法
JPH04318852A (ja) * 1991-04-18 1992-11-10 Fujitsu Ltd レジスト・パターン形成方法
JP2768139B2 (ja) * 1992-06-08 1998-06-25 松下電器産業株式会社 半導体装置の製造方法
JPH06267838A (ja) * 1993-03-11 1994-09-22 Hitachi Ltd レジストパターンの形成方法
JPH09251210A (ja) * 1996-03-15 1997-09-22 Toshiba Corp レジストパターンの形成方法
JP4564186B2 (ja) * 2001-02-16 2010-10-20 株式会社東芝 パターン形成方法
JP2004163698A (ja) * 2002-11-13 2004-06-10 Ricoh Co Ltd 電子線描画方法、電子線描画方法を用いて作成した原盤をもとに製作したスタンパ用金型、およびスタンパ用金型で製作した情報記録媒体
JP4318209B2 (ja) * 2004-02-09 2009-08-19 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
KR100635019B1 (ko) * 2004-07-05 2006-10-17 주식회사 에스앤에스텍 블랭크 마스크와 포토마스크 및 그 제조방법
JP4936878B2 (ja) * 2006-12-25 2012-05-23 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5063138B2 (ja) * 2007-02-23 2012-10-31 株式会社Ｓｏｋｕｄｏ 基板現像方法および現像装置
JP2010073899A (ja) * 2008-09-18 2010-04-02 Nuflare Technology Inc 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
KR101109902B1 (ko) 2012-01-31
JP5305300B2 (ja) 2013-10-02
JP2010181872A (ja) 2010-08-19
KR20100081937A (ko) 2010-07-15
TW201030454A (en) 2010-08-16

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