KR101090256B1 - 광마스크 및 이를 이용한 박막 트랜지스터 표시판의 제조방법 - Google Patents

광마스크 및 이를 이용한 박막 트랜지스터 표시판의 제조방법 Download PDF

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Publication number
KR101090256B1
KR101090256B1 KR1020050004272A KR20050004272A KR101090256B1 KR 101090256 B1 KR101090256 B1 KR 101090256B1 KR 1020050004272 A KR1020050004272 A KR 1020050004272A KR 20050004272 A KR20050004272 A KR 20050004272A KR 101090256 B1 KR101090256 B1 KR 101090256B1
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KR
South Korea
Prior art keywords
insulating film
light blocking
delete delete
film
layer
Prior art date
Application number
KR1020050004272A
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English (en)
Korean (ko)
Other versions
KR20060084020A (ko
Inventor
박정민
이희국
전우석
김주한
정두희
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020050004272A priority Critical patent/KR101090256B1/ko
Priority to TW094144180A priority patent/TWI368327B/zh
Priority to CN2005101320046A priority patent/CN1808266B/zh
Priority to US11/313,150 priority patent/US7371592B2/en
Priority to JP2006009027A priority patent/JP4898229B2/ja
Publication of KR20060084020A publication Critical patent/KR20060084020A/ko
Priority to US12/105,918 priority patent/US20080199788A1/en
Application granted granted Critical
Publication of KR101090256B1 publication Critical patent/KR101090256B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/66583—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
KR1020050004272A 2005-01-17 2005-01-17 광마스크 및 이를 이용한 박막 트랜지스터 표시판의 제조방법 KR101090256B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050004272A KR101090256B1 (ko) 2005-01-17 2005-01-17 광마스크 및 이를 이용한 박막 트랜지스터 표시판의 제조방법
TW094144180A TWI368327B (en) 2005-01-17 2005-12-14 Optical mask and manufacturing method of thin film transistor array panel using the optical mask
CN2005101320046A CN1808266B (zh) 2005-01-17 2005-12-16 光掩模和采用该光掩模的薄膜晶体管阵列面板的制造方法
US11/313,150 US7371592B2 (en) 2005-01-17 2005-12-19 Manufacturing method of thin film transistor array panel using an optical mask
JP2006009027A JP4898229B2 (ja) 2005-01-17 2006-01-17 光マスク、及びそれを用いた薄膜トランジスタ表示パネルの製造方法
US12/105,918 US20080199788A1 (en) 2005-01-17 2008-04-18 Manufacturing method of thin film transistor array panel using an optical mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050004272A KR101090256B1 (ko) 2005-01-17 2005-01-17 광마스크 및 이를 이용한 박막 트랜지스터 표시판의 제조방법

Publications (2)

Publication Number Publication Date
KR20060084020A KR20060084020A (ko) 2006-07-21
KR101090256B1 true KR101090256B1 (ko) 2011-12-06

Family

ID=36840229

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050004272A KR101090256B1 (ko) 2005-01-17 2005-01-17 광마스크 및 이를 이용한 박막 트랜지스터 표시판의 제조방법

Country Status (2)

Country Link
KR (1) KR101090256B1 (zh)
CN (1) CN1808266B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100922802B1 (ko) 2006-12-29 2009-10-21 엘지디스플레이 주식회사 Ｔｆｔ 어레이 기판 및 그 제조방법
CN104062843A (zh) * 2014-07-18 2014-09-24 深圳市华星光电技术有限公司 一种掩膜板、阵列基板制作方法及阵列基板
CN108761858B (zh) * 2018-05-21 2020-11-27 南京中电熊猫液晶显示科技有限公司 一种掩膜版及液晶面板不良品再利用的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335151B1 (en) * 1999-06-18 2002-01-01 International Business Machines Corporation Micro-surface fabrication process
JP2003173015A (ja) * 2001-09-28 2003-06-20 Hoya Corp グレートーンマスクの製造方法
TW552467B (en) * 2002-03-22 2003-09-11 Ind Tech Res Inst Manufacturing method of a diffusive direct reflector using gray-tone exposure

Also Published As

Publication number Publication date
KR20060084020A (ko) 2006-07-21
CN1808266A (zh) 2006-07-26
CN1808266B (zh) 2010-10-06

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