KR101069786B1 - 광반도체 밀봉용 에폭시 수지 조성물, 그것의 경화된 수지,및 그것을 이용하여 수득된 광반도체 디바이스 - Google Patents
광반도체 밀봉용 에폭시 수지 조성물, 그것의 경화된 수지,및 그것을 이용하여 수득된 광반도체 디바이스 Download PDFInfo
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- KR101069786B1 KR101069786B1 KR1020070095811A KR20070095811A KR101069786B1 KR 101069786 B1 KR101069786 B1 KR 101069786B1 KR 1020070095811 A KR1020070095811 A KR 1020070095811A KR 20070095811 A KR20070095811 A KR 20070095811A KR 101069786 B1 KR101069786 B1 KR 101069786B1
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- epoxy resin
- resin composition
- optical semiconductor
- component
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0091—Complexes with metal-heteroatom-bonds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/315—Compounds containing carbon-to-nitrogen triple bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
Abstract
Description
실시예 | 비교예 | ||||
1 | 2 | 3 | 1 | 2 | |
에폭시 수지 *1 | 100 | 100 | 100 | 100 | 100 |
경화제 *2 | 99 | 99 | 99 | 99 | 99 |
경화 가속화제 *3 | 1 | 1 | 1 | 1 | 1 |
나프탈로시아닌 착색제 *4 | 0.018 | 0.018 | 0.005 | - | - |
나프탈로시아닌 착색제 *5 | - | 0.018 | - | - | - |
프탈로시아닌 착색제 *6 | - | - | 0.060 | - | - |
디이모늄 *7 | - | - | - | 0.400 | - |
디이모늄 *8 | - | - | - | - | 0.400 |
Claims (9)
- 하기 성분 (A) 내지 (D)를 포함하는 광반도체 밀봉용 에폭시 수지 조성물로서, 1 mm 두께의 성형체로 성형될 때, 가시광 영역(450 내지 650 nm)에서 최대 투과율이 10% 이상이고, 근적외선 영역(750 내지 900 nm)에서 투과율이 5% 이하인 에폭시 수지 조성물:(A) 에폭시 수지;(B) 경화제;(C) 나프탈로시아닌 착색제; 및(D) 프탈로시아닌 착색제.
- 제2항에 있어서, 화학식 1로 표시되는 2종 이상의 나프탈로시아닌 착색제가 성분 (C)로서 사용되고, 상기 화학식 1로 표시되는 상기 나프탈로시아닌 착색제는 R 및 M으로 표시되는 원자, 치환기 및 금속 또는 금속 산화물, 및 원자 또는 작용기의 수를 가리키는 n 중 하나 이상에 있어서 상호 상이한 것인 광반도체 밀봉용 에폭시 수지 조성물.
- 제1항에 있어서, 성분 (C)는 성분 (A) 100 중량부에 대하여 0.0005 내지 0.5 중량부 범위 내의 양으로 함유되는 것인 광반도체 밀봉용 에폭시 수지 조성물.
- 제1항에 있어서, 성분 (D)는 성분 (A) 100 중량부에 대하여 0.5 중량부 이하의 양으로 함유되는 것인 광반도체 밀봉용 에폭시 수지 조성물.
- 제1항에 따른 광반도체 밀봉용 에폭시 수지 조성물을 경화함으로써 수득가능한 경화된 에폭시 수지.
- 광반도체 소자를 제1항에 따른 광반도체 밀봉용 에폭시 수지 조성물로 밀봉함으로써 수득가능한 광반도체 디바이스.
- 삭제
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006255410 | 2006-09-21 | ||
JPJP-P-2006-00255410 | 2006-09-21 | ||
JPJP-P-2007-00145913 | 2007-05-31 | ||
JP2007145913A JP4950770B2 (ja) | 2006-09-21 | 2007-05-31 | 光半導体封止用エポキシ樹脂組成物およびその硬化体ならびにそれを用いた光半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080027172A KR20080027172A (ko) | 2008-03-26 |
KR101069786B1 true KR101069786B1 (ko) | 2011-10-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070095811A KR101069786B1 (ko) | 2006-09-21 | 2007-09-20 | 광반도체 밀봉용 에폭시 수지 조성물, 그것의 경화된 수지,및 그것을 이용하여 수득된 광반도체 디바이스 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8017670B2 (ko) |
EP (1) | EP1903605B1 (ko) |
JP (1) | JP4950770B2 (ko) |
KR (1) | KR101069786B1 (ko) |
AT (1) | ATE438198T1 (ko) |
DE (1) | DE602007001752D1 (ko) |
MY (1) | MY142489A (ko) |
TW (1) | TWI415231B (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5349087B2 (ja) * | 2009-03-09 | 2013-11-20 | 日東電工株式会社 | 光半導体受光素子封止用エポキシ樹脂組成物およびその製造方法、ならびに光半導体装置 |
KR100967613B1 (ko) * | 2009-11-10 | 2010-07-05 | 주식회사 네패스신소재 | 반경화 에폭시 수지, 및 이의 제조방법 |
US9263406B2 (en) | 2009-11-10 | 2016-02-16 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP6277611B2 (ja) * | 2013-06-24 | 2018-02-14 | 日立化成株式会社 | 素子封止用エポキシ樹脂成形材料及び電子部品装置 |
KR102232999B1 (ko) * | 2013-06-28 | 2021-03-26 | 야마다 가가쿠 고교 가부시키가이샤 | 프탈로시아닌 화합물, 근적외선 흡수 색소 및 근적외선 흡수 재료 |
EP2827368B1 (en) | 2013-07-19 | 2019-06-05 | ams AG | Package for an optical sensor, optical sensor arrangement and method of producing a package for an optical sensor |
CN104151776B (zh) * | 2014-08-08 | 2017-05-10 | 吴晓龙 | 可见光传感器 |
US10611911B1 (en) | 2016-05-05 | 2020-04-07 | SolEpoxy, Inc. | Epoxy resin composition with soda lime glass filler |
KR102623289B1 (ko) | 2018-01-31 | 2024-01-11 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 적외선 투과성 경화형 조성물, 그의 경화물 및 광반도체 장치 |
CN113711113B (zh) * | 2019-04-26 | 2023-07-28 | 三井化学株式会社 | 光学材料、光学材料用聚合性组合物、塑料透镜、护目镜、红外线传感器及红外线照相机 |
WO2023176610A1 (ja) * | 2022-03-17 | 2023-09-21 | 富士フイルム株式会社 | 硬化性組成物、膜、光学フィルタ、固体撮像素子および画像表示装置 |
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JP2002265760A (ja) | 2001-03-14 | 2002-09-18 | Sumitomo Bakelite Co Ltd | 難燃性エポキシ樹脂組成物およびそれを用いた半導体封止材料 |
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JPS63179921A (ja) * | 1987-01-21 | 1988-07-23 | Toshiba Corp | 封止用樹脂組成物およびそれを用いた樹脂封止型半導体装置 |
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JP3888712B2 (ja) * | 1995-10-02 | 2007-03-07 | 三井化学株式会社 | 高耐久性近赤外線吸収化合物及びその用途 |
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- 2007-05-31 JP JP2007145913A patent/JP4950770B2/ja active Active
- 2007-09-10 TW TW096133727A patent/TWI415231B/zh active
- 2007-09-14 US US11/855,267 patent/US8017670B2/en not_active Expired - Fee Related
- 2007-09-17 MY MYPI20071553A patent/MY142489A/en unknown
- 2007-09-17 EP EP07018230A patent/EP1903605B1/en not_active Not-in-force
- 2007-09-17 DE DE602007001752T patent/DE602007001752D1/de active Active
- 2007-09-17 AT AT07018230T patent/ATE438198T1/de not_active IP Right Cessation
- 2007-09-20 KR KR1020070095811A patent/KR101069786B1/ko active IP Right Grant
Patent Citations (3)
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JP2002226678A (ja) * | 2000-11-28 | 2002-08-14 | Sumitomo Bakelite Co Ltd | 難燃性エポキシ樹脂組成物およびそれを用いた半導体封止材料並びに半導体装置 |
JP2002265760A (ja) | 2001-03-14 | 2002-09-18 | Sumitomo Bakelite Co Ltd | 難燃性エポキシ樹脂組成物およびそれを用いた半導体封止材料 |
JP2006206846A (ja) | 2005-01-31 | 2006-08-10 | Sumitomo Bakelite Co Ltd | 半導体封止用樹脂組成物及び半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20080114101A1 (en) | 2008-05-15 |
US20100041799A2 (en) | 2010-02-18 |
EP1903605A1 (en) | 2008-03-26 |
US8017670B2 (en) | 2011-09-13 |
DE602007001752D1 (de) | 2009-09-10 |
JP2008101188A (ja) | 2008-05-01 |
JP4950770B2 (ja) | 2012-06-13 |
KR20080027172A (ko) | 2008-03-26 |
ATE438198T1 (de) | 2009-08-15 |
TWI415231B (zh) | 2013-11-11 |
TW200901399A (en) | 2009-01-01 |
EP1903605B1 (en) | 2009-07-29 |
MY142489A (en) | 2010-11-30 |
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