KR101022680B1 - 최적위치 검출식 검출방법, 위치정합방법, 노광방법,디바이스 제조방법 및 디바이스 - Google Patents

최적위치 검출식 검출방법, 위치정합방법, 노광방법,디바이스 제조방법 및 디바이스 Download PDF

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KR101022680B1
KR101022680B1 KR1020057015828A KR20057015828A KR101022680B1 KR 101022680 B1 KR101022680 B1 KR 101022680B1 KR 1020057015828 A KR1020057015828 A KR 1020057015828A KR 20057015828 A KR20057015828 A KR 20057015828A KR 101022680 B1 KR101022680 B1 KR 101022680B1
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KR20050098963A (ko
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신이치 오키타
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020057015828A 2003-02-26 2004-02-24 최적위치 검출식 검출방법, 위치정합방법, 노광방법,디바이스 제조방법 및 디바이스 Expired - Fee Related KR101022680B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00049421 2003-02-26
JP2003049421A JP2004265957A (ja) 2003-02-26 2003-02-26 最適位置検出式の検出方法、位置合わせ方法、露光方法、デバイス製造方法及びデバイス

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Publication Number Publication Date
KR20050098963A KR20050098963A (ko) 2005-10-12
KR101022680B1 true KR101022680B1 (ko) 2011-03-22

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Country Status (7)

Country Link
US (1) US20060040191A1 (enExample)
EP (1) EP1603153B1 (enExample)
JP (1) JP2004265957A (enExample)
KR (1) KR101022680B1 (enExample)
CN (1) CN1751378B (enExample)
TW (1) TW200507136A (enExample)
WO (1) WO2004077534A1 (enExample)

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WO2005053007A1 (ja) * 2003-11-28 2005-06-09 Nikon Corporation 露光方法及びデバイス製造方法、露光装置、並びにプログラム
JP4715749B2 (ja) * 2004-08-19 2011-07-06 株式会社ニコン アライメント情報表示方法とそのプログラム、アライメント方法、露光方法、デバイス製造方法、表示システム、表示装置
US8130362B2 (en) 2004-09-14 2012-03-06 Nikon Corporation Correction method and exposure apparatus
JP2006148013A (ja) * 2004-11-24 2006-06-08 Nikon Corp 位置合わせ方法及び露光方法
US7126669B2 (en) * 2004-12-27 2006-10-24 Asml Netherlands B.V. Method and system for automated process correction using model parameters, and lithographic apparatus using such method and system
DE102005006239A1 (de) * 2005-02-10 2006-08-17 Leica Microsystems Cms Gmbh Vorrichtung zur Einstellung der Divergenz und/oder Konvergenz eines Lichtstrahls
EP1744217B1 (en) * 2005-07-12 2012-03-14 ASML Netherlands B.V. Method of selecting a grid model for correcting grid deformations in a lithographic apparatus and lithographic assembly using the same
KR101440630B1 (ko) * 2006-01-26 2014-09-15 가부시키가이샤 니콘 중첩 관리 방법 및 장치, 처리 장치, 측정 장치 및 노광 장치, 디바이스 제조 시스템 및 디바이스 제조 방법, 및 정보 기록 매체
KR100724579B1 (ko) 2006-02-01 2007-06-04 삼성전자주식회사 웨이퍼 프리 얼라인먼트 유니트를 갖는 노광설비 및 이를이용한 웨이퍼 프리 얼라인먼트 방법
JP4589998B2 (ja) * 2006-05-10 2010-12-01 株式会社目白プレシジョン 投影露光装置及び投影露光方法
JP2009094265A (ja) * 2007-10-09 2009-04-30 Canon Inc マーク位置検出方法および装置
TWI382187B (zh) * 2008-05-27 2013-01-11 Aerospace Ind Dev Corp 磁浮自動逆向工程設備及其檢測之方法
JP5264406B2 (ja) * 2008-10-22 2013-08-14 キヤノン株式会社 露光装置、露光方法およびデバイスの製造方法
US9052604B2 (en) * 2008-11-06 2015-06-09 Micron Technology, Inc. Photolithography systems and associated alignment correction methods
US8260449B2 (en) 2008-11-06 2012-09-04 Micron Technology, Inc. Photolithography systems and associated methods of overlay error correction
JP2010186918A (ja) * 2009-02-13 2010-08-26 Nikon Corp アライメント方法、露光方法及び露光装置、デバイス製造方法、並びに露光システム
US7977655B2 (en) * 2009-05-21 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system of monitoring E-beam overlay and providing advanced process control
JP5903891B2 (ja) * 2010-01-18 2016-04-13 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
JP2012089591A (ja) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
CN103365124B (zh) * 2012-03-31 2015-01-21 中芯国际集成电路制造(上海)有限公司 曝光对准方法
CN102929105A (zh) * 2012-11-13 2013-02-13 美迪亚印刷设备（杭州）有限公司 曝光质量检测方法
US9645391B2 (en) 2013-11-27 2017-05-09 Tokyo Electron Limited Substrate tuning system and method using optical projection
JP6676527B6 (ja) 2013-11-27 2020-05-20 東京エレクトロン株式会社 光学投影を使用する基板チューニングシステム及び方法
JP6418744B2 (ja) * 2014-01-23 2018-11-07 キヤノン株式会社 パターン形成方法、リソグラフィ装置およびシステム、ならびに物品製造方法
JP6588980B2 (ja) * 2015-07-01 2019-10-09 株式会社日立製作所 線量分布演算装置、粒子線治療装置、及び線量分布演算方法
WO2017060054A1 (en) 2015-10-08 2017-04-13 Asml Netherlands B.V. Method of controlling a lithographic apparatus and device manufacturing method, control system for a lithographic apparatus and lithographic apparatus
KR102318906B1 (ko) * 2016-07-19 2021-10-27 어플라이드 머티어리얼스, 인코포레이티드 구분적 정렬 모델링 방법
US10692227B2 (en) 2017-01-05 2020-06-23 Kla-Tencor Corporation Determination of sampling maps for alignment measurements based on reduction of out of specification points
JP7023062B2 (ja) * 2017-07-24 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
CN109146956B (zh) * 2018-08-09 2021-11-16 厦门市计量检定测试院 一种视觉定位系统的线性误差修正系数获取方法
US11011435B2 (en) * 2018-11-20 2021-05-18 Asm Technology Singapore Pte Ltd Apparatus and method inspecting bonded semiconductor dice
JP7369529B2 (ja) * 2019-02-28 2023-10-26 株式会社オーク製作所 露光装置およびアライメント方法
CN110045582B (zh) * 2019-04-19 2020-12-18 东莞市多普光电设备有限公司 一种基于数字微镜ldi的装置及倾斜扫描方法
TWI738510B (zh) * 2020-09-15 2021-09-01 倍利科技股份有限公司 半導體元件圖像疊合方法
CN113178408A (zh) * 2021-05-28 2021-07-27 重庆翰博显示科技研发中心有限公司 一种微型电子组件排料转移定位装置及其工作方法
JP2025015221A (ja) * 2023-07-20 2025-01-30 株式会社ニューフレアテクノロジー ステージ位置計測システムの非線形誤差測定方法

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JP2000133579A (ja) * 1998-10-23 2000-05-12 Canon Inc 露光装置および露光方法

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Publication number Publication date
EP1603153A4 (en) 2008-07-09
EP1603153B1 (en) 2013-05-01
WO2004077534A1 (ja) 2004-09-10
US20060040191A1 (en) 2006-02-23
JP2004265957A (ja) 2004-09-24
TWI342057B (enExample) 2011-05-11
KR20050098963A (ko) 2005-10-12
CN1751378B (zh) 2010-06-23
CN1751378A (zh) 2006-03-22
EP1603153A1 (en) 2005-12-07
TW200507136A (en) 2005-02-16

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St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000