TWI342057B - - Google Patents

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Publication number
TWI342057B
TWI342057B TW093104866A TW93104866A TWI342057B TW I342057 B TWI342057 B TW I342057B TW 093104866 A TW093104866 A TW 093104866A TW 93104866 A TW93104866 A TW 93104866A TW I342057 B TWI342057 B TW I342057B
Authority
TW
Taiwan
Prior art keywords
exposure
position information
calculation formula
regions
calculation
Prior art date
Application number
TW093104866A
Other languages
English (en)
Chinese (zh)
Other versions
TW200507136A (en
Inventor
Shinichi Okita
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200507136A publication Critical patent/TW200507136A/zh
Application granted granted Critical
Publication of TWI342057B publication Critical patent/TWI342057B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093104866A 2003-02-26 2004-02-26 Optimized position detection for detection method, alignment method, exposure method, device manufacturing method, and the device TW200507136A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003049421A JP2004265957A (ja) 2003-02-26 2003-02-26 最適位置検出式の検出方法、位置合わせ方法、露光方法、デバイス製造方法及びデバイス

Publications (2)

Publication Number Publication Date
TW200507136A TW200507136A (en) 2005-02-16
TWI342057B true TWI342057B (enExample) 2011-05-11

Family

ID=32923308

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093104866A TW200507136A (en) 2003-02-26 2004-02-26 Optimized position detection for detection method, alignment method, exposure method, device manufacturing method, and the device

Country Status (7)

Country Link
US (1) US20060040191A1 (enExample)
EP (1) EP1603153B1 (enExample)
JP (1) JP2004265957A (enExample)
KR (1) KR101022680B1 (enExample)
CN (1) CN1751378B (enExample)
TW (1) TW200507136A (enExample)
WO (1) WO2004077534A1 (enExample)

Families Citing this family (36)

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JP4400745B2 (ja) * 2003-11-28 2010-01-20 株式会社ニコン 露光方法及びデバイス製造方法、露光装置、並びにプログラム
KR101191057B1 (ko) * 2004-08-19 2012-10-15 가부시키가이샤 니콘 얼라인먼트 정보 표시 방법과 그 프로그램, 얼라인먼트방법, 노광 방법, 디바이스 제조 방법, 표시 시스템, 표시장치, 프로그램 및 측정/검사 장치
JP4844835B2 (ja) * 2004-09-14 2011-12-28 株式会社ニコン 補正方法及び露光装置
JP2006148013A (ja) * 2004-11-24 2006-06-08 Nikon Corp 位置合わせ方法及び露光方法
US7126669B2 (en) * 2004-12-27 2006-10-24 Asml Netherlands B.V. Method and system for automated process correction using model parameters, and lithographic apparatus using such method and system
DE102005006239A1 (de) * 2005-02-10 2006-08-17 Leica Microsystems Cms Gmbh Vorrichtung zur Einstellung der Divergenz und/oder Konvergenz eines Lichtstrahls
EP1744217B1 (en) * 2005-07-12 2012-03-14 ASML Netherlands B.V. Method of selecting a grid model for correcting grid deformations in a lithographic apparatus and lithographic assembly using the same
WO2007086316A1 (ja) * 2006-01-26 2007-08-02 Nikon Corporation 重ね合わせ管理方法及び装置、処理装置、測定装置及び露光装置、デバイス製造システム及びデバイス製造方法、並びにプログラム及び情報記録媒体
KR100724579B1 (ko) * 2006-02-01 2007-06-04 삼성전자주식회사 웨이퍼 프리 얼라인먼트 유니트를 갖는 노광설비 및 이를이용한 웨이퍼 프리 얼라인먼트 방법
WO2007129688A1 (ja) * 2006-05-10 2007-11-15 Mejiro Precision, Inc. 投影露光装置及び投影露光方法
JP2009094265A (ja) * 2007-10-09 2009-04-30 Canon Inc マーク位置検出方法および装置
TWI382187B (zh) * 2008-05-27 2013-01-11 Aerospace Ind Dev Corp 磁浮自動逆向工程設備及其檢測之方法
JP5264406B2 (ja) * 2008-10-22 2013-08-14 キヤノン株式会社 露光装置、露光方法およびデバイスの製造方法
US8260449B2 (en) 2008-11-06 2012-09-04 Micron Technology, Inc. Photolithography systems and associated methods of overlay error correction
US9052604B2 (en) * 2008-11-06 2015-06-09 Micron Technology, Inc. Photolithography systems and associated alignment correction methods
JP2010186918A (ja) * 2009-02-13 2010-08-26 Nikon Corp アライメント方法、露光方法及び露光装置、デバイス製造方法、並びに露光システム
US7977655B2 (en) * 2009-05-21 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system of monitoring E-beam overlay and providing advanced process control
KR101581083B1 (ko) * 2010-01-18 2015-12-30 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
JP2012089591A (ja) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
CN103365124B (zh) * 2012-03-31 2015-01-21 中芯国际集成电路制造(上海)有限公司 曝光对准方法
CN102929105A (zh) * 2012-11-13 2013-02-13 美迪亚印刷设备（杭州）有限公司 曝光质量检测方法
JP6676527B6 (ja) 2013-11-27 2020-05-20 東京エレクトロン株式会社 光学投影を使用する基板チューニングシステム及び方法
US9645391B2 (en) 2013-11-27 2017-05-09 Tokyo Electron Limited Substrate tuning system and method using optical projection
JP6418744B2 (ja) * 2014-01-23 2018-11-07 キヤノン株式会社 パターン形成方法、リソグラフィ装置およびシステム、ならびに物品製造方法
US10661101B2 (en) * 2015-07-01 2020-05-26 Hitachi, Ltd. Dose distribution calculation device, particle beam therapy system, and dose distribution calculation method
CN108369382B (zh) 2015-10-08 2021-02-05 Asml荷兰有限公司 控制光刻设备的方法和器件制造方法、用于光刻设备的控制系统及光刻设备
CN109073986B (zh) * 2016-07-19 2020-10-30 应用材料公司 分段对准建模方法
US10692227B2 (en) * 2017-01-05 2020-06-23 Kla-Tencor Corporation Determination of sampling maps for alignment measurements based on reduction of out of specification points
JP7023062B2 (ja) * 2017-07-24 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
CN109146956B (zh) * 2018-08-09 2021-11-16 厦门市计量检定测试院 一种视觉定位系统的线性误差修正系数获取方法
US11011435B2 (en) * 2018-11-20 2021-05-18 Asm Technology Singapore Pte Ltd Apparatus and method inspecting bonded semiconductor dice
JP7369529B2 (ja) * 2019-02-28 2023-10-26 株式会社オーク製作所 露光装置およびアライメント方法
CN110045582B (zh) * 2019-04-19 2020-12-18 东莞市多普光电设备有限公司 一种基于数字微镜ldi的装置及倾斜扫描方法
TWI738510B (zh) * 2020-09-15 2021-09-01 倍利科技股份有限公司 半導體元件圖像疊合方法
CN113178408A (zh) * 2021-05-28 2021-07-27 重庆翰博显示科技研发中心有限公司 一种微型电子组件排料转移定位装置及其工作方法
JP2025015221A (ja) * 2023-07-20 2025-01-30 株式会社ニューフレアテクノロジー ステージ位置計測システムの非線形誤差測定方法

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US5561606A (en) * 1991-08-30 1996-10-01 Nikon Corporation Method for aligning shot areas on a substrate
JP3287047B2 (ja) * 1993-02-08 2002-05-27 株式会社ニコン 位置合わせ方法、その位置合わせ方法を用いた露光方法、その露光方法を用いたデバイス製造方法、そのデバイス製造方法で製造されたデバイス、並びに位置合わせ装置、その位置合わせ装置を備えた露光装置
US5525808A (en) * 1992-01-23 1996-06-11 Nikon Corporaton Alignment method and alignment apparatus with a statistic calculation using a plurality of weighted coordinate positions
JP3219217B2 (ja) * 1993-01-22 2001-10-15 株式会社ニコン 位置合わせ方法及び装置、並びに露光方法及び装置
JP3258178B2 (ja) * 1994-09-27 2002-02-18 株式会社東芝 位置合わせ方法
JPH09115817A (ja) 1995-10-13 1997-05-02 Nikon Corp 露光方法及び装置
JP3634487B2 (ja) * 1996-02-09 2005-03-30 キヤノン株式会社 位置合せ方法、位置合せ装置、および露光装置
JP3595707B2 (ja) * 1998-10-23 2004-12-02 キヤノン株式会社 露光装置および露光方法

Also Published As

Publication number Publication date
WO2004077534A1 (ja) 2004-09-10
CN1751378A (zh) 2006-03-22
JP2004265957A (ja) 2004-09-24
EP1603153B1 (en) 2013-05-01
KR101022680B1 (ko) 2011-03-22
TW200507136A (en) 2005-02-16
EP1603153A1 (en) 2005-12-07
CN1751378B (zh) 2010-06-23
KR20050098963A (ko) 2005-10-12
US20060040191A1 (en) 2006-02-23
EP1603153A4 (en) 2008-07-09

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MM4A Annulment or lapse of patent due to non-payment of fees