KR101018668B1 - 산소 또는 질소로 종단된 실리콘 나노 결정 구조체의형성방법과 이것에 의해 형성된 산소 또는 질소로 종단된실리콘 나노 결정 구조체 - Google Patents

산소 또는 질소로 종단된 실리콘 나노 결정 구조체의형성방법과 이것에 의해 형성된 산소 또는 질소로 종단된실리콘 나노 결정 구조체 Download PDF

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KR101018668B1
KR101018668B1 KR1020030057863A KR20030057863A KR101018668B1 KR 101018668 B1 KR101018668 B1 KR 101018668B1 KR 1020030057863 A KR1020030057863 A KR 1020030057863A KR 20030057863 A KR20030057863 A KR 20030057863A KR 101018668 B1 KR101018668 B1 KR 101018668B1
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South Korea
Prior art keywords
silicon
thin film
plasma
substrate
gas
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KR1020030057863A
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English (en)
Korean (ko)
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KR20040018182A (ko
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요이치로 누마사와
유키노부 무라오
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캐논 아네르바 가부시키가이샤
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Publication of KR20040018182A publication Critical patent/KR20040018182A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/814—Group IV based elements and compounds, e.g. CxSiyGez, porous silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
  • Silicon Compounds (AREA)
  • Luminescent Compositions (AREA)
  • Formation Of Insulating Films (AREA)
KR1020030057863A 2002-08-23 2003-08-21 산소 또는 질소로 종단된 실리콘 나노 결정 구조체의형성방법과 이것에 의해 형성된 산소 또는 질소로 종단된실리콘 나노 결정 구조체 KR101018668B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00243342 2002-08-23
JP2002243342A JP4405715B2 (ja) 2002-08-23 2002-08-23 酸素あるいは窒素で終端されたシリコンナノ結晶構造体の形成方法とこれにより形成された酸素あるいは窒素で終端されたシリコンナノ結晶構造体

Publications (2)

Publication Number Publication Date
KR20040018182A KR20040018182A (ko) 2004-03-02
KR101018668B1 true KR101018668B1 (ko) 2011-03-04

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KR1020030057863A KR101018668B1 (ko) 2002-08-23 2003-08-21 산소 또는 질소로 종단된 실리콘 나노 결정 구조체의형성방법과 이것에 의해 형성된 산소 또는 질소로 종단된실리콘 나노 결정 구조체

Country Status (3)

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US (3) US20060276055A1 (ja)
JP (1) JP4405715B2 (ja)
KR (1) KR101018668B1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100698014B1 (ko) 2004-11-04 2007-03-23 한국전자통신연구원 발광 소자용 실리콘 질화막, 이를 이용한 발광 소자 및발광 소자용 실리콘 질화막의 제조방법
WO2006121870A2 (en) * 2005-05-09 2006-11-16 Vesta Research, Ltd. Silicon nanosponge particles
JP5424638B2 (ja) * 2005-05-27 2014-02-26 ザ・ガバナーズ・オブ・ザ・ユニバーシティー・オブ・アルバータ ＳｉＯ２中のナノ結晶ケイ素および独立ケイ素ナノ粒子の調製方法
KR100722776B1 (ko) * 2005-07-29 2007-05-30 삼성전자주식회사 원자층 증착 공정을 이용한 실리콘 리치 나노-크리스탈구조물의 형성 방법 및 이를 이용한 불휘발성 반도체장치의 제조 방법
JP2007043147A (ja) 2005-07-29 2007-02-15 Samsung Electronics Co Ltd 原子層蒸着工程を用いたシリコンリッチナノクリスタル構造物の形成方法及びこれを用いた不揮発性半導体装置の製造方法
JP4529855B2 (ja) 2005-09-26 2010-08-25 日新電機株式会社 シリコン物体形成方法及び装置
JP4434115B2 (ja) 2005-09-26 2010-03-17 日新電機株式会社 結晶性シリコン薄膜の形成方法及び装置
KR100659280B1 (ko) * 2005-11-26 2006-12-19 학교법인 포항공과대학교 실리콘 기반 나노 구조물 내부에 실리콘 나노결정립 제조방법
JP5268249B2 (ja) * 2005-12-14 2013-08-21 キヤノン株式会社 有機発光素子の製造方法
RU2526344C1 (ru) * 2013-01-10 2014-08-20 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" КОНВЕРТЕР ВАКУУМНОГО УЛЬТРАФИОЛЕТОВОГО ИЗЛУЧЕНИЯ В ИЗЛУЧЕНИЕ ВИДИМОГО ДИАПАЗОНА В ВИДЕ АМОРФНОЙ ПЛЕНКИ ОКСИДА КРЕМНИЯ SiOX НА КРЕМНИЕВОЙ ПОДЛОЖКЕ
RU2534173C2 (ru) * 2013-01-10 2014-11-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" СПОСОБ ПОЛУЧЕНИЯ КОНВЕРТЕРА ВАКУУМНОГО УЛЬТРАФИОЛЕТОВОГО ИЗЛУЧЕНИЯ В ИЗЛУЧЕНИЕ ВИДИМОГО ДИАПАЗОНА В ВИДЕ АМОРФНОЙ ПЛЕНКИ ОКСИДА КРЕМНИЯ SiOХ НА КРЕМНИЕВОЙ ПОДЛОЖКЕ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090666A (en) * 1997-09-30 2000-07-18 Sharp Kabushiki Kaisha Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal
US6887725B2 (en) * 2000-05-23 2005-05-03 Japan Science And Technology Agency Micro electron gun of quantum size effect type and flat display using such electron guns as well as methods of their manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4505072B2 (ja) 1999-03-25 2010-07-14 独立行政法人科学技術振興機構 化学蒸着方法及び化学蒸着装置
JP4251256B2 (ja) 2000-08-21 2009-04-08 富士電機システムズ株式会社 微結晶膜の製造方法
JP2002100578A (ja) 2000-09-25 2002-04-05 Crystage Co Ltd 薄膜形成装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090666A (en) * 1997-09-30 2000-07-18 Sharp Kabushiki Kaisha Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal
US6887725B2 (en) * 2000-05-23 2005-05-03 Japan Science And Technology Agency Micro electron gun of quantum size effect type and flat display using such electron guns as well as methods of their manufacture

Also Published As

Publication number Publication date
US7589002B2 (en) 2009-09-15
KR20040018182A (ko) 2004-03-02
US20060276055A1 (en) 2006-12-07
JP4405715B2 (ja) 2010-01-27
US20080230781A1 (en) 2008-09-25
JP2004083299A (ja) 2004-03-18
US20070262307A1 (en) 2007-11-15

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