KR101015116B1 - 하전(荷電) 입자 빔 시스템 - Google Patents

하전(荷電) 입자 빔 시스템 Download PDF

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Publication number
KR101015116B1
KR101015116B1 KR1020057004615A KR20057004615A KR101015116B1 KR 101015116 B1 KR101015116 B1 KR 101015116B1 KR 1020057004615 A KR1020057004615 A KR 1020057004615A KR 20057004615 A KR20057004615 A KR 20057004615A KR 101015116 B1 KR101015116 B1 KR 101015116B1
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South Korea
Prior art keywords
gas
detector
charged particle
pressure
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KR1020057004615A
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English (en)
Korean (ko)
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KR20050050658A (ko
Inventor
다이앤 케이. 스튜어트
랄프 더블유. 놀스
브라이언 티. 킴밸
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에프이아이 컴파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H01J2237/0045—Neutralising arrangements of objects being observed or treated using secondary electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2602—Details
    • H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Vapour Deposition (AREA)
  • Measurement Of Radiation (AREA)
KR1020057004615A 2002-09-18 2003-09-18 하전(荷電) 입자 빔 시스템 Expired - Lifetime KR101015116B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US41169902P 2002-09-18 2002-09-18
US60/411,699 2002-09-18
US33069102A 2002-12-27 2002-12-27
US10/330,691 2002-12-27

Publications (2)

Publication Number Publication Date
KR20050050658A KR20050050658A (ko) 2005-05-31
KR101015116B1 true KR101015116B1 (ko) 2011-02-16

Family

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KR1020057004615A Expired - Lifetime KR101015116B1 (ko) 2002-09-18 2003-09-18 하전(荷電) 입자 빔 시스템

Country Status (6)

Country Link
US (1) US6972412B2 (enExample)
EP (3) EP1540693A4 (enExample)
JP (2) JP4520303B2 (enExample)
KR (1) KR101015116B1 (enExample)
AU (2) AU2003276900A1 (enExample)
WO (2) WO2004027808A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7157718B2 (en) * 2004-04-30 2007-01-02 The Regents Of The University Of Michigan Microfabricated radiation detector assemblies methods of making and using same and interface circuit for use therewith
JP4519567B2 (ja) * 2004-08-11 2010-08-04 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡およびこれを用いた試料観察方法
ATE532203T1 (de) * 2004-08-27 2011-11-15 Fei Co Lokalisierte plasmabehandlung
JP4636897B2 (ja) * 2005-02-18 2011-02-23 株式会社日立ハイテクサイエンスシステムズ 走査電子顕微鏡
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP4911567B2 (ja) * 2005-12-16 2012-04-04 株式会社トプコン 荷電粒子ビーム装置
JP4597077B2 (ja) * 2006-03-14 2010-12-15 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
WO2007117397A2 (en) 2006-03-31 2007-10-18 Fei Company Improved detector for charged particle beam instrument
US7872236B2 (en) * 2007-01-30 2011-01-18 Hermes Microvision, Inc. Charged particle detection devices
WO2008098084A1 (en) 2007-02-06 2008-08-14 Fei Company High pressure charged particle beam system
JP5276860B2 (ja) * 2008-03-13 2013-08-28 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
EP2105944A1 (en) 2008-03-28 2009-09-30 FEI Company Environmental cell for a particle-optical apparatus
US7791020B2 (en) * 2008-03-31 2010-09-07 Fei Company Multistage gas cascade amplifier
KR100961202B1 (ko) 2008-04-29 2010-06-09 주식회사 하이닉스반도체 원자진동을 이용한 불균일 이온주입장치 및 방법
US8981294B2 (en) 2008-07-03 2015-03-17 B-Nano Ltd. Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment
EP2175473B1 (en) * 2008-10-08 2011-03-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle detection apparatus and detection method
US7947953B2 (en) * 2008-10-08 2011-05-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle detection apparatus and detection method
JP4913854B2 (ja) * 2008-10-08 2012-04-11 アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー 荷電粒子検出装置及び検出方法
US7960697B2 (en) * 2008-10-23 2011-06-14 Hermes-Microvision, Inc. Electron beam apparatus
US8299432B2 (en) * 2008-11-04 2012-10-30 Fei Company Scanning transmission electron microscope using gas amplification
US7919760B2 (en) * 2008-12-09 2011-04-05 Hermes-Microvision, Inc. Operation stage for wafer edge inspection and review
US8094924B2 (en) * 2008-12-15 2012-01-10 Hermes-Microvision, Inc. E-beam defect review system
US9679741B2 (en) 2010-11-09 2017-06-13 Fei Company Environmental cell for charged particle beam system
US8604427B2 (en) * 2012-02-02 2013-12-10 Applied Materials Israel, Ltd. Three-dimensional mapping using scanning electron microscope images
CN104508791B (zh) * 2012-07-30 2017-03-01 Fei 公司 环境扫描电子显微镜气体喷射系统
EP2959287A4 (en) * 2013-02-20 2016-10-19 Nano Ltd B scanning Electron Microscope
US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
US9418819B2 (en) 2013-09-06 2016-08-16 Kla-Tencor Corporation Asymmetrical detector design and methodology
US9715724B2 (en) 2014-07-29 2017-07-25 Applied Materials Israel Ltd. Registration of CAD data with SEM images
US9633816B2 (en) 2015-05-18 2017-04-25 Fei Company Electron beam microscope with improved imaging gas and method of use
KR101693539B1 (ko) * 2015-11-12 2017-01-06 한국표준과학연구원 고분해능 광-전자 융합현미경
EP3249676B1 (en) 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
KR20200013567A (ko) * 2018-11-19 2020-02-07 부경호 극자외선(euv) 노광에 사용되는 마스크 및 극자외선 노광방법
US11152189B2 (en) 2020-03-18 2021-10-19 Fei Company Method and system for plasma assisted low vacuum charged-particle microscopy
DE102020123567B4 (de) * 2020-09-09 2025-02-13 Carl Zeiss Multisem Gmbh Vielzahl-Teilchenstrahl-System mit Kontrast-Korrektur-Linsen-System

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04192246A (ja) * 1990-11-26 1992-07-10 Nikon Corp 環境制御型走査電子顕微鏡
WO1999039367A1 (en) 1998-01-29 1999-08-05 Fei Company Gaseous backscattered electron detector for an environmental scanning electron microscope
WO2002005309A1 (de) 2000-07-07 2002-01-17 Leo Elektronenmikroskopie Gmbh Detektor für variierende druckbereiche und elektronenmikroskop mit einem entsprechenden detektor

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249077A (en) * 1978-08-04 1981-02-03 Crawford Charles K Ion charge neutralization for electron beam devices
US4639301B2 (en) 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
EP0275306B1 (en) * 1986-08-01 1990-10-24 Electro-Scan Corporation Multipurpose gaseous detector device for electron microscopes
US4785182A (en) 1987-05-21 1988-11-15 Electroscan Corporation Secondary electron detector for use in a gaseous atmosphere
JPH05174768A (ja) 1991-02-26 1993-07-13 Nikon Corp 環境制御型走査電子顕微鏡
JP3148353B2 (ja) * 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JPH0547331A (ja) * 1991-08-20 1993-02-26 Nikon Corp 走査電子顕微鏡
JP2919170B2 (ja) * 1992-03-19 1999-07-12 株式会社日立製作所 走査電子顕微鏡
US5184525A (en) * 1992-04-15 1993-02-09 The Perkin-Elmer Corporation Mechanism for positioning a carrier
JPH0594941U (ja) * 1992-05-27 1993-12-24 日新電機株式会社 Ｅ×ｂ回転照射装置
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
US5396067A (en) * 1992-06-11 1995-03-07 Nikon Corporation Scan type electron microscope
JPH0660841A (ja) * 1992-06-11 1994-03-04 Nikon Corp 走査型電子顕微鏡
JPH06168695A (ja) * 1992-11-30 1994-06-14 Nikon Corp 荷電粒子顕微鏡
US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
JP3559678B2 (ja) * 1997-04-09 2004-09-02 株式会社日立製作所 電位測定方法及びその装置並びに導通検査方法及びその装置
WO1999005506A1 (fr) * 1997-07-22 1999-02-04 Hitachi, Ltd. Procede et dispositif de preparation d'echantillons
AU748781B2 (en) * 1997-12-08 2002-06-13 Fei Company Environmental SEM with a magnetic field for improved secondary electron detection
EP0958590B1 (en) 1997-12-08 2003-06-11 Fei Company Environmental sem with multipole fields for improved secondary electron detection
US6525317B1 (en) 1998-12-30 2003-02-25 Micron Technology Inc. Reduction of charging effect and carbon deposition caused by electron beam devices
JP2001155675A (ja) * 1999-11-25 2001-06-08 Hitachi Ltd 走査電子顕微鏡等の低真空二次電子検出装置
JP5005866B2 (ja) * 1999-11-29 2012-08-22 カール・ツァイス・エヌティーエス・ゲーエムベーハー 可変の圧力を有する走査電子顕微鏡用の検出器および該検出器を有する走査電子顕微鏡
JP2002289129A (ja) * 2001-03-26 2002-10-04 Jeol Ltd 低真空走査電子顕微鏡

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04192246A (ja) * 1990-11-26 1992-07-10 Nikon Corp 環境制御型走査電子顕微鏡
WO1999039367A1 (en) 1998-01-29 1999-08-05 Fei Company Gaseous backscattered electron detector for an environmental scanning electron microscope
WO2002005309A1 (de) 2000-07-07 2002-01-17 Leo Elektronenmikroskopie Gmbh Detektor für variierende druckbereiche und elektronenmikroskop mit einem entsprechenden detektor

Also Published As

Publication number Publication date
AU2003275028A8 (en) 2004-04-08
KR20050050658A (ko) 2005-05-31
JP2005539360A (ja) 2005-12-22
EP1540693A2 (en) 2005-06-15
EP1540693A4 (en) 2010-06-09
US6972412B2 (en) 2005-12-06
EP1540692A2 (en) 2005-06-15
WO2004027809A2 (en) 2004-04-01
US20040124356A1 (en) 2004-07-01
WO2004027808A2 (en) 2004-04-01
JP4520303B2 (ja) 2010-08-04
AU2003276900A8 (en) 2004-04-08
AU2003275028A1 (en) 2004-04-08
AU2003276900A1 (en) 2004-04-08
EP1540692B1 (en) 2013-11-06
WO2004027808A3 (en) 2004-07-08
WO2004027809A3 (en) 2004-07-29
EP2372743A3 (en) 2014-05-14
EP2372743A2 (en) 2011-10-05
EP2372743B1 (en) 2016-03-23
EP1540692A4 (en) 2009-04-22
JP4616938B2 (ja) 2011-01-19
JP2005539359A (ja) 2005-12-22

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