JP4520303B2 - 荷電粒子ビームシステム - Google Patents

荷電粒子ビームシステム Download PDF

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Publication number
JP4520303B2
JP4520303B2 JP2004538208A JP2004538208A JP4520303B2 JP 4520303 B2 JP4520303 B2 JP 4520303B2 JP 2004538208 A JP2004538208 A JP 2004538208A JP 2004538208 A JP2004538208 A JP 2004538208A JP 4520303 B2 JP4520303 B2 JP 4520303B2
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Japan
Prior art keywords
detector
gas
charged particle
pressure
particle beam
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Expired - Lifetime
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JP2004538208A
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Japanese (ja)
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JP2005539360A (ja
Inventor
ダイアン・ケイ・スチュアート
ラルフ・ダブリュー・ノウレス
ブライアン・ティー・キンボール
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エフ・イ−・アイ・カンパニー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H01J2237/0045—Neutralising arrangements of objects being observed or treated using secondary electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2602—Details
    • H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Vapour Deposition (AREA)
  • Measurement Of Radiation (AREA)
JP2004538208A 2002-09-18 2003-09-18 荷電粒子ビームシステム Expired - Lifetime JP4520303B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41169902P 2002-09-18 2002-09-18
US33069102A 2002-12-27 2002-12-27
PCT/US2003/029447 WO2004027809A2 (en) 2002-09-18 2003-09-18 Charged particle beam system

Publications (2)

Publication Number Publication Date
JP2005539360A JP2005539360A (ja) 2005-12-22
JP4520303B2 true JP4520303B2 (ja) 2010-08-04

Family

ID=32033317

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004538208A Expired - Lifetime JP4520303B2 (ja) 2002-09-18 2003-09-18 荷電粒子ビームシステム
JP2004538207A Expired - Lifetime JP4616938B2 (ja) 2002-09-18 2003-09-18 環境走査電子顕微鏡および検出器

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2004538207A Expired - Lifetime JP4616938B2 (ja) 2002-09-18 2003-09-18 環境走査電子顕微鏡および検出器

Country Status (6)

Country Link
US (1) US6972412B2 (enExample)
EP (3) EP1540693A4 (enExample)
JP (2) JP4520303B2 (enExample)
KR (1) KR101015116B1 (enExample)
AU (2) AU2003276900A1 (enExample)
WO (2) WO2004027808A2 (enExample)

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JP4911567B2 (ja) * 2005-12-16 2012-04-04 株式会社トプコン 荷電粒子ビーム装置
JP4597077B2 (ja) * 2006-03-14 2010-12-15 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
WO2007117397A2 (en) 2006-03-31 2007-10-18 Fei Company Improved detector for charged particle beam instrument
US7872236B2 (en) * 2007-01-30 2011-01-18 Hermes Microvision, Inc. Charged particle detection devices
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JP5276860B2 (ja) * 2008-03-13 2013-08-28 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
EP2105944A1 (en) 2008-03-28 2009-09-30 FEI Company Environmental cell for a particle-optical apparatus
US7791020B2 (en) * 2008-03-31 2010-09-07 Fei Company Multistage gas cascade amplifier
KR100961202B1 (ko) 2008-04-29 2010-06-09 주식회사 하이닉스반도체 원자진동을 이용한 불균일 이온주입장치 및 방법
US8981294B2 (en) 2008-07-03 2015-03-17 B-Nano Ltd. Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment
EP2175473B1 (en) * 2008-10-08 2011-03-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle detection apparatus and detection method
US7947953B2 (en) * 2008-10-08 2011-05-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle detection apparatus and detection method
JP4913854B2 (ja) * 2008-10-08 2012-04-11 アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー 荷電粒子検出装置及び検出方法
US7960697B2 (en) * 2008-10-23 2011-06-14 Hermes-Microvision, Inc. Electron beam apparatus
US8299432B2 (en) * 2008-11-04 2012-10-30 Fei Company Scanning transmission electron microscope using gas amplification
US7919760B2 (en) * 2008-12-09 2011-04-05 Hermes-Microvision, Inc. Operation stage for wafer edge inspection and review
US8094924B2 (en) * 2008-12-15 2012-01-10 Hermes-Microvision, Inc. E-beam defect review system
US9679741B2 (en) 2010-11-09 2017-06-13 Fei Company Environmental cell for charged particle beam system
US8604427B2 (en) * 2012-02-02 2013-12-10 Applied Materials Israel, Ltd. Three-dimensional mapping using scanning electron microscope images
CN104508791B (zh) * 2012-07-30 2017-03-01 Fei 公司 环境扫描电子显微镜气体喷射系统
EP2959287A4 (en) * 2013-02-20 2016-10-19 Nano Ltd B scanning Electron Microscope
US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
US9418819B2 (en) 2013-09-06 2016-08-16 Kla-Tencor Corporation Asymmetrical detector design and methodology
US9715724B2 (en) 2014-07-29 2017-07-25 Applied Materials Israel Ltd. Registration of CAD data with SEM images
US9633816B2 (en) 2015-05-18 2017-04-25 Fei Company Electron beam microscope with improved imaging gas and method of use
KR101693539B1 (ko) * 2015-11-12 2017-01-06 한국표준과학연구원 고분해능 광-전자 융합현미경
EP3249676B1 (en) 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
KR20200013567A (ko) * 2018-11-19 2020-02-07 부경호 극자외선(euv) 노광에 사용되는 마스크 및 극자외선 노광방법
US11152189B2 (en) 2020-03-18 2021-10-19 Fei Company Method and system for plasma assisted low vacuum charged-particle microscopy
DE102020123567B4 (de) * 2020-09-09 2025-02-13 Carl Zeiss Multisem Gmbh Vielzahl-Teilchenstrahl-System mit Kontrast-Korrektur-Linsen-System

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Also Published As

Publication number Publication date
AU2003275028A8 (en) 2004-04-08
KR20050050658A (ko) 2005-05-31
KR101015116B1 (ko) 2011-02-16
JP2005539360A (ja) 2005-12-22
EP1540693A2 (en) 2005-06-15
EP1540693A4 (en) 2010-06-09
US6972412B2 (en) 2005-12-06
EP1540692A2 (en) 2005-06-15
WO2004027809A2 (en) 2004-04-01
US20040124356A1 (en) 2004-07-01
WO2004027808A2 (en) 2004-04-01
AU2003276900A8 (en) 2004-04-08
AU2003275028A1 (en) 2004-04-08
AU2003276900A1 (en) 2004-04-08
EP1540692B1 (en) 2013-11-06
WO2004027808A3 (en) 2004-07-08
WO2004027809A3 (en) 2004-07-29
EP2372743A3 (en) 2014-05-14
EP2372743A2 (en) 2011-10-05
EP2372743B1 (en) 2016-03-23
EP1540692A4 (en) 2009-04-22
JP4616938B2 (ja) 2011-01-19
JP2005539359A (ja) 2005-12-22

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