AU2003276900A1 - Charged particle beam system - Google Patents

Charged particle beam system

Info

Publication number
AU2003276900A1
AU2003276900A1 AU2003276900A AU2003276900A AU2003276900A1 AU 2003276900 A1 AU2003276900 A1 AU 2003276900A1 AU 2003276900 A AU2003276900 A AU 2003276900A AU 2003276900 A AU2003276900 A AU 2003276900A AU 2003276900 A1 AU2003276900 A1 AU 2003276900A1
Authority
AU
Australia
Prior art keywords
charged particle
particle beam
beam system
charged
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003276900A
Other languages
English (en)
Other versions
AU2003276900A8 (en
Inventor
Brian T. Kimball
Ralph W. Knowles
Diane K. Stewart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of AU2003276900A1 publication Critical patent/AU2003276900A1/en
Publication of AU2003276900A8 publication Critical patent/AU2003276900A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H01J2237/0045—Neutralising arrangements of objects being observed or treated using secondary electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2602—Details
    • H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Vapour Deposition (AREA)
  • Measurement Of Radiation (AREA)
AU2003276900A 2002-09-18 2003-09-18 Charged particle beam system Abandoned AU2003276900A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41169902P 2002-09-18 2002-09-18
US60/411,699 2002-09-18
US33069102A 2002-12-27 2002-12-27
US10/330,691 2002-12-27
PCT/US2003/029447 WO2004027809A2 (en) 2002-09-18 2003-09-18 Charged particle beam system

Publications (2)

Publication Number Publication Date
AU2003276900A1 true AU2003276900A1 (en) 2004-04-08
AU2003276900A8 AU2003276900A8 (en) 2004-04-08

Family

ID=32033317

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2003276900A Abandoned AU2003276900A1 (en) 2002-09-18 2003-09-18 Charged particle beam system
AU2003275028A Abandoned AU2003275028A1 (en) 2002-09-18 2003-09-18 Particle-optical device and detection means

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2003275028A Abandoned AU2003275028A1 (en) 2002-09-18 2003-09-18 Particle-optical device and detection means

Country Status (6)

Country Link
US (1) US6972412B2 (enExample)
EP (3) EP2372743B1 (enExample)
JP (2) JP4520303B2 (enExample)
KR (1) KR101015116B1 (enExample)
AU (2) AU2003276900A1 (enExample)
WO (2) WO2004027808A2 (enExample)

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EP1630849B1 (en) * 2004-08-27 2011-11-02 Fei Company Localized plasma processing
JP4636897B2 (ja) * 2005-02-18 2011-02-23 株式会社日立ハイテクサイエンスシステムズ 走査電子顕微鏡
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP4911567B2 (ja) * 2005-12-16 2012-04-04 株式会社トプコン 荷電粒子ビーム装置
JP4597077B2 (ja) * 2006-03-14 2010-12-15 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
WO2007117397A2 (en) 2006-03-31 2007-10-18 Fei Company Improved detector for charged particle beam instrument
US7872236B2 (en) * 2007-01-30 2011-01-18 Hermes Microvision, Inc. Charged particle detection devices
EP2109873B1 (en) 2007-02-06 2017-04-05 FEI Company High pressure charged particle beam system
JP5276860B2 (ja) * 2008-03-13 2013-08-28 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
EP2105944A1 (en) 2008-03-28 2009-09-30 FEI Company Environmental cell for a particle-optical apparatus
US7791020B2 (en) 2008-03-31 2010-09-07 Fei Company Multistage gas cascade amplifier
KR100961202B1 (ko) 2008-04-29 2010-06-09 주식회사 하이닉스반도체 원자진동을 이용한 불균일 이온주입장치 및 방법
US8981294B2 (en) 2008-07-03 2015-03-17 B-Nano Ltd. Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment
JP4913854B2 (ja) * 2008-10-08 2012-04-11 アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー 荷電粒子検出装置及び検出方法
US7947953B2 (en) * 2008-10-08 2011-05-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle detection apparatus and detection method
EP2175473B1 (en) * 2008-10-08 2011-03-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle detection apparatus and detection method
US7960697B2 (en) * 2008-10-23 2011-06-14 Hermes-Microvision, Inc. Electron beam apparatus
US8299432B2 (en) * 2008-11-04 2012-10-30 Fei Company Scanning transmission electron microscope using gas amplification
US7919760B2 (en) * 2008-12-09 2011-04-05 Hermes-Microvision, Inc. Operation stage for wafer edge inspection and review
US8094924B2 (en) * 2008-12-15 2012-01-10 Hermes-Microvision, Inc. E-beam defect review system
US9679741B2 (en) 2010-11-09 2017-06-13 Fei Company Environmental cell for charged particle beam system
US8604427B2 (en) * 2012-02-02 2013-12-10 Applied Materials Israel, Ltd. Three-dimensional mapping using scanning electron microscope images
EP2880675A4 (en) * 2012-07-30 2016-03-30 Fei Co ELECTRONIC MICROSCOPE GAS INJECTION SYSTEM WITH ENVIRONMENTAL SCAN (SEM)
CN105143866A (zh) * 2013-02-20 2015-12-09 B-纳米股份有限公司 扫描电子显微镜
US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
US9418819B2 (en) 2013-09-06 2016-08-16 Kla-Tencor Corporation Asymmetrical detector design and methodology
US9715724B2 (en) 2014-07-29 2017-07-25 Applied Materials Israel Ltd. Registration of CAD data with SEM images
US9633816B2 (en) 2015-05-18 2017-04-25 Fei Company Electron beam microscope with improved imaging gas and method of use
KR101693539B1 (ko) * 2015-11-12 2017-01-06 한국표준과학연구원 고분해능 광-전자 융합현미경
EP3249676B1 (en) 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
KR20200013567A (ko) * 2018-11-19 2020-02-07 부경호 극자외선(euv) 노광에 사용되는 마스크 및 극자외선 노광방법
US11152189B2 (en) * 2020-03-18 2021-10-19 Fei Company Method and system for plasma assisted low vacuum charged-particle microscopy
DE102020123567B4 (de) * 2020-09-09 2025-02-13 Carl Zeiss Multisem Gmbh Vielzahl-Teilchenstrahl-System mit Kontrast-Korrektur-Linsen-System

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US4639301B2 (en) 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
JPH0687410B2 (ja) * 1986-08-01 1994-11-02 エレクトロ‐スキャン コーポレーション 走査電子顕微鏡及び試料の表面を電子顕微鏡的に像形成する方法
US4785182A (en) 1987-05-21 1988-11-15 Electroscan Corporation Secondary electron detector for use in a gaseous atmosphere
JP3038901B2 (ja) * 1990-11-26 2000-05-08 株式会社ニコン 環境制御型走査電子顕微鏡
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JP3148353B2 (ja) * 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JPH0547331A (ja) * 1991-08-20 1993-02-26 Nikon Corp 走査電子顕微鏡
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US5184525A (en) * 1992-04-15 1993-02-09 The Perkin-Elmer Corporation Mechanism for positioning a carrier
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JPH0594941U (ja) * 1992-05-27 1993-12-24 日新電機株式会社 Ｅ×ｂ回転照射装置
JPH0660841A (ja) * 1992-06-11 1994-03-04 Nikon Corp 走査型電子顕微鏡
US5396067A (en) * 1992-06-11 1995-03-07 Nikon Corporation Scan type electron microscope
JPH06168695A (ja) * 1992-11-30 1994-06-14 Nikon Corp 荷電粒子顕微鏡
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JP3547143B2 (ja) * 1997-07-22 2004-07-28 株式会社日立製作所 試料作製方法
WO1999030345A1 (en) * 1997-12-08 1999-06-17 Philips Electron Optics B.V. Environmental sem with a magnetic field for improved secondary electron detection
JP4084427B2 (ja) * 1997-12-08 2008-04-30 エフ イー アイ カンパニ 改善された２次電子検出のための多極界を用いた環境制御型ｓｅｍ
US5945672A (en) * 1998-01-29 1999-08-31 Fei Company Gaseous backscattered electron detector for an environmental scanning electron microscope
US6525317B1 (en) * 1998-12-30 2003-02-25 Micron Technology Inc. Reduction of charging effect and carbon deposition caused by electron beam devices
JP2001155675A (ja) * 1999-11-25 2001-06-08 Hitachi Ltd 走査電子顕微鏡等の低真空二次電子検出装置
EP1236220B8 (de) * 1999-11-29 2013-02-20 Carl Zeiss Microscopy GmbH Detektor für ein rasterelektronenmikroskop mit variablem druck und rasterelektronenmikroskop mit einem solchen detektor
CZ302126B6 (cs) * 2000-07-07 2010-11-03 Leo Elektronenmikroskopie Gmbh Detektor pro prístroje vyzarující korpuskulární zárení, prístroj vyzarující korpuskulární zárení a zpusob detekování existence produktu vzájemného pusobení v tomto prístroji
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Also Published As

Publication number Publication date
WO2004027808A2 (en) 2004-04-01
US20040124356A1 (en) 2004-07-01
EP1540693A4 (en) 2010-06-09
EP2372743A2 (en) 2011-10-05
EP2372743A3 (en) 2014-05-14
KR20050050658A (ko) 2005-05-31
US6972412B2 (en) 2005-12-06
AU2003276900A8 (en) 2004-04-08
EP1540692B1 (en) 2013-11-06
JP4616938B2 (ja) 2011-01-19
JP4520303B2 (ja) 2010-08-04
WO2004027808A3 (en) 2004-07-08
WO2004027809A3 (en) 2004-07-29
WO2004027809A2 (en) 2004-04-01
JP2005539359A (ja) 2005-12-22
EP2372743B1 (en) 2016-03-23
EP1540693A2 (en) 2005-06-15
AU2003275028A1 (en) 2004-04-08
AU2003275028A8 (en) 2004-04-08
EP1540692A2 (en) 2005-06-15
EP1540692A4 (en) 2009-04-22
JP2005539360A (ja) 2005-12-22
KR101015116B1 (ko) 2011-02-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase