KR101002258B1 - 반도체 제조 장치 및 기판 처리 방법 - Google Patents

반도체 제조 장치 및 기판 처리 방법 Download PDF

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KR101002258B1
KR101002258B1 KR1020080085238A KR20080085238A KR101002258B1 KR 101002258 B1 KR101002258 B1 KR 101002258B1 KR 1020080085238 A KR1020080085238 A KR 1020080085238A KR 20080085238 A KR20080085238 A KR 20080085238A KR 101002258 B1 KR101002258 B1 KR 101002258B1
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temperature
value
pressure
substrate
cooling gas
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KR20090026059A (ko
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마사시 스기시타
마사아키 우에노
아키라 하야시다
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020080085238A 2007-09-06 2008-08-29 반도체 제조 장치 및 기판 처리 방법 Active KR101002258B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007231253 2007-09-06
JPJP-P-2007-00231253 2007-09-06
JPJP-P-2008-00170810 2008-06-30
JP2008170810A JP5510991B2 (ja) 2007-09-06 2008-06-30 半導体製造装置及び基板処理方法

Publications (2)

Publication Number Publication Date
KR20090026059A KR20090026059A (ko) 2009-03-11
KR101002258B1 true KR101002258B1 (ko) 2010-12-20

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KR1020080085238A Active KR101002258B1 (ko) 2007-09-06 2008-08-29 반도체 제조 장치 및 기판 처리 방법

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JP (2) JP5510991B2 (https=)
KR (1) KR101002258B1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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JP5394360B2 (ja) 2010-03-10 2014-01-22 東京エレクトロン株式会社 縦型熱処理装置およびその冷却方法
JP5751549B2 (ja) * 2010-03-15 2015-07-22 株式会社日立国際電気 熱処理装置及び半導体の製造方法
WO2012118175A1 (ja) * 2011-03-02 2012-09-07 株式会社ニコン 光学用セラミック材料の熱処理装置、光学用セラミック材料の熱処理方法、合成石英ガラスの熱処理方法、光学系の製造方法、および露光装置の製造方法
JP2014112594A (ja) * 2012-12-05 2014-06-19 Denso Corp スーパージャンクション構造を有する半導体装置の製造方法
US20150370245A1 (en) * 2012-12-07 2015-12-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program
JP6080797B2 (ja) * 2014-04-28 2017-02-15 三菱電機株式会社 不純物拡散装置
JP6579974B2 (ja) * 2015-02-25 2019-09-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、温度センサ及び半導体装置の製造方法
US10228291B2 (en) 2015-02-25 2019-03-12 Kokusai Electric Corporation Substrate processing apparatus, and thermocouple
JP6763740B2 (ja) * 2016-10-18 2020-09-30 太平洋セメント株式会社 噴霧熱分解装置
JP6735686B2 (ja) * 2017-01-20 2020-08-05 東京エレクトロン株式会社 基板処理装置及び基板の冷却方法
JP6752851B2 (ja) * 2017-09-12 2020-09-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クーリングユニット、基板処理装置、および半導体装置の製造方法
KR102255315B1 (ko) * 2019-06-17 2021-05-25 에스케이하이닉스 주식회사 기판 처리장치 및 기판 처리방법
US12392554B2 (en) 2019-06-17 2025-08-19 SK Hynix Inc. Apparatus for processing a substrate and method of operating the same
TWI712105B (zh) * 2019-10-31 2020-12-01 新唐科技股份有限公司 半導體裝置與其製造方法
WO2021194512A1 (en) * 2020-03-27 2021-09-30 Lam Research Corporation Substrate support temperature probe diagnostics and management
JP7754585B2 (ja) * 2021-06-07 2025-10-15 東京エレクトロン株式会社 制御方法及び制御装置
CN114420601B (zh) * 2022-01-11 2025-10-10 北京北方华创微电子装备有限公司 半导体热处理设备及其温度自校准方法
JP7811871B2 (ja) * 2022-03-23 2026-02-06 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP7798442B2 (ja) * 2022-06-23 2026-01-14 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR20250128957A (ko) * 2022-12-26 2025-08-28 가부시키가이샤 코쿠사이 엘렉트릭 온도 제어 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
JP2024137544A (ja) 2023-03-24 2024-10-07 株式会社Kokusai Electric 温度制御システム、半導体装置の製造方法、基板処理装置およびプログラム
JP2025062791A (ja) * 2023-10-03 2025-04-15 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208591A (ja) * 2001-01-09 2002-07-26 Hitachi Kokusai Electric Inc 熱処理装置
KR100567967B1 (ko) * 1997-09-15 2006-05-25 도시바(주) 가스온도측정을이용한반도체웨이퍼온도측정및제어장치와그방법

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JP3177722B2 (ja) * 1993-06-15 2001-06-18 東京エレクトロン株式会社 高速熱処理炉の温度制御装置
JP4358915B2 (ja) * 1997-03-21 2009-11-04 株式会社日立国際電気 半導体製造システム
JP4536214B2 (ja) * 2000-06-01 2010-09-01 東京エレクトロン株式会社 熱処理装置，および熱処理装置の制御方法
JP2002327275A (ja) * 2001-05-02 2002-11-15 Tokyo Electron Ltd 真空処理方法及び真空処理装置
US7006900B2 (en) * 2002-11-14 2006-02-28 Asm International N.V. Hybrid cascade model-based predictive control system
WO2005008755A1 (ja) * 2003-07-18 2005-01-27 Hitachi Kokusai Electric Inc. 温度制御方法、基板処理装置及び半導体製造方法
WO2005010970A1 (ja) * 2003-07-28 2005-02-03 Hitachi Kokusai Electric Inc. 基板処理装置及び基板処理方法
JP4674792B2 (ja) * 2003-12-05 2011-04-20 東京エレクトロン株式会社 静電チャック
JP4516318B2 (ja) * 2004-01-05 2010-08-04 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP4878801B2 (ja) * 2005-09-26 2012-02-15 株式会社日立国際電気 基板処理装置、半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100567967B1 (ko) * 1997-09-15 2006-05-25 도시바(주) 가스온도측정을이용한반도체웨이퍼온도측정및제어장치와그방법
JP2002208591A (ja) * 2001-01-09 2002-07-26 Hitachi Kokusai Electric Inc 熱処理装置

Also Published As

Publication number Publication date
KR20090026059A (ko) 2009-03-11
JP5510991B2 (ja) 2014-06-04
JP2009081415A (ja) 2009-04-16
JP2014042042A (ja) 2014-03-06
JP5665239B2 (ja) 2015-02-04

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