KR100992496B1 - 발광 다이오드 - Google Patents

발광 다이오드 Download PDF

Info

Publication number
KR100992496B1
KR100992496B1 KR1020087021445A KR20087021445A KR100992496B1 KR 100992496 B1 KR100992496 B1 KR 100992496B1 KR 1020087021445 A KR1020087021445 A KR 1020087021445A KR 20087021445 A KR20087021445 A KR 20087021445A KR 100992496 B1 KR100992496 B1 KR 100992496B1
Authority
KR
South Korea
Prior art keywords
light emitting
electrode
emitting diode
layer
light
Prior art date
Application number
KR1020087021445A
Other languages
English (en)
Korean (ko)
Other versions
KR20080091391A (ko
Inventor
쿄우스케 마스야
Original Assignee
쇼와 덴코 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쇼와 덴코 가부시키가이샤 filed Critical 쇼와 덴코 가부시키가이샤
Publication of KR20080091391A publication Critical patent/KR20080091391A/ko
Application granted granted Critical
Publication of KR100992496B1 publication Critical patent/KR100992496B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020087021445A 2006-02-14 2007-02-09 발광 다이오드 KR100992496B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00036169 2006-02-14
JP2006036169A JP5032033B2 (ja) 2006-02-14 2006-02-14 発光ダイオード

Publications (2)

Publication Number Publication Date
KR20080091391A KR20080091391A (ko) 2008-10-10
KR100992496B1 true KR100992496B1 (ko) 2010-11-08

Family

ID=38497700

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087021445A KR100992496B1 (ko) 2006-02-14 2007-02-09 발광 다이오드

Country Status (4)

Country Link
JP (1) JP5032033B2 (zh)
KR (1) KR100992496B1 (zh)
CN (1) CN101490858B (zh)
TW (1) TWI376039B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5205047B2 (ja) * 2007-12-18 2013-06-05 ローム株式会社 半導体発光素子
JP5276959B2 (ja) 2008-11-19 2013-08-28 昭和電工株式会社 発光ダイオード及びその製造方法、並びにランプ
KR101100684B1 (ko) * 2009-07-15 2012-01-03 주식회사 에피밸리 3족 질화물 반도체 발광소자
JP5343018B2 (ja) * 2010-02-08 2013-11-13 昭和電工株式会社 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
JP2013120936A (ja) * 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
JP6352068B2 (ja) 2014-06-20 2018-07-04 日本オクラロ株式会社 光送受信機
KR102306671B1 (ko) * 2015-06-16 2021-09-29 삼성전자주식회사 발광 소자 패키지
CN105742446B (zh) * 2016-04-29 2018-09-04 京东方科技集团股份有限公司 发光元件及其制备方法
CN107482098B (zh) * 2017-09-20 2023-05-09 南昌大学 一种薄膜led芯片结构
US10985022B2 (en) * 2018-10-26 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures having interfacial layers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP2003243709A (ja) * 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP2004128321A (ja) * 2002-10-04 2004-04-22 Matsushita Electric Works Ltd 半導体発光素子
JP3953070B2 (ja) * 2005-03-01 2007-08-01 松下電工株式会社 半導体発光素子

Also Published As

Publication number Publication date
TWI376039B (en) 2012-11-01
JP5032033B2 (ja) 2012-09-26
KR20080091391A (ko) 2008-10-10
JP2007220709A (ja) 2007-08-30
CN101490858A (zh) 2009-07-22
CN101490858B (zh) 2011-06-08
TW200739968A (en) 2007-10-16

Similar Documents

Publication Publication Date Title
US8097892B2 (en) Light-emitting diode
KR100992496B1 (ko) 발광 다이오드
US8022436B2 (en) Light emitting diode, production method thereof and lamp
KR100992497B1 (ko) 발광 다이오드 및 그 제조 방법
JP4974867B2 (ja) 発光ダイオード及びその製造方法
TWI447956B (zh) 發光二極體及其製造方法以及發光二極體燈
KR101290836B1 (ko) 발광 다이오드 및 그의 제조 방법, 및 발광 다이오드 램프
KR101296959B1 (ko) 발광 다이오드, 발광 다이오드 램프 및 조명 장치
WO2011034080A1 (ja) 発光ダイオード、発光ダイオードランプ及び照明装置
JP2010098068A (ja) 発光ダイオード及びその製造方法、並びにランプ
JP5427585B2 (ja) フリップチップ型発光ダイオード及びその製造方法
JP5557649B2 (ja) 発光ダイオード、発光ダイオードランプ及び照明装置
JP5586371B2 (ja) 発光ダイオード、発光ダイオードランプ及び照明装置
JP5557648B2 (ja) 発光ダイオード、発光ダイオードランプ及び照明装置
KR101318492B1 (ko) 발광 다이오드 및 발광 다이오드 램프
JP5876897B2 (ja) 発光ダイオード、発光ダイオードランプ及び照明装置
JP2014158057A (ja) 発光ダイオード、発光ダイオードランプ及び照明装置
JP2014168101A (ja) 発光ダイオード、発光ダイオードランプ及び照明装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20131022

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20141021

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20151016

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee