KR100990064B1 - 식각 공정에서 포토레지스트를 경화하는 방법 및 조성물 - Google Patents

식각 공정에서 포토레지스트를 경화하는 방법 및 조성물 Download PDF

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Publication number
KR100990064B1
KR100990064B1 KR1020057002028A KR20057002028A KR100990064B1 KR 100990064 B1 KR100990064 B1 KR 100990064B1 KR 1020057002028 A KR1020057002028 A KR 1020057002028A KR 20057002028 A KR20057002028 A KR 20057002028A KR 100990064 B1 KR100990064 B1 KR 100990064B1
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South Korea
Prior art keywords
photoresist material
plasma
wafer
curing
etching
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KR1020057002028A
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English (en)
Korean (ko)
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KR20050047091A (ko
Inventor
유선 김 테일러
웬디 뉴옌
크리스 지. 엔. 리
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020057002028A 2002-08-14 2003-07-31 식각 공정에서 포토레지스트를 경화하는 방법 및 조성물 Expired - Fee Related KR100990064B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/219,995 2002-08-14
US10/219,995 US6923920B2 (en) 2002-08-14 2002-08-14 Method and compositions for hardening photoresist in etching processes

Publications (2)

Publication Number Publication Date
KR20050047091A KR20050047091A (ko) 2005-05-19
KR100990064B1 true KR100990064B1 (ko) 2010-10-26

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KR1020057002028A Expired - Fee Related KR100990064B1 (ko) 2002-08-14 2003-07-31 식각 공정에서 포토레지스트를 경화하는 방법 및 조성물

Country Status (8)

Country Link
US (2) US6923920B2 (https=)
EP (1) EP1529308A1 (https=)
JP (1) JP2005535936A (https=)
KR (1) KR100990064B1 (https=)
CN (1) CN100423191C (https=)
AU (1) AU2003257999A1 (https=)
TW (1) TWI307121B (https=)
WO (1) WO2004017390A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6962878B2 (en) * 2003-04-17 2005-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method to reduce photoresist mask line dimensions
US7005386B1 (en) * 2003-09-05 2006-02-28 Advanced Micro Devices, Inc. Method for reducing resist height erosion in a gate etch process
JP2005109068A (ja) * 2003-09-30 2005-04-21 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US20050147926A1 (en) * 2004-01-02 2005-07-07 Nanya Technology Corporation Method for processing photoresist
US20060154184A1 (en) * 2005-01-12 2006-07-13 International Business Machines Corporation Method for reducing feature line edge roughness
KR100674967B1 (ko) * 2005-04-06 2007-01-26 삼성전자주식회사 더블 패터닝 방식을 이용한 미세 피치를 갖는 포토레지스트패턴 형성방법
US7390753B2 (en) * 2005-11-14 2008-06-24 Taiwan Semiconductor Mfg. Co., Ltd. In-situ plasma treatment of advanced resists in fine pattern definition
JP5362176B2 (ja) 2006-06-12 2013-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8298958B2 (en) * 2008-07-17 2012-10-30 Lam Research Corporation Organic line width roughness with H2 plasma treatment
JP5128421B2 (ja) * 2008-09-04 2013-01-23 東京エレクトロン株式会社 プラズマ処理方法およびレジストパターンの改質方法
JP5544914B2 (ja) * 2010-02-15 2014-07-09 大日本印刷株式会社 反射型マスクの製造方法
KR101348655B1 (ko) * 2010-03-24 2014-01-08 한국전자통신연구원 미세유체 제어 장치 및 그 제조 방법
JP5142236B1 (ja) 2011-11-15 2013-02-13 エルシード株式会社 エッチング方法
US9105587B2 (en) * 2012-11-08 2015-08-11 Micron Technology, Inc. Methods of forming semiconductor structures with sulfur dioxide etch chemistries
JP6017928B2 (ja) * 2012-11-09 2016-11-02 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
CN103021925A (zh) * 2012-12-21 2013-04-03 上海宏力半导体制造有限公司 Sti的制作工艺、沟槽的刻蚀方法和光刻胶的处理方法
KR101989707B1 (ko) * 2014-07-08 2019-06-14 도쿄엘렉트론가부시키가이샤 네거티브톤 현상제 겸용 포토레지스트 조성물 및 이용 방법
JP6736314B2 (ja) * 2015-06-30 2020-08-05 エイブリック株式会社 半導体装置の製造方法
CN107564803B (zh) * 2017-08-31 2020-04-17 京东方科技集团股份有限公司 刻蚀方法、工艺设备、薄膜晶体管器件及其制造方法
KR102841479B1 (ko) 2021-05-10 2025-07-31 삼성전자주식회사 반도체 장치의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010018252A1 (en) * 1999-12-30 2001-08-30 Park Won Soung Method for fabricating semiconductor device by using etching polymer
US20010050413A1 (en) * 1999-04-15 2001-12-13 Li Li Method of controlling striations and CD loss in contact oxide etch

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5749389A (en) * 1993-12-22 1998-05-12 Liquid Air Corporation Purgeable connection for gas supply cabinet
US5976769A (en) 1995-07-14 1999-11-02 Texas Instruments Incorporated Intermediate layer lithography
JPH09270420A (ja) 1996-03-29 1997-10-14 Nippon Steel Corp 半導体装置の製造方法
US5843835A (en) 1996-04-01 1998-12-01 Winbond Electronics Corporation Damage free gate dielectric process during gate electrode plasma etching
JP3484317B2 (ja) * 1997-03-19 2004-01-06 沖電気工業株式会社 半導体装置の製造方法
US6103632A (en) 1997-10-22 2000-08-15 Applied Material Inc. In situ Etching of inorganic dielectric anti-reflective coating from a substrate
US6121154A (en) 1997-12-23 2000-09-19 Lam Research Corporation Techniques for etching with a photoresist mask
US6121155A (en) * 1998-12-04 2000-09-19 Advanced Micro Devices Integrated circuit fabrication critical dimension control using self-limiting resist etch
US6299788B1 (en) 1999-03-29 2001-10-09 Mosel Vitelic Inc. Silicon etching process
JP2001237218A (ja) 2000-02-21 2001-08-31 Nec Corp 半導体装置の製造方法
WO2001091167A1 (en) * 2000-05-25 2001-11-29 Toppan Printing Co., Ltd. Substrate for transfer mask, transfer mask, and method of manufacture thereof
US6630288B2 (en) * 2001-03-28 2003-10-07 Advanced Micro Devices, Inc. Process for forming sub-lithographic photoresist features by modification of the photoresist surface
US6673498B1 (en) * 2001-11-02 2004-01-06 Lsi Logic Corporation Method for reticle formation utilizing metal vaporization

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010050413A1 (en) * 1999-04-15 2001-12-13 Li Li Method of controlling striations and CD loss in contact oxide etch
US20010018252A1 (en) * 1999-12-30 2001-08-30 Park Won Soung Method for fabricating semiconductor device by using etching polymer

Also Published As

Publication number Publication date
US6923920B2 (en) 2005-08-02
JP2005535936A (ja) 2005-11-24
US20050230352A1 (en) 2005-10-20
AU2003257999A1 (en) 2004-03-03
TW200407998A (en) 2004-05-16
CN1689142A (zh) 2005-10-26
EP1529308A1 (en) 2005-05-11
KR20050047091A (ko) 2005-05-19
WO2004017390A1 (en) 2004-02-26
CN100423191C (zh) 2008-10-01
US20040079727A1 (en) 2004-04-29
TWI307121B (en) 2009-03-01

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