KR100962044B1 - 저유전 플라즈마 중합체 박막 및 그 제조 방법 - Google Patents

저유전 플라즈마 중합체 박막 및 그 제조 방법 Download PDF

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Publication number
KR100962044B1
KR100962044B1 KR1020070126331A KR20070126331A KR100962044B1 KR 100962044 B1 KR100962044 B1 KR 100962044B1 KR 1020070126331 A KR1020070126331 A KR 1020070126331A KR 20070126331 A KR20070126331 A KR 20070126331A KR 100962044 B1 KR100962044 B1 KR 100962044B1
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KR
South Korea
Prior art keywords
thin film
plasma
formula
low dielectric
heat treatment
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KR1020070126331A
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English (en)
Korean (ko)
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KR20090059462A (ko
Inventor
정동근
이성우
우지형
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성균관대학교산학협력단
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Priority to KR1020070126331A priority Critical patent/KR100962044B1/ko
Priority to US12/228,668 priority patent/US7897521B2/en
Priority to EP08170636A priority patent/EP2070601B1/en
Priority to AT08170636T priority patent/ATE555859T1/de
Priority to CN2008101825701A priority patent/CN101450995B/zh
Publication of KR20090059462A publication Critical patent/KR20090059462A/ko
Application granted granted Critical
Publication of KR100962044B1 publication Critical patent/KR100962044B1/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/20—Manufacture of shaped structures of ion-exchange resins
    • C08J5/22—Films, membranes or diaphragms
    • C08J5/2206—Films, membranes or diaphragms based on organic and/or inorganic macromolecular compounds
    • C08J5/2218—Synthetic macromolecular compounds
    • C08J5/2256—Synthetic macromolecular compounds based on macromolecular compounds obtained by reactions other than those involving carbon-to-carbon bonds, e.g. obtained by polycondensation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/20—Manufacture of shaped structures of ion-exchange resins
    • C08J5/22—Films, membranes or diaphragms
    • C08J5/2287—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/01—Hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
KR1020070126331A 2007-12-06 2007-12-06 저유전 플라즈마 중합체 박막 및 그 제조 방법 KR100962044B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020070126331A KR100962044B1 (ko) 2007-12-06 2007-12-06 저유전 플라즈마 중합체 박막 및 그 제조 방법
US12/228,668 US7897521B2 (en) 2007-12-06 2008-08-14 Low dielectric constant plasma polymerized thin film and manufacturing method thereof
EP08170636A EP2070601B1 (en) 2007-12-06 2008-12-04 Low dielectric constant plasma polymerized thin film and manufacturing method thereof
AT08170636T ATE555859T1 (de) 2007-12-06 2008-12-04 Niederdielektrischer konstanter plasmapolymerisierter dünnfilm und herstellungsverfahren dafür
CN2008101825701A CN101450995B (zh) 2007-12-06 2008-12-05 低介电常数的等离子聚合薄膜及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070126331A KR100962044B1 (ko) 2007-12-06 2007-12-06 저유전 플라즈마 중합체 박막 및 그 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020100005202A Division KR100987183B1 (ko) 2010-01-20 2010-01-20 저유전 플라즈마 중합체 박막 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20090059462A KR20090059462A (ko) 2009-06-11
KR100962044B1 true KR100962044B1 (ko) 2010-06-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070126331A KR100962044B1 (ko) 2007-12-06 2007-12-06 저유전 플라즈마 중합체 박막 및 그 제조 방법

Country Status (5)

Country Link
US (1) US7897521B2 (US07897521-20110301-C00002.png)
EP (1) EP2070601B1 (US07897521-20110301-C00002.png)
KR (1) KR100962044B1 (US07897521-20110301-C00002.png)
CN (1) CN101450995B (US07897521-20110301-C00002.png)
AT (1) ATE555859T1 (US07897521-20110301-C00002.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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EP2744364B1 (en) 2011-08-15 2016-10-26 The Procter and Gamble Company Cosmetic applicators
US9371430B2 (en) 2013-08-19 2016-06-21 Research & Business Foundation Sungkyunkwan University Porous film with high hardness and a low dielectric constant and preparation method thereof
CN110540648A (zh) * 2014-11-07 2019-12-06 中国科学院上海有机化学研究所 含苯并环丁烯基团的有机硅氧烷及其制备和应用
US10351729B2 (en) 2016-03-03 2019-07-16 Motorola Mobility Llc Polysiloxane films and methods of making polysiloxane films
CN108933088B (zh) * 2017-05-25 2020-05-29 上海稷以科技有限公司 一种封装的方法及封装结构
KR102578827B1 (ko) 2018-04-24 2023-09-15 삼성전자주식회사 유연한 유무기 보호막 및 그 제조방법
KR102138102B1 (ko) * 2018-09-05 2020-07-27 성균관대학교산학협력단 저유전 플라즈마 중합체 박막 및 이의 제조 방법

Citations (4)

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US6348725B2 (en) 1998-02-11 2002-02-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US20040082193A1 (en) 2002-10-23 2004-04-29 Applied Materials, Inc Plasma enhanced cvd low k carbon-doped silicon oxide film deposition using vhf-rf power
JP2007221039A (ja) 2006-02-20 2007-08-30 National Institute For Materials Science 絶縁膜および絶縁膜材料

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US6348725B2 (en) 1998-02-11 2002-02-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
US20040082193A1 (en) 2002-10-23 2004-04-29 Applied Materials, Inc Plasma enhanced cvd low k carbon-doped silicon oxide film deposition using vhf-rf power
JP2007221039A (ja) 2006-02-20 2007-08-30 National Institute For Materials Science 絶縁膜および絶縁膜材料

Also Published As

Publication number Publication date
CN101450995B (zh) 2012-05-09
EP2070601B1 (en) 2012-05-02
KR20090059462A (ko) 2009-06-11
EP2070601A2 (en) 2009-06-17
EP2070601A3 (en) 2010-02-24
ATE555859T1 (de) 2012-05-15
US20090054612A1 (en) 2009-02-26
US7897521B2 (en) 2011-03-01
CN101450995A (zh) 2009-06-10

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