ATE555859T1 - Niederdielektrischer konstanter plasmapolymerisierter dünnfilm und herstellungsverfahren dafür - Google Patents
Niederdielektrischer konstanter plasmapolymerisierter dünnfilm und herstellungsverfahren dafürInfo
- Publication number
- ATE555859T1 ATE555859T1 AT08170636T AT08170636T ATE555859T1 AT E555859 T1 ATE555859 T1 AT E555859T1 AT 08170636 T AT08170636 T AT 08170636T AT 08170636 T AT08170636 T AT 08170636T AT E555859 T1 ATE555859 T1 AT E555859T1
- Authority
- AT
- Austria
- Prior art keywords
- thin film
- dielectric constant
- plasma polymerized
- constant plasma
- low dielectric
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/20—Manufacture of shaped structures of ion-exchange resins
- C08J5/22—Films, membranes or diaphragms
- C08J5/2206—Films, membranes or diaphragms based on organic and/or inorganic macromolecular compounds
- C08J5/2218—Synthetic macromolecular compounds
- C08J5/2256—Synthetic macromolecular compounds based on macromolecular compounds obtained by reactions other than those involving carbon-to-carbon bonds, e.g. obtained by polycondensation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/20—Manufacture of shaped structures of ion-exchange resins
- C08J5/22—Films, membranes or diaphragms
- C08J5/2287—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/01—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070126331A KR100962044B1 (ko) | 2007-12-06 | 2007-12-06 | 저유전 플라즈마 중합체 박막 및 그 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE555859T1 true ATE555859T1 (de) | 2012-05-15 |
Family
ID=40382806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08170636T ATE555859T1 (de) | 2007-12-06 | 2008-12-04 | Niederdielektrischer konstanter plasmapolymerisierter dünnfilm und herstellungsverfahren dafür |
Country Status (5)
Country | Link |
---|---|
US (1) | US7897521B2 (de) |
EP (1) | EP2070601B1 (de) |
KR (1) | KR100962044B1 (de) |
CN (1) | CN101450995B (de) |
AT (1) | ATE555859T1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2744364B1 (de) | 2011-08-15 | 2016-10-26 | The Procter and Gamble Company | Kosmetikapplikatoren |
US9371430B2 (en) | 2013-08-19 | 2016-06-21 | Research & Business Foundation Sungkyunkwan University | Porous film with high hardness and a low dielectric constant and preparation method thereof |
CN110540648A (zh) * | 2014-11-07 | 2019-12-06 | 中国科学院上海有机化学研究所 | 含苯并环丁烯基团的有机硅氧烷及其制备和应用 |
US10351729B2 (en) | 2016-03-03 | 2019-07-16 | Motorola Mobility Llc | Polysiloxane films and methods of making polysiloxane films |
CN108933088B (zh) * | 2017-05-25 | 2020-05-29 | 上海稷以科技有限公司 | 一种封装的方法及封装结构 |
KR102578827B1 (ko) | 2018-04-24 | 2023-09-15 | 삼성전자주식회사 | 유연한 유무기 보호막 및 그 제조방법 |
KR102138102B1 (ko) * | 2018-09-05 | 2020-07-27 | 성균관대학교산학협력단 | 저유전 플라즈마 중합체 박막 및 이의 제조 방법 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4894532A (en) * | 1988-03-28 | 1990-01-16 | Westinghouse Electric Corp. | Optical fiber sensor with light absorbing moisture-sensitive coating |
US4877641A (en) * | 1988-05-31 | 1989-10-31 | Olin Corporation | Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate |
US5203956A (en) * | 1990-01-08 | 1993-04-20 | Lsi Logic Corporation | Method for performing in-situ etch of a CVD chamber |
US5288325A (en) * | 1991-03-29 | 1994-02-22 | Nec Corporation | Chemical vapor deposition apparatus |
JP2703694B2 (ja) * | 1992-05-28 | 1998-01-26 | 信越半導体株式会社 | ガス供給装置 |
JPH06240456A (ja) * | 1992-12-21 | 1994-08-30 | Kawasaki Steel Corp | 半導体装置のアルミニウム配線の形成方法及び装置 |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
JPH06333857A (ja) * | 1993-05-27 | 1994-12-02 | Semiconductor Energy Lab Co Ltd | 成膜装置および成膜方法 |
US6303523B2 (en) | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6147009A (en) | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
US6312793B1 (en) * | 1999-05-26 | 2001-11-06 | International Business Machines Corporation | Multiphase low dielectric constant material |
TW425635B (en) * | 1999-08-23 | 2001-03-11 | Promos Technologies Inc | Rapid thermal processing method and its device |
EP1149933A1 (de) * | 2000-04-28 | 2001-10-31 | STMicroelectronics S.r.l. | Prozess zur Abscheidung von dielectrischen Filmen mit niedriger Dielektrizitätskonstante |
DE10034737C2 (de) * | 2000-07-17 | 2002-07-11 | Fraunhofer Ges Forschung | Verfahren zur Herstellung einer permanenten Entformungsschicht durch Plasmapolymerisation auf der Oberfläche eines Formteilwerkzeugs, ein nach dem Verfahren herstellbares Formteilwerkzeug und dessen Verwendung |
US6441491B1 (en) * | 2000-10-25 | 2002-08-27 | International Business Machines Corporation | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same |
US6486082B1 (en) * | 2001-06-18 | 2002-11-26 | Applied Materials, Inc. | CVD plasma assisted lower dielectric constant sicoh film |
KR20030002993A (ko) * | 2001-06-29 | 2003-01-09 | 학교법인 포항공과대학교 | 저유전체 박막의 제조방법 |
US20040058090A1 (en) * | 2001-09-14 | 2004-03-25 | Carlo Waldfried | Low temperature UV pretreating of porous low-k materials |
DE60322347D1 (de) * | 2002-02-05 | 2008-09-04 | Dow Global Technologies Inc | Chemische dampfphasenabscheidung auf einem substrat mittels eines korona-plasmas |
US6797643B2 (en) | 2002-10-23 | 2004-09-28 | Applied Materials Inc. | Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power |
TWI282124B (en) * | 2002-11-28 | 2007-06-01 | Tosoh Corp | Insulating film material containing an organic silane compound, its production method and semiconductor device |
US7288292B2 (en) | 2003-03-18 | 2007-10-30 | International Business Machines Corporation | Ultra low k (ULK) SiCOH film and method |
US20040197474A1 (en) * | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
US8137764B2 (en) | 2003-05-29 | 2012-03-20 | Air Products And Chemicals, Inc. | Mechanical enhancer additives for low dielectric films |
US7611996B2 (en) * | 2004-03-31 | 2009-11-03 | Applied Materials, Inc. | Multi-stage curing of low K nano-porous films |
US7491658B2 (en) * | 2004-10-13 | 2009-02-17 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
US7678712B2 (en) * | 2005-03-22 | 2010-03-16 | Honeywell International, Inc. | Vapor phase treatment of dielectric materials |
US7901743B2 (en) | 2005-09-30 | 2011-03-08 | Tokyo Electron Limited | Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system |
US7381659B2 (en) * | 2005-11-22 | 2008-06-03 | International Business Machines Corporation | Method for reducing film stress for SiCOH low-k dielectric materials |
US20070173071A1 (en) * | 2006-01-20 | 2007-07-26 | International Business Machines Corporation | SiCOH dielectric |
US20070190808A1 (en) | 2006-02-10 | 2007-08-16 | Stowell Michael W | Low-k dielectric layers for large substrates |
JP2007221039A (ja) | 2006-02-20 | 2007-08-30 | National Institute For Materials Science | 絶縁膜および絶縁膜材料 |
KR100845941B1 (ko) | 2007-03-27 | 2008-07-14 | 성균관대학교산학협력단 | 저유전 상수값을 갖는 박막 제조 방법 및 이에 의하여제조된 박막 |
KR100765806B1 (ko) * | 2007-04-23 | 2007-10-15 | 주식회사 아토 | 비정질탄소막 증착 방법 |
-
2007
- 2007-12-06 KR KR1020070126331A patent/KR100962044B1/ko not_active IP Right Cessation
-
2008
- 2008-08-14 US US12/228,668 patent/US7897521B2/en active Active
- 2008-12-04 AT AT08170636T patent/ATE555859T1/de active
- 2008-12-04 EP EP08170636A patent/EP2070601B1/de active Active
- 2008-12-05 CN CN2008101825701A patent/CN101450995B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR100962044B1 (ko) | 2010-06-08 |
CN101450995B (zh) | 2012-05-09 |
EP2070601B1 (de) | 2012-05-02 |
KR20090059462A (ko) | 2009-06-11 |
EP2070601A2 (de) | 2009-06-17 |
EP2070601A3 (de) | 2010-02-24 |
US20090054612A1 (en) | 2009-02-26 |
US7897521B2 (en) | 2011-03-01 |
CN101450995A (zh) | 2009-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE555859T1 (de) | Niederdielektrischer konstanter plasmapolymerisierter dünnfilm und herstellungsverfahren dafür | |
Seong et al. | A surface tailoring method of ultrathin polymer gate dielectrics for organic transistors: improved device performance and the thermal stability thereof | |
Meyers et al. | Solution-processed aluminum oxide phosphate thin-film dielectrics | |
GB201110117D0 (en) | method and device for manufacturing a barrie layer on a flexible substrate | |
NO20085230L (no) | Superledende tynnfilmmateriale og fremgangsmate for fremstilling av superledende tynnfilmmateriale | |
WO2012024114A3 (en) | Methods for forming a hydrogen free silicon containing dielectric film | |
MY198714A (en) | Photovoltaic devices and method of manufacturing | |
WO2008121478A3 (en) | Roll-to-roll plasma enhanced chemical vapor deposition method of barrier layers comprising silicon and carbon | |
WO2013087797A8 (en) | Large area optical quality synthetic polycrystalline diamond window | |
WO2007121383A3 (en) | Method and apparatus to form thin layers of materials on a base | |
TW200610054A (en) | Low temperature process to produce low-k dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD) | |
WO2010112789A3 (fr) | Procede de fabrication d'un dispositif a diode electroluminescente organique avec structure a surface texturee et oled a structure a surface texturee obtenue par ce procede | |
EP2526977A3 (de) | Medizinisches peek Implantat mit verschiedenen Beschichtungen und Verfahren zu seiner herstellung | |
WO2011056418A3 (en) | Fabrication of dual structure ceramics by a single step process | |
MX2011013759A (es) | Pelicula, cinta o cubierta de peso ligero, alta temperatura y alto desempeño para aislamiento de alambre. | |
BR112014000395A2 (pt) | películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto | |
WO2016191194A8 (en) | Pentachlorodisilane | |
MY148287A (en) | Method of making a low-resistivity, doped zinc oxide coated glass article and the coated glass article made thereby | |
WO2009009267A8 (en) | Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition | |
WO2010088348A3 (en) | Methods for forming conformal oxide layers on semiconductor devices | |
GB201222506D0 (en) | Large area optical quality synthetic polycrystalline diamond window | |
EP3444376A3 (de) | Verfahren zur formung einer metalloxidschicht und vorrichtung zur plasmagestützten gasphasenabscheidung | |
WO2012023760A3 (ko) | 기체 차단막 형성 장치 및 그 방법 | |
TW200728605A (en) | Thermo-buckled micro-actuator unit made of polymer with high thermal expansion coefficient | |
WO2008139621A1 (ja) | 半導体素子の製造方法 |