KR100944831B1 - 반도체 장치의 제조 방법 및 성막 장치 - Google Patents

반도체 장치의 제조 방법 및 성막 장치 Download PDF

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Publication number
KR100944831B1
KR100944831B1 KR1020040086943A KR20040086943A KR100944831B1 KR 100944831 B1 KR100944831 B1 KR 100944831B1 KR 1020040086943 A KR1020040086943 A KR 1020040086943A KR 20040086943 A KR20040086943 A KR 20040086943A KR 100944831 B1 KR100944831 B1 KR 100944831B1
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South Korea
Prior art keywords
film
gas
hafnium
forming
insulating film
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Expired - Lifetime
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KR1020040086943A
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English (en)
Korean (ko)
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KR20050041930A (ko
Inventor
나까지마시게루
최동균
후지와라도모노리
이께가와히로아끼
나까무라겐지
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20050041930A publication Critical patent/KR20050041930A/ko
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

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  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
KR1020040086943A 2003-10-30 2004-10-29 반도체 장치의 제조 방법 및 성막 장치 Expired - Lifetime KR100944831B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00371182 2003-10-30
JP2003371182 2003-10-30

Publications (2)

Publication Number Publication Date
KR20050041930A KR20050041930A (ko) 2005-05-04
KR100944831B1 true KR100944831B1 (ko) 2010-03-03

Family

ID=34685745

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040086943A Expired - Lifetime KR100944831B1 (ko) 2003-10-30 2004-10-29 반도체 장치의 제조 방법 및 성막 장치

Country Status (3)

Country Link
US (1) US7084023B2 (https=)
KR (1) KR100944831B1 (https=)
TW (1) TW200526804A (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4358492B2 (ja) * 2002-09-25 2009-11-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
JP4455225B2 (ja) * 2004-08-25 2010-04-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US7479425B2 (en) * 2005-01-20 2009-01-20 Chartered Semiconductor Manufacturing, Ltd Method for forming high-K charge storage device
JP2006261434A (ja) * 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
KR100877100B1 (ko) * 2007-04-16 2009-01-09 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조 방법
KR101073858B1 (ko) * 2007-06-08 2011-10-14 도쿄엘렉트론가부시키가이샤 패터닝 방법
KR102326396B1 (ko) 2013-09-27 2021-11-12 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 아민 치환된 트리실릴아민 및 트리디실릴아민 화합물
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
JP6814057B2 (ja) * 2017-01-27 2021-01-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
CN111902918B (zh) 2018-04-27 2024-07-26 株式会社国际电气 半导体装置的制造方法、基板处理装置以及记录介质
TWI797640B (zh) 2020-06-18 2023-04-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 基於矽之自組裝單層組成物及使用該組成物之表面製備

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940008370B1 (ko) * 1986-08-04 1994-09-12 가부시기가이샤 히다찌세이사꾸쇼 반도체 장치
KR20020001337A (ko) * 2000-06-28 2002-01-09 박종섭 반도체 소자의 게이트산화막 형성 방법
JP2003008011A (ja) 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2003258243A (ja) 2002-02-28 2003-09-12 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0660406B2 (ja) 1987-03-24 1994-08-10 日本電気株式会社 ハフニウム酸化膜の気相成長法
US6277436B1 (en) * 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
JP2001257344A (ja) * 2000-03-10 2001-09-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP3851752B2 (ja) * 2000-03-27 2006-11-29 株式会社東芝 半導体装置の製造方法
JP4644359B2 (ja) 2000-11-30 2011-03-02 ルネサスエレクトロニクス株式会社 成膜方法
US6486080B2 (en) 2000-11-30 2002-11-26 Chartered Semiconductor Manufacturing Ltd. Method to form zirconium oxide and hafnium oxide for high dielectric constant materials
US6960537B2 (en) * 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
JP4102072B2 (ja) * 2002-01-08 2008-06-18 株式会社東芝 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940008370B1 (ko) * 1986-08-04 1994-09-12 가부시기가이샤 히다찌세이사꾸쇼 반도체 장치
KR20020001337A (ko) * 2000-06-28 2002-01-09 박종섭 반도체 소자의 게이트산화막 형성 방법
JP2003008011A (ja) 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2003258243A (ja) 2002-02-28 2003-09-12 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20050142716A1 (en) 2005-06-30
US7084023B2 (en) 2006-08-01
TWI354711B (https=) 2011-12-21
TW200526804A (en) 2005-08-16
KR20050041930A (ko) 2005-05-04

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