KR100933000B1 - 리소그래피 장치 및 디바이스 제조 방법 - Google Patents

리소그래피 장치 및 디바이스 제조 방법 Download PDF

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Publication number
KR100933000B1
KR100933000B1 KR1020070095195A KR20070095195A KR100933000B1 KR 100933000 B1 KR100933000 B1 KR 100933000B1 KR 1020070095195 A KR1020070095195 A KR 1020070095195A KR 20070095195 A KR20070095195 A KR 20070095195A KR 100933000 B1 KR100933000 B1 KR 100933000B1
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South Korea
Prior art keywords
substrate
projection system
liquid
die
movement
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Expired - Fee Related
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KR1020070095195A
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English (en)
Korean (ko)
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KR20080026505A (ko
Inventor
봅 스트리프케르크
돔메렌 유리 요하네스 라루렌티우스 마리아 반
리차드 모에르만
세드릭 데지레 그로우브스트라
Original Assignee
에이에스엠엘 네델란즈 비.브이.
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Publication of KR20080026505A publication Critical patent/KR20080026505A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020070095195A 2006-09-20 2007-09-19 리소그래피 장치 및 디바이스 제조 방법 Expired - Fee Related KR100933000B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/523,743 US8330936B2 (en) 2006-09-20 2006-09-20 Lithographic apparatus and device manufacturing method
US11/523,743 2006-09-20

Publications (2)

Publication Number Publication Date
KR20080026505A KR20080026505A (ko) 2008-03-25
KR100933000B1 true KR100933000B1 (ko) 2009-12-21

Family

ID=38782682

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070095195A Expired - Fee Related KR100933000B1 (ko) 2006-09-20 2007-09-19 리소그래피 장치 및 디바이스 제조 방법

Country Status (8)

Country Link
US (1) US8330936B2 (enExample)
EP (1) EP1903398B1 (enExample)
JP (2) JP4839288B2 (enExample)
KR (1) KR100933000B1 (enExample)
CN (1) CN101221363B (enExample)
DE (1) DE602007012032D1 (enExample)
SG (1) SG141385A1 (enExample)
TW (1) TWI375129B (enExample)

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JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
US8134685B2 (en) 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US20090310115A1 (en) * 2008-06-12 2009-12-17 Nikon Corporation Apparatus and method for exposing adjacent sites on a substrate
EP2151717A1 (en) * 2008-08-05 2010-02-10 ASML Holding N.V. Full wafer width scanning using step and scan system
NL2003226A (en) * 2008-08-19 2010-03-09 Asml Netherlands Bv Lithographic apparatus, drying device, metrology apparatus and device manufacturing method.
JP5354339B2 (ja) * 2008-12-18 2013-11-27 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
US8953143B2 (en) * 2009-04-24 2015-02-10 Nikon Corporation Liquid immersion member
US8610878B2 (en) * 2010-03-04 2013-12-17 Asml Netherlands B.V. Lithographic apparatus and method
NL2006818A (en) 2010-07-02 2012-01-03 Asml Netherlands Bv A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus.
NL2008157A (en) * 2011-02-22 2012-08-24 Asml Netherlands Bv Lithographic apparatus and lithographic projection method.
US8906599B2 (en) 2012-05-17 2014-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Enhanced scanner throughput system and method
US9568828B2 (en) * 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
JP5986538B2 (ja) * 2013-06-10 2016-09-06 キヤノン株式会社 露光装置および物品の製造方法
JP5960198B2 (ja) 2013-07-02 2016-08-02 キヤノン株式会社 パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法
JP2016154241A (ja) * 2013-07-02 2016-08-25 キヤノン株式会社 パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法
US9760027B2 (en) * 2013-10-17 2017-09-12 United Microelectronics Corp. Scanner routing method for particle removal
CN104793467B (zh) * 2014-01-20 2017-05-17 中芯国际集成电路制造(上海)有限公司 曝光装置、掩膜板及曝光方法
EP3713664B1 (en) 2017-11-21 2022-01-05 Nouryon Chemicals International B.V. Thermally expandable microspheres prepared from bio-based monomers
JP7504168B2 (ja) * 2022-08-10 2024-06-21 キヤノン株式会社 露光装置、露光方法及び物品の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021702A (ja) * 1998-06-30 2000-01-21 Canon Inc 露光装置ならびにデバイス製造方法
JP2005072132A (ja) * 2003-08-21 2005-03-17 Nikon Corp 露光装置及びデバイス製造方法

Family Cites Families (24)

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US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US6118515A (en) * 1993-12-08 2000-09-12 Nikon Corporation Scanning exposure method
JPH10303126A (ja) * 1997-02-28 1998-11-13 Nikon Corp 移動シーケンスの決定方法
WO1999046807A1 (en) * 1998-03-09 1999-09-16 Nikon Corporation Scanning exposure method, scanning exposure apparatus and its manufacturing method, and device and its manufacturing method
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US6734117B2 (en) * 2002-03-12 2004-05-11 Nikon Corporation Periodic clamping method and apparatus to reduce thermal stress in a wafer
EP1420300B1 (en) 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420299B1 (en) 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR20110086130A (ko) * 2002-12-10 2011-07-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
DE60319087T2 (de) 2003-10-16 2009-02-05 Asml Netherlands B.V. Lithographische Methode zur Herstellung einer Vorrichtung
KR100585108B1 (ko) * 2003-11-14 2006-06-01 삼성전자주식회사 스캔 방식의 노광 장치를 이용한 웨이퍼 노광 방법
US7244534B2 (en) 2004-04-23 2007-07-17 Asml Netherlands B.V. Device manufacturing method
JPWO2005106930A1 (ja) 2004-04-27 2008-03-21 株式会社ニコン 露光方法、露光装置及びデバイス製造方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4003885B2 (ja) * 2004-08-23 2007-11-07 Ｔｄｋ株式会社 露光方法および露光装置
JP4625673B2 (ja) 2004-10-15 2011-02-02 株式会社東芝 露光方法及び露光装置
DE602006012746D1 (de) 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
US7462429B2 (en) 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7666576B2 (en) * 2006-06-07 2010-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Exposure scan and step direction optimization
US7656502B2 (en) 2006-06-22 2010-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021702A (ja) * 1998-06-30 2000-01-21 Canon Inc 露光装置ならびにデバイス製造方法
JP2005072132A (ja) * 2003-08-21 2005-03-17 Nikon Corp 露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
DE602007012032D1 (de) 2011-03-03
SG141385A1 (en) 2008-04-28
TW200821769A (en) 2008-05-16
JP2011018915A (ja) 2011-01-27
US8330936B2 (en) 2012-12-11
EP1903398A1 (en) 2008-03-26
JP4839288B2 (ja) 2011-12-21
KR20080026505A (ko) 2008-03-25
CN101221363A (zh) 2008-07-16
TWI375129B (en) 2012-10-21
JP5214678B2 (ja) 2013-06-19
EP1903398B1 (en) 2011-01-19
CN101221363B (zh) 2011-09-28
JP2008078648A (ja) 2008-04-03
US20080068570A1 (en) 2008-03-20

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