JP4839288B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents
リソグラフィ装置およびデバイス製造方法 Download PDFInfo
- Publication number
- JP4839288B2 JP4839288B2 JP2007237470A JP2007237470A JP4839288B2 JP 4839288 B2 JP4839288 B2 JP 4839288B2 JP 2007237470 A JP2007237470 A JP 2007237470A JP 2007237470 A JP2007237470 A JP 2007237470A JP 4839288 B2 JP4839288 B2 JP 4839288B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- projection system
- dies
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 279
- 239000007788 liquid Substances 0.000 claims description 164
- 230000005855 radiation Effects 0.000 claims description 65
- 238000000059 patterning Methods 0.000 claims description 40
- 230000033001 locomotion Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 description 36
- 230000004888 barrier function Effects 0.000 description 33
- 238000007654 immersion Methods 0.000 description 20
- 230000005499 meniscus Effects 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 239000002245 particle Substances 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 13
- 239000011148 porous material Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000671 immersion lithography Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000007514 turning Methods 0.000 description 3
- 238000004590 computer program Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 210000003128 head Anatomy 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/523,743 US8330936B2 (en) | 2006-09-20 | 2006-09-20 | Lithographic apparatus and device manufacturing method |
| US11/523,743 | 2006-09-20 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010187099A Division JP5214678B2 (ja) | 2006-09-20 | 2010-08-24 | リソグラフィ装置およびデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008078648A JP2008078648A (ja) | 2008-04-03 |
| JP4839288B2 true JP4839288B2 (ja) | 2011-12-21 |
Family
ID=38782682
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007237470A Expired - Fee Related JP4839288B2 (ja) | 2006-09-20 | 2007-09-13 | リソグラフィ装置およびデバイス製造方法 |
| JP2010187099A Expired - Fee Related JP5214678B2 (ja) | 2006-09-20 | 2010-08-24 | リソグラフィ装置およびデバイス製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010187099A Expired - Fee Related JP5214678B2 (ja) | 2006-09-20 | 2010-08-24 | リソグラフィ装置およびデバイス製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8330936B2 (enExample) |
| EP (1) | EP1903398B1 (enExample) |
| JP (2) | JP4839288B2 (enExample) |
| KR (1) | KR100933000B1 (enExample) |
| CN (1) | CN101221363B (enExample) |
| DE (1) | DE602007012032D1 (enExample) |
| SG (1) | SG141385A1 (enExample) |
| TW (1) | TWI375129B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5089143B2 (ja) * | 2006-11-20 | 2012-12-05 | キヤノン株式会社 | 液浸露光装置 |
| US8134685B2 (en) | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| US20090310115A1 (en) * | 2008-06-12 | 2009-12-17 | Nikon Corporation | Apparatus and method for exposing adjacent sites on a substrate |
| EP2151717A1 (en) * | 2008-08-05 | 2010-02-10 | ASML Holding N.V. | Full wafer width scanning using step and scan system |
| NL2003226A (en) * | 2008-08-19 | 2010-03-09 | Asml Netherlands Bv | Lithographic apparatus, drying device, metrology apparatus and device manufacturing method. |
| JP5354339B2 (ja) * | 2008-12-18 | 2013-11-27 | 株式会社ニコン | 露光方法及び露光装置、並びにデバイス製造方法 |
| US8953143B2 (en) * | 2009-04-24 | 2015-02-10 | Nikon Corporation | Liquid immersion member |
| US8610878B2 (en) * | 2010-03-04 | 2013-12-17 | Asml Netherlands B.V. | Lithographic apparatus and method |
| NL2006818A (en) | 2010-07-02 | 2012-01-03 | Asml Netherlands Bv | A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus. |
| NL2008157A (en) * | 2011-02-22 | 2012-08-24 | Asml Netherlands Bv | Lithographic apparatus and lithographic projection method. |
| US8906599B2 (en) | 2012-05-17 | 2014-12-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Enhanced scanner throughput system and method |
| US9568828B2 (en) * | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| JP5986538B2 (ja) * | 2013-06-10 | 2016-09-06 | キヤノン株式会社 | 露光装置および物品の製造方法 |
| JP5960198B2 (ja) | 2013-07-02 | 2016-08-02 | キヤノン株式会社 | パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法 |
| JP2016154241A (ja) * | 2013-07-02 | 2016-08-25 | キヤノン株式会社 | パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法 |
| US9760027B2 (en) * | 2013-10-17 | 2017-09-12 | United Microelectronics Corp. | Scanner routing method for particle removal |
| CN104793467B (zh) * | 2014-01-20 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | 曝光装置、掩膜板及曝光方法 |
| EP3713664B1 (en) | 2017-11-21 | 2022-01-05 | Nouryon Chemicals International B.V. | Thermally expandable microspheres prepared from bio-based monomers |
| JP7504168B2 (ja) * | 2022-08-10 | 2024-06-21 | キヤノン株式会社 | 露光装置、露光方法及び物品の製造方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| US6118515A (en) * | 1993-12-08 | 2000-09-12 | Nikon Corporation | Scanning exposure method |
| JPH10303126A (ja) * | 1997-02-28 | 1998-11-13 | Nikon Corp | 移動シーケンスの決定方法 |
| WO1999046807A1 (en) * | 1998-03-09 | 1999-09-16 | Nikon Corporation | Scanning exposure method, scanning exposure apparatus and its manufacturing method, and device and its manufacturing method |
| WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| JP2000021702A (ja) | 1998-06-30 | 2000-01-21 | Canon Inc | 露光装置ならびにデバイス製造方法 |
| US6734117B2 (en) * | 2002-03-12 | 2004-05-11 | Nikon Corporation | Periodic clamping method and apparatus to reduce thermal stress in a wafer |
| EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI232357B (en) * | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR20110086130A (ko) * | 2002-12-10 | 2011-07-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP2005072132A (ja) | 2003-08-21 | 2005-03-17 | Nikon Corp | 露光装置及びデバイス製造方法 |
| DE60319087T2 (de) | 2003-10-16 | 2009-02-05 | Asml Netherlands B.V. | Lithographische Methode zur Herstellung einer Vorrichtung |
| KR100585108B1 (ko) * | 2003-11-14 | 2006-06-01 | 삼성전자주식회사 | 스캔 방식의 노광 장치를 이용한 웨이퍼 노광 방법 |
| US7244534B2 (en) | 2004-04-23 | 2007-07-17 | Asml Netherlands B.V. | Device manufacturing method |
| JPWO2005106930A1 (ja) | 2004-04-27 | 2008-03-21 | 株式会社ニコン | 露光方法、露光装置及びデバイス製造方法 |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4003885B2 (ja) * | 2004-08-23 | 2007-11-07 | Tdk株式会社 | 露光方法および露光装置 |
| JP4625673B2 (ja) | 2004-10-15 | 2011-02-02 | 株式会社東芝 | 露光方法及び露光装置 |
| DE602006012746D1 (de) | 2005-01-14 | 2010-04-22 | Asml Netherlands Bv | Lithografische Vorrichtung und Herstellungsverfahren |
| US7462429B2 (en) | 2005-10-12 | 2008-12-09 | Asml Netherlands B.V. | Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate |
| US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7666576B2 (en) * | 2006-06-07 | 2010-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Exposure scan and step direction optimization |
| US7656502B2 (en) | 2006-06-22 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2006
- 2006-09-20 US US11/523,743 patent/US8330936B2/en not_active Expired - Fee Related
-
2007
- 2007-09-13 TW TW096134261A patent/TWI375129B/zh not_active IP Right Cessation
- 2007-09-13 SG SG200708777-8A patent/SG141385A1/en unknown
- 2007-09-13 JP JP2007237470A patent/JP4839288B2/ja not_active Expired - Fee Related
- 2007-09-18 DE DE602007012032T patent/DE602007012032D1/de active Active
- 2007-09-18 EP EP07253692A patent/EP1903398B1/en not_active Not-in-force
- 2007-09-19 KR KR1020070095195A patent/KR100933000B1/ko not_active Expired - Fee Related
- 2007-09-20 CN CN2007101527498A patent/CN101221363B/zh not_active Expired - Fee Related
-
2010
- 2010-08-24 JP JP2010187099A patent/JP5214678B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE602007012032D1 (de) | 2011-03-03 |
| SG141385A1 (en) | 2008-04-28 |
| TW200821769A (en) | 2008-05-16 |
| JP2011018915A (ja) | 2011-01-27 |
| US8330936B2 (en) | 2012-12-11 |
| EP1903398A1 (en) | 2008-03-26 |
| KR20080026505A (ko) | 2008-03-25 |
| KR100933000B1 (ko) | 2009-12-21 |
| CN101221363A (zh) | 2008-07-16 |
| TWI375129B (en) | 2012-10-21 |
| JP5214678B2 (ja) | 2013-06-19 |
| EP1903398B1 (en) | 2011-01-19 |
| CN101221363B (zh) | 2011-09-28 |
| JP2008078648A (ja) | 2008-04-03 |
| US20080068570A1 (en) | 2008-03-20 |
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