KR100929268B1 - 노광장치 및 디바이스 제조방법 - Google Patents

노광장치 및 디바이스 제조방법 Download PDF

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Publication number
KR100929268B1
KR100929268B1 KR1020070132921A KR20070132921A KR100929268B1 KR 100929268 B1 KR100929268 B1 KR 100929268B1 KR 1020070132921 A KR1020070132921 A KR 1020070132921A KR 20070132921 A KR20070132921 A KR 20070132921A KR 100929268 B1 KR100929268 B1 KR 100929268B1
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KR
South Korea
Prior art keywords
light blocking
blocking plate
exposure
substrate
light
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070132921A
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English (en)
Korean (ko)
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KR20080057166A (ko
Inventor
신지 니시무라
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20080057166A publication Critical patent/KR20080057166A/ko
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Publication of KR100929268B1 publication Critical patent/KR100929268B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020070132921A 2006-12-19 2007-12-18 노광장치 및 디바이스 제조방법 Expired - Fee Related KR100929268B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006341108A JP4838698B2 (ja) 2006-12-19 2006-12-19 露光装置およびデバイス製造方法
JPJP-P-2006-00341108 2006-12-19

Publications (2)

Publication Number Publication Date
KR20080057166A KR20080057166A (ko) 2008-06-24
KR100929268B1 true KR100929268B1 (ko) 2009-11-27

Family

ID=39526728

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070132921A Expired - Fee Related KR100929268B1 (ko) 2006-12-19 2007-12-18 노광장치 및 디바이스 제조방법

Country Status (4)

Country Link
US (1) US7477357B2 (enExample)
JP (1) JP4838698B2 (enExample)
KR (1) KR100929268B1 (enExample)
TW (1) TWI388939B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101359080B1 (ko) 2010-04-28 2014-02-05 캐논 가부시끼가이샤 리소그래피 장치 및 물품의 제조 방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5272584B2 (ja) * 2008-08-29 2013-08-28 株式会社ニコン 遮光ユニット、可変スリット装置、及び露光装置
JP5204725B2 (ja) * 2009-06-09 2013-06-05 Ｋｂセーレン株式会社 ポリウレタン極細繊維の製造方法
JP6243616B2 (ja) * 2013-03-26 2017-12-06 キヤノン株式会社 露光装置および物品の製造方法
CN116193090B (zh) * 2023-03-01 2025-08-01 深圳市和天创科技股份有限公司 一种投影仪自动六角校正装置及校正方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010043482A (ko) * 1998-06-02 2001-05-25 오노 시게오 주사형 노광장치 및 그의 제조방법, 및 디바이스 제조방법
JP2002033272A (ja) 2000-05-11 2002-01-31 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2004063988A (ja) * 2002-07-31 2004-02-26 Canon Inc 照明光学系、当該照明光学系を有する露光装置及びデバイス製造方法
KR20060059491A (ko) * 2004-11-29 2006-06-02 삼성전자주식회사 레티클 마스킹 블레이드 및 이를 포함하는 반도체 소자제조용 노광 장치

Family Cites Families (11)

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US6078381A (en) * 1993-02-01 2000-06-20 Nikon Corporation Exposure method and apparatus
US5854671A (en) * 1993-05-28 1998-12-29 Nikon Corporation Scanning exposure method and apparatus therefor and a projection exposure apparatus and method which selectively chooses between static exposure and scanning exposure
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
US5966202A (en) * 1997-03-31 1999-10-12 Svg Lithography Systems, Inc. Adjustable slit
JP2000114164A (ja) * 1998-10-09 2000-04-21 Canon Inc 走査型投影露光装置及びそれを用いたデバイスの製造方法
JP3056206B1 (ja) * 1999-03-18 2000-06-26 広島日本電気株式会社 ダミーパターン形成方法及び半導体製造方法
US6704090B2 (en) * 2000-05-11 2004-03-09 Nikon Corporation Exposure method and exposure apparatus
JP2002110529A (ja) * 2000-10-03 2002-04-12 Nikon Corp 投影露光装置及び該装置を用いたマイクロデバイス製造方法
JP2002184676A (ja) * 2000-12-18 2002-06-28 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
JP4631707B2 (ja) * 2003-11-13 2011-02-16 株式会社ニコン 照明装置、露光装置、露光方法及びデバイスの製造方法
JP4581639B2 (ja) 2003-11-13 2010-11-17 株式会社ニコン 可変スリット装置、照明装置、露光装置、及びデバイスの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010043482A (ko) * 1998-06-02 2001-05-25 오노 시게오 주사형 노광장치 및 그의 제조방법, 및 디바이스 제조방법
JP2002033272A (ja) 2000-05-11 2002-01-31 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2004063988A (ja) * 2002-07-31 2004-02-26 Canon Inc 照明光学系、当該照明光学系を有する露光装置及びデバイス製造方法
KR20060059491A (ko) * 2004-11-29 2006-06-02 삼성전자주식회사 레티클 마스킹 블레이드 및 이를 포함하는 반도체 소자제조용 노광 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101359080B1 (ko) 2010-04-28 2014-02-05 캐논 가부시끼가이샤 리소그래피 장치 및 물품의 제조 방법

Also Published As

Publication number Publication date
JP4838698B2 (ja) 2011-12-14
US20080143991A1 (en) 2008-06-19
KR20080057166A (ko) 2008-06-24
TW200842504A (en) 2008-11-01
JP2008153498A (ja) 2008-07-03
US7477357B2 (en) 2009-01-13
TWI388939B (zh) 2013-03-11

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