KR100914110B1 - 반도체 발광 소자 - Google Patents

반도체 발광 소자 Download PDF

Info

Publication number
KR100914110B1
KR100914110B1 KR1020070084788A KR20070084788A KR100914110B1 KR 100914110 B1 KR100914110 B1 KR 100914110B1 KR 1020070084788 A KR1020070084788 A KR 1020070084788A KR 20070084788 A KR20070084788 A KR 20070084788A KR 100914110 B1 KR100914110 B1 KR 100914110B1
Authority
KR
South Korea
Prior art keywords
electrode
light emitting
semiconductor layer
peripheral edge
virtual straight
Prior art date
Application number
KR1020070084788A
Other languages
English (en)
Korean (ko)
Other versions
KR20080023116A (ko
Inventor
코지 오츠카
요시히코 우치다
Original Assignee
산켄덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 산켄덴키 가부시키가이샤 filed Critical 산켄덴키 가부시키가이샤
Publication of KR20080023116A publication Critical patent/KR20080023116A/ko
Application granted granted Critical
Publication of KR100914110B1 publication Critical patent/KR100914110B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
KR1020070084788A 2006-09-08 2007-08-23 반도체 발광 소자 KR100914110B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00243691 2006-09-08
JP2006243691A JP2008066554A (ja) 2006-09-08 2006-09-08 半導体発光素子

Publications (2)

Publication Number Publication Date
KR20080023116A KR20080023116A (ko) 2008-03-12
KR100914110B1 true KR100914110B1 (ko) 2009-08-27

Family

ID=39288981

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070084788A KR100914110B1 (ko) 2006-09-08 2007-08-23 반도체 발광 소자

Country Status (3)

Country Link
JP (1) JP2008066554A (ja)
KR (1) KR100914110B1 (ja)
TW (1) TW200824151A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2234182B1 (en) 2007-12-28 2016-11-09 Nichia Corporation Semiconductor light emitting element and method for manufacturing the same
JP5150367B2 (ja) * 2008-05-27 2013-02-20 東芝ディスクリートテクノロジー株式会社 発光装置及びその製造方法
TWI424587B (zh) * 2008-06-30 2014-01-21 Luxtaltek Corp Light emitting diodes with nanoscale surface structure and embossing molds forming nanometer scale surface structures
JP5687858B2 (ja) * 2010-07-30 2015-03-25 スタンレー電気株式会社 半導体発光装置
JP5736930B2 (ja) * 2011-04-19 2015-06-17 日亜化学工業株式会社 半導体発光素子
JP2013183032A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体発光素子
CN103887418B (zh) * 2012-12-22 2017-06-30 赛恩倍吉科技顾问（深圳）有限公司 发光芯片组合
JP6287317B2 (ja) * 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子
JP2014229648A (ja) * 2013-05-20 2014-12-08 シャープ株式会社 半導体発光素子
WO2015156123A1 (ja) * 2014-04-07 2015-10-15 旭化成イーマテリアルズ株式会社 光学基材及びその製造方法、並びに、積層体、レジスト剥離液

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649939B1 (en) 1999-09-10 2003-11-18 Osram Opto Semiconductors Gmbh & Co. Ohg Light-emitting diode with a structured surface
KR20040090465A (ko) * 2003-04-15 2004-10-25 마츠시타 덴끼 산교 가부시키가이샤 반도체 발광소자 및 그 제조방법
JP2006049855A (ja) * 2004-06-28 2006-02-16 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP2006100569A (ja) * 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818100A (ja) * 1994-06-24 1996-01-19 Showa Denko Kk 化合物半導体発光ダイオード

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649939B1 (en) 1999-09-10 2003-11-18 Osram Opto Semiconductors Gmbh & Co. Ohg Light-emitting diode with a structured surface
KR20040090465A (ko) * 2003-04-15 2004-10-25 마츠시타 덴끼 산교 가부시키가이샤 반도체 발광소자 및 그 제조방법
JP2006049855A (ja) * 2004-06-28 2006-02-16 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP2006100569A (ja) * 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
JP2008066554A (ja) 2008-03-21
TW200824151A (en) 2008-06-01
TWI357162B (ja) 2012-01-21
KR20080023116A (ko) 2008-03-12

Similar Documents

Publication Publication Date Title
KR100914110B1 (ko) 반도체 발광 소자
JP6722221B2 (ja) 発光ダイオード
US9705043B2 (en) Light-emitting diode, light-emitting diode lamp, and illumination device
EP2339654B1 (en) Light emitting diode
US7560737B2 (en) Semiconductor light emitting element and fabrication method thereof
KR101017394B1 (ko) 발광 소자 및 그것을 제조하는 방법
JP2008066554A5 (ja)
US20100301362A1 (en) Semiconductor light emitting element
KR20140078977A (ko) 고효율 발광 다이오드
KR101209163B1 (ko) 반도체 발광소자
US20220285593A1 (en) Micro LED Display Element
KR20200065872A (ko) 발광 소자
KR20160059221A (ko) 발광소자 및 조명시스템
US9508900B2 (en) Light-emitting device
KR20100043678A (ko) 발광 소자 및 그 제조방법
KR101239849B1 (ko) 고효율 발광 다이오드
KR101773582B1 (ko) 고효율 발광 다이오드
KR101895227B1 (ko) 반도체 발광소자
US10177279B2 (en) Light-emitting diode with multiple N contact structure
KR101643688B1 (ko) 반도체 발광소자
KR100756842B1 (ko) 광추출용 컬럼들을 갖는 발광 다이오드 및 그것을 제조하는방법
CN115799413A (zh) 微型发光二极管及发光装置
TW202416557A (zh) 發光元件及其製造方法
KR20200010805A (ko) 발광소자
KR101550951B1 (ko) 발광소자

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee