KR100891392B1 - 성막 장치 및 성막 방법 - Google Patents

성막 장치 및 성막 방법 Download PDF

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KR100891392B1
KR100891392B1 KR1020040083357A KR20040083357A KR100891392B1 KR 100891392 B1 KR100891392 B1 KR 100891392B1 KR 1020040083357 A KR1020040083357 A KR 1020040083357A KR 20040083357 A KR20040083357 A KR 20040083357A KR 100891392 B1 KR100891392 B1 KR 100891392B1
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temperature
film
gas
reaction vessel
silicon germanium
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KR20050037953A (ko
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구로까와마사끼
기무라노리후미
후지따다께히꼬
후루사와요시까즈
고모리가쯔히꼬
하세베가즈히데
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도쿄엘렉트론가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01314—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of Ge, C or of compounds of Si, Ge or C contacting the insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020040083357A 2003-10-20 2004-10-19 성막 장치 및 성막 방법 Expired - Fee Related KR100891392B1 (ko)

Applications Claiming Priority (2)

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JPJP-P-2003-00359633 2003-10-20
JP2003359633 2003-10-20

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KR1020080090861A Division KR100935039B1 (ko) 2003-10-20 2008-09-17 성막 장치 및 성막 방법

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KR20050037953A KR20050037953A (ko) 2005-04-25
KR100891392B1 true KR100891392B1 (ko) 2009-04-02

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KR1020080090861A Expired - Lifetime KR100935039B1 (ko) 2003-10-20 2008-09-17 성막 장치 및 성막 방법

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US (1) US7273818B2 (https=)
JP (1) JP5240159B2 (https=)
KR (2) KR100891392B1 (https=)
TW (1) TW200529300A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698244B2 (en) 2015-04-10 2017-07-04 Samsung Electronics Co., Ltd. Semiconductor devices and methods of fabricating the same

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4720058B2 (ja) * 2000-11-28 2011-07-13 株式会社Sumco シリコンウェーハの製造方法
JP4258518B2 (ja) * 2005-03-09 2009-04-30 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP5067381B2 (ja) 2009-02-19 2012-11-07 東京エレクトロン株式会社 熱処理装置の運転方法
JP5337269B2 (ja) * 2010-04-27 2013-11-06 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
JP5544343B2 (ja) * 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
JP5514162B2 (ja) * 2011-07-22 2014-06-04 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
JP5854112B2 (ja) * 2011-09-30 2016-02-09 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP6258813B2 (ja) 2014-08-12 2018-01-10 東京エレクトロン株式会社 ゲルマニウム膜の成膜方法および成膜装置
US9647090B2 (en) * 2014-12-30 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Surface passivation for germanium-based semiconductor structure
KR102405665B1 (ko) * 2015-10-27 2022-06-08 에스케이하이닉스 주식회사 에피택시성장 방법 및 그를 이용한 반도체구조물 형성 방법
JP6461030B2 (ja) * 2016-03-15 2019-01-30 株式会社東芝 電子装置及び電子装置の製造方法
JP6498635B2 (ja) * 2016-06-23 2019-04-10 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP2018160585A (ja) 2017-03-23 2018-10-11 東京エレクトロン株式会社 加熱方法、成膜方法、半導体装置の製造方法、および成膜装置
JP6777624B2 (ja) 2017-12-28 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US11791159B2 (en) 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
JP2020117762A (ja) * 2019-01-23 2020-08-06 東京エレクトロン株式会社 半導体製造システムの制御方法及び半導体製造システム

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JP2003077845A (ja) 2001-09-05 2003-03-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
KR20030072177A (ko) * 2002-03-04 2003-09-13 삼성전자주식회사 이종결정립 적층게이트를 갖는 반도체 소자 및 그 형성방법

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JPH0652714B2 (ja) * 1981-03-30 1994-07-06 株式会社日立製作所 薄膜材料の製造法
JPS57181117A (en) * 1981-05-01 1982-11-08 Agency Of Ind Science & Technol Manufacture of amorhous semiconductor film
JPH0645257A (ja) * 1992-07-21 1994-02-18 Oki Electric Ind Co Ltd 半導体薄膜形成方法
DE4345229C2 (de) * 1993-09-30 1998-04-09 Reinhard Dr Schwarz Verfahren zum Herstellen von lumineszenten Elementstrukturen und Elementstrukturen
JP2002093735A (ja) * 2000-09-13 2002-03-29 Sony Corp 半導体装置の製造方法
KR100402381B1 (ko) 2001-02-09 2003-10-17 삼성전자주식회사 게르마늄 함유 폴리실리콘 게이트를 가지는 씨모스형반도체 장치 및 그 형성방법
JP2004079912A (ja) * 2002-08-21 2004-03-11 Sharp Corp 半導体基板改質方法およびこの方法を用いた半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003077845A (ja) 2001-09-05 2003-03-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
KR20030072177A (ko) * 2002-03-04 2003-09-13 삼성전자주식회사 이종결정립 적층게이트를 갖는 반도체 소자 및 그 형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698244B2 (en) 2015-04-10 2017-07-04 Samsung Electronics Co., Ltd. Semiconductor devices and methods of fabricating the same

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US20050170617A1 (en) 2005-08-04
JP2010034580A (ja) 2010-02-12
TWI336906B (https=) 2011-02-01
TW200529300A (en) 2005-09-01
KR20050037953A (ko) 2005-04-25
US7273818B2 (en) 2007-09-25
JP5240159B2 (ja) 2013-07-17
KR100935039B1 (ko) 2009-12-30
KR20080089327A (ko) 2008-10-06

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