JP5067381B2 - 熱処理装置の運転方法 - Google Patents
熱処理装置の運転方法 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 29
- 239000007789 gas Substances 0.000 claims description 159
- 238000006243 chemical reaction Methods 0.000 claims description 88
- 239000010408 film Substances 0.000 claims description 88
- 238000004140 cleaning Methods 0.000 claims description 47
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 37
- 229910052732 germanium Inorganic materials 0.000 claims description 27
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 17
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000356 contaminant Substances 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000011017 operating method Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 48
- 238000010926 purge Methods 0.000 description 25
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 17
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 15
- 229910052986 germanium hydride Inorganic materials 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- 229910000078 germane Inorganic materials 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- -1 fluorine gas Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/28—Deposition of only one other non-metal element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
前記反応容器内に被処理体を搬入して処理ガスを供給すると共に当該反応容器内を前記加熱手段により加熱して、被処理体にゲルマニウムを含む薄膜を成膜する工程と、
次いで反応容器内に被処理体が搬入されていない状態でハロゲンを含むクリーニングガスを当該反応容器内に供給して、前記工程にて前記反応容器内に成膜された薄膜を除去する工程と、
その後、酸素ガス、オゾンガス及び窒素と酸素との化合物ガスから選択される酸化ガスと、水素ガスとを前記反応容器内に供給すると共に当該反応容器内を加熱してこれらガスを活性化し、この活性化されたガスにより反応容器内に存在するゲルマニウムを除去する工程と、
しかる後、前記反応容器内に被処理体を搬入して処理ガスを供給すると共に当該反応容器内を前記加熱手段により加熱して、被処理体にゲルマニウムが汚染物質となる薄膜を成膜する工程と、を含むことを特徴とする。
(a)前記ゲルマニウムを含む膜はシリコンゲルマニウム膜であること。
(b)前記ゲルマニウムが汚染物質となる薄膜は、シリコン膜であること。
まず、基板であるウエハWを所定枚数ウエハボート25に棚状に載置して、図示しないボートエレベータを上昇させることにより、ウエハWを反応容器2内に搬入する。
こうして、所定時間成膜を行ったら、処理ガスの供給並びに真空排気を停止し、反応容器2内を例えばN2ガスなどの不活性ガスで置換した後、反応容器2内からウエハボート25を搬出する。
以上に説明した観点から、縦型熱処理装置1での膜種切り替え時に、反応容器2内に残存しているGeを効果的に除去するためには、図2、図3に示した順番にF2ガスによるクリーニング、Geのパージ、ポリシリコン膜のプリコートを実行することが好ましいといえる。
A.実験条件
(比較例1)
SiGe成膜後の基板をフッ硝酸液中に数分間浸漬するウェット洗浄を行った。
(比較例2)
石英板表面に1μmの膜厚のポリシリコン膜を成膜するコーティングを行った。
(比較例3)
反応容器2内にF2ガスを供給し、ウエハボート25上に載置した石英基板に対するクリーニングを約1時間実施した。
(実施例1)
(比較例3)のF2ガスクリーニングを行った後の石英基板を再度反応容器2内に載置し、H2ガスとN2Oガスとを供給してGeのパージを5時間実施した。
各実施例、比較例におけるGeの計測結果を図4に示す。図4の横軸に示したTの符号はウエハボート25の上段側に保持された基板の計測結果を示し、Bの符号はウエハボート25の下段側での結果を示している。
1 縦型熱処理装置
2 反応容器
25 ウエハボート
3 加熱炉
31 ヒーター
4 排気口
51 第1のインジェクター
52 第2のインジェクター
53 第3のインジェクター
54 クリーニングガスインジェクター
611〜613
処理ガス供給管
62 モノシラン供給部
63 モノゲルマン供給部
71 クリーニングガス供給管
710 ガス混合部
72 水素供給部
73 酸化ガス供給部
74 クリーニングガス供給部
8 制御部
Claims (3)
- 被処理体を保持具に保持させて、その周囲に加熱手段が設けられた反応容器内に搬入して熱処理を行う熱処理装置を運転する方法において、
前記反応容器内に被処理体を搬入して処理ガスを供給すると共に当該反応容器内を前記加熱手段により加熱して、被処理体にゲルマニウムを含む薄膜を成膜する工程と、
次いで反応容器内に被処理体が搬入されていない状態でハロゲンを含むクリーニングガスを当該反応容器内に供給して、前記工程にて前記反応容器内に成膜された薄膜を除去する工程と、
その後、酸素ガス、オゾンガス及び窒素と酸素との化合物ガスから選択される酸化ガスと、水素ガスとを前記反応容器内に供給すると共に当該反応容器内を加熱してこれらガスを活性化し、この活性化されたガスにより反応容器内に存在するゲルマニウムを除去する工程と、
しかる後、前記反応容器内に被処理体を搬入して処理ガスを供給すると共に当該反応容器内を前記加熱手段により加熱して、被処理体にゲルマニウムが汚染物質となる薄膜を成膜する工程と、を含むことを特徴とする熱処理装置の運転方法。 - 前記ゲルマニウムを含む膜はシリコンゲルマニウム膜であることを特徴とする請求項1に記載の熱処理装置の運転方法。
- 前記ゲルマニウムが汚染物質となる薄膜は、シリコン膜であることを特徴とする請求項1または2に記載の熱処理装置の運転方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2009036831A JP5067381B2 (ja) | 2009-02-19 | 2009-02-19 | 熱処理装置の運転方法 |
TW099103941A TWI439566B (zh) | 2009-02-19 | 2010-02-09 | 形成含鍺膜的裝置之使用方法 |
CN201010115677.1A CN101814431B (zh) | 2009-02-19 | 2010-02-11 | 形成含锗膜的装置的使用方法 |
US12/707,193 US8518488B2 (en) | 2009-02-19 | 2010-02-17 | Method for using apparatus configured to form germanium-containing film |
KR1020100014517A KR101300054B1 (ko) | 2009-02-19 | 2010-02-18 | 게르마늄 함유막을 성막하는 장치의 사용 방법 |
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JP2009036831A JP5067381B2 (ja) | 2009-02-19 | 2009-02-19 | 熱処理装置の運転方法 |
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JP5751895B2 (ja) * | 2010-06-08 | 2015-07-22 | 株式会社日立国際電気 | 半導体装置の製造方法、クリーニング方法および基板処理装置 |
JP6125846B2 (ja) * | 2012-03-22 | 2017-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
JP6035166B2 (ja) * | 2013-02-26 | 2016-11-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
JP5847783B2 (ja) * | 2013-10-21 | 2016-01-27 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
JP6322131B2 (ja) * | 2014-12-24 | 2018-05-09 | 東京エレクトロン株式会社 | シリコン膜の成膜方法および成膜装置 |
JP6779165B2 (ja) * | 2017-03-29 | 2020-11-04 | 東京エレクトロン株式会社 | 金属汚染防止方法及び成膜装置 |
JP2018170387A (ja) * | 2017-03-29 | 2018-11-01 | 東京エレクトロン株式会社 | 成膜方法及び縦型熱処理装置 |
JP7190875B2 (ja) * | 2018-11-16 | 2022-12-16 | 東京エレクトロン株式会社 | ポリシリコン膜の形成方法及び成膜装置 |
TW202146699A (zh) * | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
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JP2008283148A (ja) * | 2007-05-14 | 2008-11-20 | Tokyo Electron Ltd | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
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US20100210094A1 (en) | 2010-08-19 |
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CN101814431A (zh) | 2010-08-25 |
KR101300054B1 (ko) | 2013-08-29 |
US8518488B2 (en) | 2013-08-27 |
TWI439566B (zh) | 2014-06-01 |
JP2010192757A (ja) | 2010-09-02 |
CN101814431B (zh) | 2014-08-20 |
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