KR100874442B1 - 반도체 소자 및 그 형성방법, 반도체 클러스터 장비 - Google Patents
반도체 소자 및 그 형성방법, 반도체 클러스터 장비 Download PDFInfo
- Publication number
- KR100874442B1 KR100874442B1 KR20070039874A KR20070039874A KR100874442B1 KR 100874442 B1 KR100874442 B1 KR 100874442B1 KR 20070039874 A KR20070039874 A KR 20070039874A KR 20070039874 A KR20070039874 A KR 20070039874A KR 100874442 B1 KR100874442 B1 KR 100874442B1
- Authority
- KR
- South Korea
- Prior art keywords
- diffusion barrier
- nitride film
- barrier layer
- layer
- heat resistant
- Prior art date
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/014,458 US20080174021A1 (en) | 2007-01-18 | 2008-01-15 | Semiconductor devices having metal interconnections, semiconductor cluster tools used in fabrication thereof and methods of fabricating the same |
TW97101779A TW200834816A (en) | 2007-01-18 | 2008-01-17 | Semiconductor devices having metal interconnections, semiconductor cluster tools used in fabrication therof and methods of fabricating the same |
JP2008009582A JP2008177577A (ja) | 2007-01-18 | 2008-01-18 | 半導体素子及びその形成方法、半導体クラスタ装備 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070005732 | 2007-01-18 | ||
KR1020070005732 | 2007-01-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080068509A KR20080068509A (ko) | 2008-07-23 |
KR100874442B1 true KR100874442B1 (ko) | 2008-12-17 |
Family
ID=39822314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20070039874A KR100874442B1 (ko) | 2007-01-18 | 2007-04-24 | 반도체 소자 및 그 형성방법, 반도체 클러스터 장비 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100874442B1 (zh) |
CN (1) | CN101312154A (zh) |
TW (1) | TW200834816A (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101088813B1 (ko) | 2008-07-25 | 2011-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 및 그 형성방법 |
JP2010177393A (ja) * | 2009-01-29 | 2010-08-12 | Sony Corp | 半導体記憶装置およびその製造方法 |
US20130320540A1 (en) * | 2012-06-04 | 2013-12-05 | Nanya Technology Corporation | Semiconductor device and method for manufacturing the same |
CN103165483B (zh) * | 2013-02-20 | 2015-08-19 | 上海华力微电子有限公司 | 一种减少铝衬垫表面缺陷的方法 |
CN103258810B (zh) * | 2013-05-10 | 2015-07-08 | 华进半导体封装先导技术研发中心有限公司 | 一种减少硅通孔电镀铜后晶圆表面过电镀的方法 |
US10825724B2 (en) | 2014-04-25 | 2020-11-03 | Taiwan Semiconductor Manufacturing Company | Metal contact structure and method of forming the same in a semiconductor device |
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2007
- 2007-04-24 KR KR20070039874A patent/KR100874442B1/ko not_active IP Right Cessation
-
2008
- 2008-01-17 TW TW97101779A patent/TW200834816A/zh unknown
- 2008-01-18 CN CNA2008101277622A patent/CN101312154A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20080068509A (ko) | 2008-07-23 |
CN101312154A (zh) | 2008-11-26 |
TW200834816A (en) | 2008-08-16 |
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