KR100874442B1 - 반도체 소자 및 그 형성방법, 반도체 클러스터 장비 - Google Patents

반도체 소자 및 그 형성방법, 반도체 클러스터 장비 Download PDF

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Publication number
KR100874442B1
KR100874442B1 KR20070039874A KR20070039874A KR100874442B1 KR 100874442 B1 KR100874442 B1 KR 100874442B1 KR 20070039874 A KR20070039874 A KR 20070039874A KR 20070039874 A KR20070039874 A KR 20070039874A KR 100874442 B1 KR100874442 B1 KR 100874442B1
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KR
South Korea
Prior art keywords
diffusion barrier
nitride film
barrier layer
layer
heat resistant
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Application number
KR20070039874A
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English (en)
Korean (ko)
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KR20080068509A (ko
Inventor
최경인
이현배
최길현
이종명
홍종원
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삼성전자주식회사
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Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to US12/014,458 priority Critical patent/US20080174021A1/en
Priority to TW97101779A priority patent/TW200834816A/zh
Priority to JP2008009582A priority patent/JP2008177577A/ja
Publication of KR20080068509A publication Critical patent/KR20080068509A/ko
Application granted granted Critical
Publication of KR100874442B1 publication Critical patent/KR100874442B1/ko

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
KR20070039874A 2007-01-18 2007-04-24 반도체 소자 및 그 형성방법, 반도체 클러스터 장비 KR100874442B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/014,458 US20080174021A1 (en) 2007-01-18 2008-01-15 Semiconductor devices having metal interconnections, semiconductor cluster tools used in fabrication thereof and methods of fabricating the same
TW97101779A TW200834816A (en) 2007-01-18 2008-01-17 Semiconductor devices having metal interconnections, semiconductor cluster tools used in fabrication therof and methods of fabricating the same
JP2008009582A JP2008177577A (ja) 2007-01-18 2008-01-18 半導体素子及びその形成方法、半導体クラスタ装備

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20070005732 2007-01-18
KR1020070005732 2007-01-18

Publications (2)

Publication Number Publication Date
KR20080068509A KR20080068509A (ko) 2008-07-23
KR100874442B1 true KR100874442B1 (ko) 2008-12-17

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KR20070039874A KR100874442B1 (ko) 2007-01-18 2007-04-24 반도체 소자 및 그 형성방법, 반도체 클러스터 장비

Country Status (3)

Country Link
KR (1) KR100874442B1 (zh)
CN (1) CN101312154A (zh)
TW (1) TW200834816A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101088813B1 (ko) 2008-07-25 2011-12-01 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
JP2010177393A (ja) * 2009-01-29 2010-08-12 Sony Corp 半導体記憶装置およびその製造方法
US20130320540A1 (en) * 2012-06-04 2013-12-05 Nanya Technology Corporation Semiconductor device and method for manufacturing the same
CN103165483B (zh) * 2013-02-20 2015-08-19 上海华力微电子有限公司 一种减少铝衬垫表面缺陷的方法
CN103258810B (zh) * 2013-05-10 2015-07-08 华进半导体封装先导技术研发中心有限公司 一种减少硅通孔电镀铜后晶圆表面过电镀的方法
US10825724B2 (en) 2014-04-25 2020-11-03 Taiwan Semiconductor Manufacturing Company Metal contact structure and method of forming the same in a semiconductor device

Also Published As

Publication number Publication date
KR20080068509A (ko) 2008-07-23
CN101312154A (zh) 2008-11-26
TW200834816A (en) 2008-08-16

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