KR100866826B1 - ＣＭＯＳ 디바이스를 위한 변형된 Ｓｉ를 형성하는 방법 및구조 - Google Patents

ＣＭＯＳ 디바이스를 위한 변형된 Ｓｉ를 형성하는 방법 및구조 Download PDF

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KR100866826B1
KR100866826B1 KR1020067008867A KR20067008867A KR100866826B1 KR 100866826 B1 KR100866826 B1 KR 100866826B1 KR 1020067008867 A KR1020067008867 A KR 1020067008867A KR 20067008867 A KR20067008867 A KR 20067008867A KR 100866826 B1 KR100866826 B1 KR 100866826B1
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semiconductor substrate
layer
gap
type device
strained layer
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KR20060108663A (ko
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안 엘 스티겐
하이닝 에스 양
잉 장
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인터내셔널 비지네스 머신즈 코포레이션
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
KR1020067008867A 2003-11-05 2004-11-05 ＣＭＯＳ 디바이스를 위한 변형된 Ｓｉ를 형성하는 방법 및구조 Expired - Fee Related KR100866826B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/605,906 US7129126B2 (en) 2003-11-05 2003-11-05 Method and structure for forming strained Si for CMOS devices
US10/605,906 2003-11-05

Publications (2)

Publication Number Publication Date
KR20060108663A KR20060108663A (ko) 2006-10-18
KR100866826B1 true KR100866826B1 (ko) 2008-11-04

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US (5) US7129126B2 (enExample)
EP (1) EP1680804A4 (enExample)
JP (1) JP4959337B2 (enExample)
KR (1) KR100866826B1 (enExample)
CN (1) CN100555600C (enExample)
WO (1) WO2005045901A2 (enExample)

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US7029964B2 (en) * 2003-11-13 2006-04-18 International Business Machines Corporation Method of manufacturing a strained silicon on a SiGe on SOI substrate
US20050287747A1 (en) * 2004-06-29 2005-12-29 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films
US7176481B2 (en) * 2005-01-12 2007-02-13 International Business Machines Corporation In situ doped embedded sige extension and source/drain for enhanced PFET performance
US7078285B1 (en) * 2005-01-21 2006-07-18 Sony Corporation SiGe nickel barrier structure employed in a CMOS device to prevent excess diffusion of nickel used in the silicide material
US8972300B2 (en) * 2006-04-27 2015-03-03 Panasonic Corporation Content distribution system
US7781839B2 (en) * 2007-03-30 2010-08-24 Freescale Semiconductor, Inc. Structure and method for strained transistor directly on insulator
US7572689B2 (en) * 2007-11-09 2009-08-11 International Business Machines Corporation Method and structure for reducing induced mechanical stresses
US7678634B2 (en) * 2008-01-28 2010-03-16 International Business Machines Corporation Local stress engineering for CMOS devices
US8115194B2 (en) * 2008-02-21 2012-02-14 United Microelectronics Corp. Semiconductor device capable of providing identical strains to each channel region of the transistors
FR2934416B1 (fr) * 2008-07-24 2011-09-02 Inst Nat Sciences Appliq Substrat semi-conducteur contraint et procede de fabrication associe.
US8368125B2 (en) 2009-07-20 2013-02-05 International Business Machines Corporation Multiple orientation nanowires with gate stack stressors
US20110031503A1 (en) * 2009-08-10 2011-02-10 International Business Machines Corporation Device with stressed channel
US8138523B2 (en) 2009-10-08 2012-03-20 International Business Machines Corporation Semiconductor device having silicon on stressed liner (SOL)
CN102315126A (zh) * 2010-07-07 2012-01-11 中国科学院微电子研究所 半导体器件及其制作方法
US20130137235A1 (en) * 2010-07-15 2013-05-30 University Of Electronic Science And Technology Of China Mos transistor using stress concentration effect for enhancing stress in channel area
CN104425280B (zh) * 2013-09-09 2018-08-14 中芯国际集成电路制造(上海)有限公司 半导体器件结构及其形成方法
US9368626B2 (en) * 2013-12-04 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with strained layer
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
GB201415119D0 (en) * 2014-08-27 2014-10-08 Ibm Method for fabricating a semiconductor structure
US10079233B2 (en) * 2016-09-28 2018-09-18 International Business Machines Corporation Semiconductor device and method of forming the semiconductor device
DE102019122987A1 (de) 2019-08-27 2021-03-04 Zf Airbag Germany Gmbh Diffusor für einen Gasgenerator, Gasgenerator mit einem solchen Diffusor und Herstellungsverfahren für einen solchen Diffusor
US11502106B2 (en) * 2020-02-11 2022-11-15 Globalfoundries U.S. Inc. Multi-layered substrates of semiconductor devices

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US7129126B2 (en) 2006-10-31
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US7700951B2 (en) 2010-04-20
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US20080003735A1 (en) 2008-01-03
US20080283824A1 (en) 2008-11-20
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US7550338B2 (en) 2009-06-23
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