JP4959337B2 - ＣＭＯＳデバイスのための歪みＳｉを形成する方法及び構造体 - Google Patents

ＣＭＯＳデバイスのための歪みＳｉを形成する方法及び構造体 Download PDF

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JP4959337B2
JP4959337B2 JP2006538524A JP2006538524A JP4959337B2 JP 4959337 B2 JP4959337 B2 JP 4959337B2 JP 2006538524 A JP2006538524 A JP 2006538524A JP 2006538524 A JP2006538524 A JP 2006538524A JP 4959337 B2 JP4959337 B2 JP 4959337B2
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semiconductor substrate
gap
layer
channel
strained layer
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JP2007511078A5 (enExample
JP2007511078A (ja
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スティーゲン、アン、エル
ヤン、ヘイニング、エス
チャン、イン
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International Business Machines Corp
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JP2006538524A 2003-11-05 2004-11-05 ＣＭＯＳデバイスのための歪みＳｉを形成する方法及び構造体 Expired - Fee Related JP4959337B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/605,906 US7129126B2 (en) 2003-11-05 2003-11-05 Method and structure for forming strained Si for CMOS devices
US10/605,906 2003-11-05
PCT/US2004/037049 WO2005045901A2 (en) 2003-11-05 2004-11-05 METHOD AND STRUCTURE FOR FORMING STRAINED Si FOR CMOS DEVICES

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JP2007511078A JP2007511078A (ja) 2007-04-26
JP2007511078A5 JP2007511078A5 (enExample) 2007-11-15
JP4959337B2 true JP4959337B2 (ja) 2012-06-20

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US (5) US7129126B2 (enExample)
EP (1) EP1680804A4 (enExample)
JP (1) JP4959337B2 (enExample)
KR (1) KR100866826B1 (enExample)
CN (1) CN100555600C (enExample)
WO (1) WO2005045901A2 (enExample)

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US20130137235A1 (en) * 2010-07-15 2013-05-30 University Of Electronic Science And Technology Of China Mos transistor using stress concentration effect for enhancing stress in channel area
CN104425280B (zh) * 2013-09-09 2018-08-14 中芯国际集成电路制造(上海)有限公司 半导体器件结构及其形成方法
US9368626B2 (en) * 2013-12-04 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with strained layer
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
GB201415119D0 (en) * 2014-08-27 2014-10-08 Ibm Method for fabricating a semiconductor structure
US10079233B2 (en) * 2016-09-28 2018-09-18 International Business Machines Corporation Semiconductor device and method of forming the semiconductor device
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US7429752B2 (en) 2008-09-30
US7129126B2 (en) 2006-10-31
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US7700951B2 (en) 2010-04-20
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US20050093076A1 (en) 2005-05-05
KR100866826B1 (ko) 2008-11-04
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US7928443B2 (en) 2011-04-19
US20080003735A1 (en) 2008-01-03
US20080283824A1 (en) 2008-11-20
US7550338B2 (en) 2009-06-23
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