FR2934416B1 - Substrat semi-conducteur contraint et procede de fabrication associe. - Google Patents

Substrat semi-conducteur contraint et procede de fabrication associe.

Info

Publication number
FR2934416B1
FR2934416B1 FR0855095A FR0855095A FR2934416B1 FR 2934416 B1 FR2934416 B1 FR 2934416B1 FR 0855095 A FR0855095 A FR 0855095A FR 0855095 A FR0855095 A FR 0855095A FR 2934416 B1 FR2934416 B1 FR 2934416B1
Authority
FR
France
Prior art keywords
manufacturing
same
semiconductor substrate
constrained semiconductor
constrained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0855095A
Other languages
English (en)
Other versions
FR2934416A1 (fr
Inventor
Tetyana Nychyporuk
Mustapha Lemiti
Volodymyr Lysenko
Olivier Marty
Georges Bremond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INST NAT SCIENCES APPLIQ
Centre National de la Recherche Scientifique CNRS
Universite Claude Bernard Lyon 1 UCBL
Institut National des Sciences Appliquees INSA
Original Assignee
INST NAT SCIENCES APPLIQ
Centre National de la Recherche Scientifique CNRS
Universite Claude Bernard Lyon 1 UCBL
Institut National des Sciences Appliquees INSA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST NAT SCIENCES APPLIQ, Centre National de la Recherche Scientifique CNRS, Universite Claude Bernard Lyon 1 UCBL, Institut National des Sciences Appliquees INSA filed Critical INST NAT SCIENCES APPLIQ
Priority to FR0855095A priority Critical patent/FR2934416B1/fr
Priority to PCT/EP2009/059613 priority patent/WO2010010195A2/fr
Publication of FR2934416A1 publication Critical patent/FR2934416A1/fr
Application granted granted Critical
Publication of FR2934416B1 publication Critical patent/FR2934416B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0284—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System comprising porous silicon as part of the active layer(s)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR0855095A 2008-07-24 2008-07-24 Substrat semi-conducteur contraint et procede de fabrication associe. Expired - Fee Related FR2934416B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0855095A FR2934416B1 (fr) 2008-07-24 2008-07-24 Substrat semi-conducteur contraint et procede de fabrication associe.
PCT/EP2009/059613 WO2010010195A2 (fr) 2008-07-24 2009-07-24 Substrat semi-conducteur contraint et procede de fabrication associe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0855095A FR2934416B1 (fr) 2008-07-24 2008-07-24 Substrat semi-conducteur contraint et procede de fabrication associe.

Publications (2)

Publication Number Publication Date
FR2934416A1 FR2934416A1 (fr) 2010-01-29
FR2934416B1 true FR2934416B1 (fr) 2011-09-02

Family

ID=40622045

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0855095A Expired - Fee Related FR2934416B1 (fr) 2008-07-24 2008-07-24 Substrat semi-conducteur contraint et procede de fabrication associe.

Country Status (2)

Country Link
FR (1) FR2934416B1 (fr)
WO (1) WO2010010195A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2966285B1 (fr) 2010-10-14 2013-09-06 St Microelectronics Crolles 2 Procédé de formation de circuits intégrés sur substrat semi conducteur contraint

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745846A (ja) * 1993-07-28 1995-02-14 Oki Electric Ind Co Ltd 太陽電池の製造方法
US6734451B2 (en) * 1993-11-02 2004-05-11 Matsushita Electric Industrial Co., Ltd. Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
US7485799B2 (en) * 2002-05-07 2009-02-03 John Michael Guerra Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US7129126B2 (en) * 2003-11-05 2006-10-31 International Business Machines Corporation Method and structure for forming strained Si for CMOS devices
US7550755B2 (en) * 2004-10-27 2009-06-23 Philips Lumiled Lighting Co., Llc Semiconductor device with tunable energy band gap

Also Published As

Publication number Publication date
WO2010010195A2 (fr) 2010-01-28
WO2010010195A3 (fr) 2010-10-14
FR2934416A1 (fr) 2010-01-29

Similar Documents

Publication Publication Date Title
EP2276066A4 (fr) Dispositif a semi-conducteur et son procede de fabrication
EP2246895A4 (fr) Dispositif a semi-conducteurs et son procede de fabrication
EP1986217A4 (fr) Procede de fabrication d'un substrat semi-conducteur
TWI365528B (en) Semiconductor structure and method for manufacturing the same
EP2315508A4 (fr) Substrat céramique collectif, procédé de fabrication du substrat, substrat céramique et substrat de circuit céramique
EP2031647A4 (fr) Procédé de fabrication d'une tranche de silicium et tranche de silicium fabriquée selon ce procédé
EP2242090A4 (fr) Film pour semi-conducteur, procede de fabrication de dispositif a semi-conducteur et dispositif a semi-conducteur
EP2246880B8 (fr) Procédé de fabrication d'un dispositif semi-conducteur
EP2254164A4 (fr) Élément électroluminescent à semi-conducteur composé et dispositif d'éclairage l'utilisant, et procédé de fabrication d'élément électroluminescent à semi-conducteur composé
HK1117270A1 (en) Substrate and method of fabricating the same, and semiconductor device and method of fabricating the same
EP2420599A4 (fr) Substrat, substrat doté d'un film mince, dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
FR2913262B1 (fr) Plaque vitroceramique et son procede de fabrication.
EP2178343A4 (fr) Substrat translucide, procédé de fabrication du substrat translucide, élément del organique et procédé de fabrication de l'élément del organique
FR2943074B1 (fr) Substrat marquable au laser et procede de fabrication associe
FR2973159B1 (fr) Procede de fabrication d'un substrat de base
EP2244288A4 (fr) Module d'élément semi-conducteur et son procédé de fabrication
EP2259305A4 (fr) Condensateur, dispositif à semi-conducteurs comprenant celui-ci, procédé de fabrication du condensateur, et procédé de fabrication du dispositif à semi-conducteurs
EP2326155A4 (fr) Module de substrat et son procédé de fabrication
EP2139052A4 (fr) Dispositif électroluminescent semi-conducteur et procédé de fabrication de celui-ci
EP2175694A4 (fr) Procédé pour former un film mince, procédé de fabrication d'un dispositif organique électroluminescent, procédé de fabrication d'un dispositif à semi-conducteur et procédé de fabrication d'un dispositif optique
FR2912552B1 (fr) Structure multicouche et son procede de fabrication.
EP2172415A4 (fr) Structure de silicium, son procédé de fabrication, et puce de détection
EP2259343A4 (fr) Élément électroluminescent à semi-conducteur et son procédé de fabrication
EP2389693A4 (fr) Dispositif à semi-conducteurs, dispositif électroluminescent et leur procédé de fabrication
FR2950633B1 (fr) Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur.

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 9

ST Notification of lapse

Effective date: 20180330