KR100866203B1 - 하전 입자 빔 장치, ｄａ 변환 장치의 이상 검출 방법,하전 입자 빔 묘화 방법 및 마스크 - Google Patents

하전 입자 빔 장치, ｄａ 변환 장치의 이상 검출 방법,하전 입자 빔 묘화 방법 및 마스크 Download PDF

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KR100866203B1
KR100866203B1 KR1020070031394A KR20070031394A KR100866203B1 KR 100866203 B1 KR100866203 B1 KR 100866203B1 KR 1020070031394 A KR1020070031394 A KR 1020070031394A KR 20070031394 A KR20070031394 A KR 20070031394A KR 100866203 B1 KR100866203 B1 KR 100866203B1
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South Korea
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value
dac
analog
output
charged particle
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KR20070098709A (ko
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요시마사 산미야
아끼라 노마
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가부시키가이샤 뉴플레어 테크놀로지
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/10—Calibration or testing
    • H03M1/1071—Measuring or testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/02—Electrodes; Magnetic control means; Screens
    • H01J23/09—Electric systems for directing or deflecting the discharge along a desired path, e.g. E-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020070031394A 2006-03-31 2007-03-30 하전 입자 빔 장치, ｄａ 변환 장치의 이상 검출 방법,하전 입자 빔 묘화 방법 및 마스크 Active KR100866203B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006097370A JP5007063B2 (ja) 2006-03-31 2006-03-31 荷電粒子ビーム装置、ｄａ変換装置の異常検出方法、荷電粒子ビーム描画方法及びマスク
JPJP-P-2006-00097370 2006-03-31

Publications (2)

Publication Number Publication Date
KR20070098709A KR20070098709A (ko) 2007-10-05
KR100866203B1 true KR100866203B1 (ko) 2008-10-30

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KR1020070031394A Active KR100866203B1 (ko) 2006-03-31 2007-03-30 하전 입자 빔 장치, ｄａ 변환 장치의 이상 검출 방법,하전 입자 빔 묘화 방법 및 마스크

Country Status (4)

Country Link
US (1) US7463173B2 (https=)
JP (1) JP5007063B2 (https=)
KR (1) KR100866203B1 (https=)
DE (1) DE102007015232A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7508331B2 (en) * 2007-01-31 2009-03-24 Wolfson Microelectronics Plc Digital-to-analog converter with dynamic element matching to minimize mismatch error
JP5123730B2 (ja) * 2008-05-01 2013-01-23 株式会社ニューフレアテクノロジー 偏向アンプのセトリング時間検査方法及び偏向アンプの故障判定方法
JP5174531B2 (ja) * 2008-05-16 2013-04-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および荷電粒子ビーム描画装置における描画方法
JP5107812B2 (ja) * 2008-07-08 2012-12-26 株式会社日立ハイテクノロジーズ 検査装置
JP5461799B2 (ja) * 2008-07-30 2014-04-02 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および荷電粒子ビーム描画装置におけるｄａｃアンプユニットの診断方法
US7898447B2 (en) * 2009-07-16 2011-03-01 Nuflare Technology, Inc. Methods and systems for testing digital-to-analog converter/amplifier circuits
JP5881972B2 (ja) * 2011-05-12 2016-03-09 株式会社ニューフレアテクノロジー Ｄａｃアンプの評価方法及び荷電粒子ビーム描画装置
JP5819140B2 (ja) * 2011-08-30 2015-11-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及びｄａｃアンプの評価方法
JP5855390B2 (ja) * 2011-08-30 2016-02-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及びブランキングタイミングの調整方法
EP2575159B1 (en) * 2011-09-30 2016-04-20 Carl Zeiss Microscopy GmbH Particle beam system and method for operating the same
JP6087154B2 (ja) * 2013-01-18 2017-03-01 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、試料面へのビーム入射角調整方法、および荷電粒子ビーム描画方法
JP5970394B2 (ja) * 2013-02-27 2016-08-17 株式会社日立ハイテクノロジーズ 検査装置
JP6057797B2 (ja) 2013-03-21 2017-01-11 株式会社ニューフレアテクノロジー セトリング時間の取得方法
JP6349944B2 (ja) * 2014-05-13 2018-07-04 株式会社ニューフレアテクノロジー 電子ビーム描画装置及び電子ビーム描画方法
KR102247563B1 (ko) 2014-06-12 2021-05-03 삼성전자 주식회사 전자빔을 이용한 노광 방법과 그 노광 방법을 이용한 마스크 및 반도체 소자 제조방법
JP6240045B2 (ja) * 2014-08-25 2017-11-29 株式会社ニューフレアテクノロジー 異常検出方法及び電子線描画装置
JP2016096204A (ja) * 2014-11-13 2016-05-26 株式会社ニューフレアテクノロジー 出力調整方法及び電子線描画装置
KR102404639B1 (ko) 2015-02-02 2022-06-03 삼성전자주식회사 전자 빔 노광 방법 및 그를 포함하는 기판 제조 방법
CN116686063A (zh) * 2020-12-30 2023-09-01 纽富来科技股份有限公司 带电粒子束描绘装置以及带电粒子束描绘方法
US11810749B2 (en) * 2021-12-06 2023-11-07 Carl Zeiss Smt Gmbh Charged particle beam system, method of operating a charged particle beam system, method of recording a plurality of images and computer programs for executing the methods

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JPS6424351A (en) * 1987-07-20 1989-01-26 Fujitsu Ltd Self-diagonosis device of da converting output unit for electron beam device
JP2000223409A (ja) 1999-02-03 2000-08-11 Toshiba Mach Co Ltd 荷電ビーム描画方法及びその装置
JP2005129614A (ja) * 2003-10-22 2005-05-19 Jeol Ltd 荷電粒子ビーム装置。

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DE68920281T2 (de) * 1988-10-31 1995-05-11 Fujitsu Ltd Vorrichtung und Verfahren zur Lithographie mittels eines Strahls geladener Teilchen.
DE69030243T2 (de) * 1989-12-21 1997-07-24 Fujitsu Ltd Verfahren und Gerät zur Steuerung von Ladungsträgerstrahlen in einem Belichtungssystem mittels Ladungsträgerstrahlen
JPH05190432A (ja) * 1992-01-17 1993-07-30 Fujitsu Ltd 荷電粒子線露光装置
US5528048A (en) * 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method
JP3453004B2 (ja) * 1995-06-08 2003-10-06 富士通株式会社 荷電粒子ビーム露光方法及び装置
JP2002094380A (ja) * 2000-09-20 2002-03-29 Matsushita Electric Ind Co Ltd Ｄａ変換装置
JP2004259812A (ja) 2003-02-25 2004-09-16 Hitachi High-Technologies Corp 電子線描画装置および電子線描画装置のセトリングタイム測定方法
US7209055B1 (en) * 2005-10-03 2007-04-24 Applied Materials, Inc. Electrostatic particle beam deflector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424351A (en) * 1987-07-20 1989-01-26 Fujitsu Ltd Self-diagonosis device of da converting output unit for electron beam device
JP2000223409A (ja) 1999-02-03 2000-08-11 Toshiba Mach Co Ltd 荷電ビーム描画方法及びその装置
JP2005129614A (ja) * 2003-10-22 2005-05-19 Jeol Ltd 荷電粒子ビーム装置。

Also Published As

Publication number Publication date
DE102007015232A1 (de) 2007-10-18
JP2007271919A (ja) 2007-10-18
US20070229337A1 (en) 2007-10-04
US7463173B2 (en) 2008-12-09
JP5007063B2 (ja) 2012-08-22
KR20070098709A (ko) 2007-10-05

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