DE102007015232A1 - Ladungspartikelstrahlenvorrichtung, Anomalieerfassungsverfahren für eine DA-Wandlereinheit, Ladungspartikelstrahlenschreibverfahren und Maske - Google Patents
Ladungspartikelstrahlenvorrichtung, Anomalieerfassungsverfahren für eine DA-Wandlereinheit, Ladungspartikelstrahlenschreibverfahren und Maske Download PDFInfo
- Publication number
- DE102007015232A1 DE102007015232A1 DE102007015232A DE102007015232A DE102007015232A1 DE 102007015232 A1 DE102007015232 A1 DE 102007015232A1 DE 102007015232 A DE102007015232 A DE 102007015232A DE 102007015232 A DE102007015232 A DE 102007015232A DE 102007015232 A1 DE102007015232 A1 DE 102007015232A1
- Authority
- DE
- Germany
- Prior art keywords
- daw
- output
- value
- analog
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/10—Calibration or testing
- H03M1/1071—Measuring or testing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/09—Electric systems for directing or deflecting the discharge along a desired path, e.g. E-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
- H10P76/2042—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006097370A JP5007063B2 (ja) | 2006-03-31 | 2006-03-31 | 荷電粒子ビーム装置、da変換装置の異常検出方法、荷電粒子ビーム描画方法及びマスク |
| JP2006-097370 | 2006-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102007015232A1 true DE102007015232A1 (de) | 2007-10-18 |
Family
ID=38514835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102007015232A Ceased DE102007015232A1 (de) | 2006-03-31 | 2007-03-29 | Ladungspartikelstrahlenvorrichtung, Anomalieerfassungsverfahren für eine DA-Wandlereinheit, Ladungspartikelstrahlenschreibverfahren und Maske |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7463173B2 (https=) |
| JP (1) | JP5007063B2 (https=) |
| KR (1) | KR100866203B1 (https=) |
| DE (1) | DE102007015232A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7508331B2 (en) * | 2007-01-31 | 2009-03-24 | Wolfson Microelectronics Plc | Digital-to-analog converter with dynamic element matching to minimize mismatch error |
| JP5123730B2 (ja) * | 2008-05-01 | 2013-01-23 | 株式会社ニューフレアテクノロジー | 偏向アンプのセトリング時間検査方法及び偏向アンプの故障判定方法 |
| JP5174531B2 (ja) * | 2008-05-16 | 2013-04-03 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および荷電粒子ビーム描画装置における描画方法 |
| JP5107812B2 (ja) * | 2008-07-08 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | 検査装置 |
| JP5461799B2 (ja) * | 2008-07-30 | 2014-04-02 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および荷電粒子ビーム描画装置におけるdacアンプユニットの診断方法 |
| US7898447B2 (en) * | 2009-07-16 | 2011-03-01 | Nuflare Technology, Inc. | Methods and systems for testing digital-to-analog converter/amplifier circuits |
| JP5881972B2 (ja) * | 2011-05-12 | 2016-03-09 | 株式会社ニューフレアテクノロジー | Dacアンプの評価方法及び荷電粒子ビーム描画装置 |
| JP5819140B2 (ja) * | 2011-08-30 | 2015-11-18 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及びdacアンプの評価方法 |
| JP5855390B2 (ja) * | 2011-08-30 | 2016-02-09 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及びブランキングタイミングの調整方法 |
| EP2575159B1 (en) * | 2011-09-30 | 2016-04-20 | Carl Zeiss Microscopy GmbH | Particle beam system and method for operating the same |
| JP6087154B2 (ja) * | 2013-01-18 | 2017-03-01 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、試料面へのビーム入射角調整方法、および荷電粒子ビーム描画方法 |
| JP5970394B2 (ja) * | 2013-02-27 | 2016-08-17 | 株式会社日立ハイテクノロジーズ | 検査装置 |
| JP6057797B2 (ja) | 2013-03-21 | 2017-01-11 | 株式会社ニューフレアテクノロジー | セトリング時間の取得方法 |
| JP6349944B2 (ja) * | 2014-05-13 | 2018-07-04 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置及び電子ビーム描画方法 |
| KR102247563B1 (ko) | 2014-06-12 | 2021-05-03 | 삼성전자 주식회사 | 전자빔을 이용한 노광 방법과 그 노광 방법을 이용한 마스크 및 반도체 소자 제조방법 |
| JP6240045B2 (ja) * | 2014-08-25 | 2017-11-29 | 株式会社ニューフレアテクノロジー | 異常検出方法及び電子線描画装置 |
| JP2016096204A (ja) * | 2014-11-13 | 2016-05-26 | 株式会社ニューフレアテクノロジー | 出力調整方法及び電子線描画装置 |
| KR102404639B1 (ko) | 2015-02-02 | 2022-06-03 | 삼성전자주식회사 | 전자 빔 노광 방법 및 그를 포함하는 기판 제조 방법 |
| CN116686063A (zh) * | 2020-12-30 | 2023-09-01 | 纽富来科技股份有限公司 | 带电粒子束描绘装置以及带电粒子束描绘方法 |
| US11810749B2 (en) * | 2021-12-06 | 2023-11-07 | Carl Zeiss Smt Gmbh | Charged particle beam system, method of operating a charged particle beam system, method of recording a plurality of images and computer programs for executing the methods |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6424351A (en) * | 1987-07-20 | 1989-01-26 | Fujitsu Ltd | Self-diagonosis device of da converting output unit for electron beam device |
| DE68920281T2 (de) * | 1988-10-31 | 1995-05-11 | Fujitsu Ltd | Vorrichtung und Verfahren zur Lithographie mittels eines Strahls geladener Teilchen. |
| DE69030243T2 (de) * | 1989-12-21 | 1997-07-24 | Fujitsu Ltd | Verfahren und Gerät zur Steuerung von Ladungsträgerstrahlen in einem Belichtungssystem mittels Ladungsträgerstrahlen |
| JPH05190432A (ja) * | 1992-01-17 | 1993-07-30 | Fujitsu Ltd | 荷電粒子線露光装置 |
| US5528048A (en) * | 1994-03-15 | 1996-06-18 | Fujitsu Limited | Charged particle beam exposure system and method |
| JP3453004B2 (ja) * | 1995-06-08 | 2003-10-06 | 富士通株式会社 | 荷電粒子ビーム露光方法及び装置 |
| JP3584962B2 (ja) | 1999-02-03 | 2004-11-04 | 東芝機械株式会社 | 荷電ビーム描画方法及びその装置 |
| JP2002094380A (ja) * | 2000-09-20 | 2002-03-29 | Matsushita Electric Ind Co Ltd | Da変換装置 |
| JP2004259812A (ja) | 2003-02-25 | 2004-09-16 | Hitachi High-Technologies Corp | 電子線描画装置および電子線描画装置のセトリングタイム測定方法 |
| JP2005129614A (ja) * | 2003-10-22 | 2005-05-19 | Jeol Ltd | 荷電粒子ビーム装置。 |
| US7209055B1 (en) * | 2005-10-03 | 2007-04-24 | Applied Materials, Inc. | Electrostatic particle beam deflector |
-
2006
- 2006-03-31 JP JP2006097370A patent/JP5007063B2/ja not_active Expired - Lifetime
-
2007
- 2007-03-28 US US11/692,409 patent/US7463173B2/en active Active
- 2007-03-29 DE DE102007015232A patent/DE102007015232A1/de not_active Ceased
- 2007-03-30 KR KR1020070031394A patent/KR100866203B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007271919A (ja) | 2007-10-18 |
| US20070229337A1 (en) | 2007-10-04 |
| US7463173B2 (en) | 2008-12-09 |
| JP5007063B2 (ja) | 2012-08-22 |
| KR100866203B1 (ko) | 2008-10-30 |
| KR20070098709A (ko) | 2007-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8131 | Rejection |