KR100861388B1 - 노광 장치 및 그 제어 방법, 및 디바이스 제조 방법 - Google Patents

노광 장치 및 그 제어 방법, 및 디바이스 제조 방법 Download PDF

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Publication number
KR100861388B1
KR100861388B1 KR1020070019990A KR20070019990A KR100861388B1 KR 100861388 B1 KR100861388 B1 KR 100861388B1 KR 1020070019990 A KR1020070019990 A KR 1020070019990A KR 20070019990 A KR20070019990 A KR 20070019990A KR 100861388 B1 KR100861388 B1 KR 100861388B1
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KR
South Korea
Prior art keywords
capping layer
optical element
exposure apparatus
container
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070019990A
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English (en)
Korean (ko)
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KR20070089633A (ko
Inventor
마사유키 타나베
유타카 와타나베
시게루 테라시마
미카 카네히라
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20070089633A publication Critical patent/KR20070089633A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020070019990A 2006-02-28 2007-02-28 노광 장치 및 그 제어 방법, 및 디바이스 제조 방법 Expired - Fee Related KR100861388B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006053804A JP2007234822A (ja) 2006-02-28 2006-02-28 露光装置及びその制御方法並びにデバイス製造方法
JPJP-P-2006-00053804 2006-02-28

Publications (2)

Publication Number Publication Date
KR20070089633A KR20070089633A (ko) 2007-08-31
KR100861388B1 true KR100861388B1 (ko) 2008-10-02

Family

ID=38444405

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070019990A Expired - Fee Related KR100861388B1 (ko) 2006-02-28 2007-02-28 노광 장치 및 그 제어 방법, 및 디바이스 제조 방법

Country Status (4)

Country Link
US (1) US8004657B2 (enExample)
JP (1) JP2007234822A (enExample)
KR (1) KR100861388B1 (enExample)
TW (1) TW200745725A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234822A (ja) 2006-02-28 2007-09-13 Canon Inc 露光装置及びその制御方法並びにデバイス製造方法
NL2008426A (en) * 2011-04-08 2012-10-09 Asml Netherlands Bv Lithographic apparatus, programmable patterning device and lithographic method.
US10359710B2 (en) 2015-11-11 2019-07-23 Asml Netherlands B.V. Radiation system and optical device
DE102016224200A1 (de) * 2016-12-06 2018-06-07 Carl Zeiss Smt Gmbh Verfahren zum Reparieren von reflektiven optischen Elementen für die EUV-Lithographie

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001059901A (ja) * 1999-07-02 2001-03-06 Asm Lithography Bv 極端紫外光学素子用のキャッピング層
KR20020021095A (ko) * 1999-05-26 2002-03-18 추후보정 몰리브덴루테늄/베릴륨 다중층
KR20070054019A (ko) * 2005-11-22 2007-05-28 삼성전자주식회사 원자힘 현미경 리소그래피 기술을 이용한 극자외선 마스크수정 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
US5835560A (en) 1994-05-24 1998-11-10 Canon Kabushiki Kaisha Exposure apparatus
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination
JP4560182B2 (ja) 2000-07-06 2010-10-13 キヤノン株式会社 減圧処理装置、半導体製造装置およびデバイス製造方法
TW548524B (en) * 2000-09-04 2003-08-21 Asm Lithography Bv Lithographic projection apparatus, device manufacturing method and device manufactured thereby
US6954255B2 (en) 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
JP2003022950A (ja) 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
JP2003115451A (ja) 2001-07-30 2003-04-18 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
US20050109278A1 (en) * 2003-11-26 2005-05-26 Ted Liang Method to locally protect extreme ultraviolet multilayer blanks used for lithography
US7561247B2 (en) * 2005-08-22 2009-07-14 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
JP2007067344A (ja) 2005-09-02 2007-03-15 Canon Inc 露光装置および方法ならびにデバイス製造方法
JP2007234822A (ja) 2006-02-28 2007-09-13 Canon Inc 露光装置及びその制御方法並びにデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020021095A (ko) * 1999-05-26 2002-03-18 추후보정 몰리브덴루테늄/베릴륨 다중층
JP2001059901A (ja) * 1999-07-02 2001-03-06 Asm Lithography Bv 極端紫外光学素子用のキャッピング層
KR20070054019A (ko) * 2005-11-22 2007-05-28 삼성전자주식회사 원자힘 현미경 리소그래피 기술을 이용한 극자외선 마스크수정 방법

Also Published As

Publication number Publication date
US8004657B2 (en) 2011-08-23
TW200745725A (en) 2007-12-16
US20070202423A1 (en) 2007-08-30
KR20070089633A (ko) 2007-08-31
JP2007234822A (ja) 2007-09-13

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