TW200745725A - Exposure apparatus, control method for the same, and device manufacturing method - Google Patents

Exposure apparatus, control method for the same, and device manufacturing method

Info

Publication number
TW200745725A
TW200745725A TW096106877A TW96106877A TW200745725A TW 200745725 A TW200745725 A TW 200745725A TW 096106877 A TW096106877 A TW 096106877A TW 96106877 A TW96106877 A TW 96106877A TW 200745725 A TW200745725 A TW 200745725A
Authority
TW
Taiwan
Prior art keywords
exposure apparatus
same
capping layer
device manufacturing
optical element
Prior art date
Application number
TW096106877A
Other languages
English (en)
Chinese (zh)
Inventor
Masayuki Tanabe
Yutaka Watanabe
Shigeru Terashima
Mika Kanehira
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200745725A publication Critical patent/TW200745725A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Chemical Vapour Deposition (AREA)
TW096106877A 2006-02-28 2007-02-27 Exposure apparatus, control method for the same, and device manufacturing method TW200745725A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006053804A JP2007234822A (ja) 2006-02-28 2006-02-28 露光装置及びその制御方法並びにデバイス製造方法

Publications (1)

Publication Number Publication Date
TW200745725A true TW200745725A (en) 2007-12-16

Family

ID=38444405

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106877A TW200745725A (en) 2006-02-28 2007-02-27 Exposure apparatus, control method for the same, and device manufacturing method

Country Status (4)

Country Link
US (1) US8004657B2 (enExample)
JP (1) JP2007234822A (enExample)
KR (1) KR100861388B1 (enExample)
TW (1) TW200745725A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234822A (ja) 2006-02-28 2007-09-13 Canon Inc 露光装置及びその制御方法並びにデバイス製造方法
WO2012136434A2 (en) * 2011-04-08 2012-10-11 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
NL2017671A (en) * 2015-11-11 2017-05-26 Asml Netherlands Bv A radiation system and optical device
DE102016224200A1 (de) * 2016-12-06 2018-06-07 Carl Zeiss Smt Gmbh Verfahren zum Reparieren von reflektiven optischen Elementen für die EUV-Lithographie

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
US5835560A (en) 1994-05-24 1998-11-10 Canon Kabushiki Kaisha Exposure apparatus
US6228512B1 (en) * 1999-05-26 2001-05-08 The Regents Of The University Of California MoRu/Be multilayers for extreme ultraviolet applications
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination
TW561279B (en) * 1999-07-02 2003-11-11 Asml Netherlands Bv Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation
JP4560182B2 (ja) 2000-07-06 2010-10-13 キヤノン株式会社 減圧処理装置、半導体製造装置およびデバイス製造方法
TW548524B (en) * 2000-09-04 2003-08-21 Asm Lithography Bv Lithographic projection apparatus, device manufacturing method and device manufactured thereby
US6954255B2 (en) 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
JP2003022950A (ja) 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
JP2003115451A (ja) 2001-07-30 2003-04-18 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
US20050109278A1 (en) * 2003-11-26 2005-05-26 Ted Liang Method to locally protect extreme ultraviolet multilayer blanks used for lithography
US7561247B2 (en) * 2005-08-22 2009-07-14 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
JP2007067344A (ja) 2005-09-02 2007-03-15 Canon Inc 露光装置および方法ならびにデバイス製造方法
KR20070054019A (ko) * 2005-11-22 2007-05-28 삼성전자주식회사 원자힘 현미경 리소그래피 기술을 이용한 극자외선 마스크수정 방법
JP2007234822A (ja) 2006-02-28 2007-09-13 Canon Inc 露光装置及びその制御方法並びにデバイス製造方法

Also Published As

Publication number Publication date
US8004657B2 (en) 2011-08-23
KR100861388B1 (ko) 2008-10-02
KR20070089633A (ko) 2007-08-31
JP2007234822A (ja) 2007-09-13
US20070202423A1 (en) 2007-08-30

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