JP2007234822A - 露光装置及びその制御方法並びにデバイス製造方法 - Google Patents

露光装置及びその制御方法並びにデバイス製造方法 Download PDF

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Publication number
JP2007234822A
JP2007234822A JP2006053804A JP2006053804A JP2007234822A JP 2007234822 A JP2007234822 A JP 2007234822A JP 2006053804 A JP2006053804 A JP 2006053804A JP 2006053804 A JP2006053804 A JP 2006053804A JP 2007234822 A JP2007234822 A JP 2007234822A
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JP
Japan
Prior art keywords
capping layer
optical element
exposure apparatus
exposure
repairing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006053804A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007234822A5 (enExample
Inventor
Masayuki Tanabe
正幸 田邉
Yutaka Watanabe
豊 渡辺
Shigeru Terajima
茂 寺島
Mika Kanehira
美香 兼平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006053804A priority Critical patent/JP2007234822A/ja
Priority to US11/677,241 priority patent/US8004657B2/en
Priority to TW096106877A priority patent/TW200745725A/zh
Priority to KR1020070019990A priority patent/KR100861388B1/ko
Publication of JP2007234822A publication Critical patent/JP2007234822A/ja
Publication of JP2007234822A5 publication Critical patent/JP2007234822A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006053804A 2006-02-28 2006-02-28 露光装置及びその制御方法並びにデバイス製造方法 Withdrawn JP2007234822A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006053804A JP2007234822A (ja) 2006-02-28 2006-02-28 露光装置及びその制御方法並びにデバイス製造方法
US11/677,241 US8004657B2 (en) 2006-02-28 2007-02-21 Exposure apparatus, control method for the same, and device manufacturing method
TW096106877A TW200745725A (en) 2006-02-28 2007-02-27 Exposure apparatus, control method for the same, and device manufacturing method
KR1020070019990A KR100861388B1 (ko) 2006-02-28 2007-02-28 노광 장치 및 그 제어 방법, 및 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006053804A JP2007234822A (ja) 2006-02-28 2006-02-28 露光装置及びその制御方法並びにデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2007234822A true JP2007234822A (ja) 2007-09-13
JP2007234822A5 JP2007234822A5 (enExample) 2009-03-26

Family

ID=38444405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006053804A Withdrawn JP2007234822A (ja) 2006-02-28 2006-02-28 露光装置及びその制御方法並びにデバイス製造方法

Country Status (4)

Country Link
US (1) US8004657B2 (enExample)
JP (1) JP2007234822A (enExample)
KR (1) KR100861388B1 (enExample)
TW (1) TW200745725A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014510419A (ja) * 2011-04-08 2014-04-24 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、プログラマブル・パターニングデバイス、及びリソグラフィ方法
JP2018536890A (ja) * 2015-11-11 2018-12-13 エーエスエムエル ネザーランズ ビー．ブイ． 放射システムおよび光デバイス

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234822A (ja) 2006-02-28 2007-09-13 Canon Inc 露光装置及びその制御方法並びにデバイス製造方法
DE102016224200A1 (de) * 2016-12-06 2018-06-07 Carl Zeiss Smt Gmbh Verfahren zum Reparieren von reflektiven optischen Elementen für die EUV-Lithographie

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
US5835560A (en) 1994-05-24 1998-11-10 Canon Kabushiki Kaisha Exposure apparatus
US6228512B1 (en) * 1999-05-26 2001-05-08 The Regents Of The University Of California MoRu/Be multilayers for extreme ultraviolet applications
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination
TW561279B (en) 1999-07-02 2003-11-11 Asml Netherlands Bv Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation
JP4560182B2 (ja) 2000-07-06 2010-10-13 キヤノン株式会社 減圧処理装置、半導体製造装置およびデバイス製造方法
TW548524B (en) * 2000-09-04 2003-08-21 Asm Lithography Bv Lithographic projection apparatus, device manufacturing method and device manufactured thereby
US6954255B2 (en) 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
JP2003022950A (ja) 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
JP2003115451A (ja) 2001-07-30 2003-04-18 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
US20050109278A1 (en) * 2003-11-26 2005-05-26 Ted Liang Method to locally protect extreme ultraviolet multilayer blanks used for lithography
US7561247B2 (en) * 2005-08-22 2009-07-14 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
JP2007067344A (ja) 2005-09-02 2007-03-15 Canon Inc 露光装置および方法ならびにデバイス製造方法
KR20070054019A (ko) * 2005-11-22 2007-05-28 삼성전자주식회사 원자힘 현미경 리소그래피 기술을 이용한 극자외선 마스크수정 방법
JP2007234822A (ja) 2006-02-28 2007-09-13 Canon Inc 露光装置及びその制御方法並びにデバイス製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014510419A (ja) * 2011-04-08 2014-04-24 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、プログラマブル・パターニングデバイス、及びリソグラフィ方法
US9645502B2 (en) 2011-04-08 2017-05-09 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
JP2018536890A (ja) * 2015-11-11 2018-12-13 エーエスエムエル ネザーランズ ビー．ブイ． 放射システムおよび光デバイス

Also Published As

Publication number Publication date
KR20070089633A (ko) 2007-08-31
US8004657B2 (en) 2011-08-23
US20070202423A1 (en) 2007-08-30
TW200745725A (en) 2007-12-16
KR100861388B1 (ko) 2008-10-02

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